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Applied Physics Letters / Volume 96 / Issue 22 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 96, 222102 (2010); http://dx.doi.org/10.1063/1.3443637 (3 pages)

Theory of electroluminescence intensity and insights into recombination in thin film solar cells

Gregory Brown1, Vladimir Faifer1, Ben Cardozo1, Eugene Bykov1, and Miguel Contreras2

1Nanosolar, Inc., San Jose, California 95138, USA
2National Renewable Energy Laboratory, Golden, Colorado 80401, USA

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(Received 24 February 2010; accepted 11 May 2010; published online 1 June 2010)

Equations describing the electroluminescence (EL) intensity as a function of material properties are derived for thin film solar cells and experimentally validated using Cu(In,Ga)Se2 solar cells. EL intensity at constant voltage is controlled by the electronic properties of the neutral bulk even when the diode current is controlled by recombination in the space charge region. Using a combination of techniques, it is found that recombination in the quasineutral bulk does not correlate with recombination in the space charge region. Differences between EL measurements on thin film cells and crystalline silicon cells are discussed including the effects of secondary barriers.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

copper compounds, electroluminescence, gallium compounds, indium compounds, semiconductor devices, solar cells, ternary semiconductors, thin film devices

PACS

  • 88.40.jn

    Thin film Cu-based I-III-VI2 solar cells

  • 85.30.De

    Semiconductor-device characterization, design, and modeling

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3443637

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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    U. Rau, Phys. Rev. B 76, 085303 (2007).

    T. Fuyuki, H. Kondo, Y. Kaji, A. Ogane, and Y. Takahashi, J. Appl. Phys. 101, 023711 (2007)JAPIAU000101000002023711000001.

    G. Brown, V. Faifer, A. Pudov, S. Anikeev, E. Bykov, M. Contreras, and J. Wu, Appl. Phys. Lett. 96, 022104 (2010)APPLAB000096000002022104000001.

    M. A. Mayer, L. B. Ruppalt, D. Hebert, J. Lyding, and A. Rockett, J. Appl. Phys. 107, 034906 (2010)JAPIAU000107000003034906000001.


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