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Applied Physics Letters / Volume 96 / Issue 22 / STRUCTURAL, MECHANICAL, THERMODYNAMIC, AND OPTICAL PROPERTIES OF CONDENSED MATTER

Appl. Phys. Lett. 96, 221903 (2010); http://dx.doi.org/10.1063/1.3442511 (3 pages)

Synthesis and characterization of CsSnI3 thin films

Kai Shum1, Zhuo Chen1, Jawad Qureshi1, Chonglong Yu1, Jian J. Wang2, William Pfenninger2, Nemanja Vockic2, John Midgley2, and John T. Kenney2

1Department of Physics, Brooklyn College of CUNY, Brooklyn, New York 11020, USA
2OmniPV Inc., 1030 Hamilton Ct., Menlo Park, California 94025, USA

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(Received 20 February 2010; accepted 11 May 2010; published online 2 June 2010)

We report on the synthesis and characterization of CsSnI3 perovskite semiconductor thin films deposited on inexpensive substrates such as glass and ceramics. These films contained polycrystalline domains with typical size of 300 nm. It is confirmed experimentally that CsSnI3 compound in its black phase is a direct band-gap semiconductor, consistent with the calculated band structure from the first principles. The band gap is determined to be ∼ 1.3 eV at Γ point at room temperature.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

ab initio calculations, band structure, caesium compounds, semiconductor thin films, tin compounds, wide band gap semiconductors

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3442511

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    I. Borriello, G. Gantel, and D. Ninno, Phys. Rev. B 77, 235214 (2008).


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