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Applied Physics Letters / Volume 96 / Issue 22 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 96, 221110 (2010); http://dx.doi.org/10.1063/1.3446834 (3 pages)

Surface 210 nm light emission from an AlN p–n junction light-emitting diode enhanced by A-plane growth orientation

Yoshitaka Taniyasu and Makoto Kasu

NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato-Wakamiya, Atsugi 243-0198, Japan

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(Received 28 January 2010; accepted 14 May 2010; published online 4 June 2010)

(11math0) A-plane AlN p–n junction light-emitting diode (LED) with a wavelength of 210 nm is demonstrated. The electroluminescence from the A-plane LED is inherently polarized for the electric field parallel to the [0001] c-axis due to a negative crystal-field splitting energy. The polarization ratio (electric-field component ratio of parallel and perpendicular to c-axis) is as high as 0.9. The radiation pattern of the A-plane LED shows higher emission intensity along the surface normal, while that of a conventional (0001) C-plane LED shows lower emission intensity along the surface normal. The different radiation patterns can be explained by the polarization property.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium compounds, electroluminescence, light emitting diodes, light polarisation

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3446834

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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