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Applied Physics Letters / Volume 96 / Issue 22 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 96, 222101 (2010); http://dx.doi.org/10.1063/1.3429586 (3 pages)

Permanent optical doping of amorphous metal oxide semiconductors by deep ultraviolet irradiation at room temperature

Hyungtak Seo1, Young-Je Cho2, Jinwoo Kim3, Santosh M.bobade2, Kyoung-Youn Park2, Jaegab Lee4, and Duck-Kyun Choi2

1Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
2Division of Materials Science and Engineering, Hanyang University, Seoul 133-791, Republic of Korea
3Department of Materials Sciences and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA
4School of Advanced Materials Engineering, Kookmin University, Seoul 136-702, Republic of Korea

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(Received 19 February 2010; accepted 19 April 2010; published online 1 June 2010)

We report an investigation of two photon ultraviolet (UV) irradiation induced permanent n-type doping of amorphous InGaZnO (a-IGZO) at room temperature. The photoinduced excess electrons were donated to change the Fermi-level to a conduction band edge under the UV irradiation, owing to the hole scavenging process at the oxide interface. The use of optically n-doped a-IGZO channel increased the carrier density to ∼ 1018 cm−3 from the background level of 1016 cm−3, as well as the comprehensive enhancement upon UV irradiation of a-IGZO thin film transistor parameters, such as an on-off current ratio at ∼ 108 and field-effect mobility at 22.7 cm2/V s.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

amorphous semiconductors, carrier density, carrier mobility, conduction bands, Fermi level, gallium compounds, II-VI semiconductors, indium compounds, semiconductor doping, semiconductor thin films, thin film transistors, two-photon processes, ultraviolet radiation effects, wide band gap semiconductors

PACS

  • 61.82.Fk

    Semiconductors

  • 71.23.Cq

    Amorphous semiconductors, metallic glasses, glasses

  • 73.61.Jc

    Amorphous semiconductors; glasses

  • 73.61.Ga

    II-VI semiconductors

  • 73.50.Dn

    Low-field transport and mobility; piezoresistance

  • 61.80.Ba

    Ultraviolet, visible, and infrared radiation effects (including laser radiation)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3429586

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    D. C. Look, G. C. Farlow, P. Reunchan, S. Limpijumnongm, S. B. Zhang, and K. Nordlund, Phys. Rev. Lett. 95, 225502 (2005).

    S. Na-Phattalung, Phys. Rev. B 73, 125205 (2006).

    Q. H. Li, Q. Wan, Y. X. Liang, and T. H. Wang, Appl. Phys. Lett. 84, 4556 (2004)APPLAB000084000022004556000001.

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    K. Nomura, T. Kamiya, H. Ohta, K. Ueda, M. Hirano, and H. Hosono, Appl. Phys. Lett. 85, 1993 (2004)APPLAB000085000011001993000001.


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