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Applied Physics Letters / Volume 96 / Issue 22 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 96, 222103 (2010); http://dx.doi.org/10.1063/1.3442903 (3 pages)

Morphology characterization of argon-mediated epitaxial graphene on C-face SiC

J. L. Tedesco1, G. G. Jernigan2, J. C. Culbertson2, J. K. Hite1, Y. Yang1, K. M. Daniels1, R. L. Myers-Ward1, C. R. Eddy1, J. A. Robinson3, K. A. Trumbull3, M. T. Wetherington3, P. M. Campbell2, and D. K. Gaskill1

1Advanced Silicon Carbide Epitaxial Research Laboratory, U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375, USA
2U.S. Naval Research Laboratory, 4555 Overlook Avenue SW, Washington, DC 20375, USA
3Electro-Optics Center, The Pennsylvania State University, 559A Freeport Road, Freeport, Pennsylvania 16229, USA

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(Received 25 March 2010; accepted 3 May 2010; published online 1 June 2010)

Epitaxial graphene layers were grown on the C-face of 4H–SiC and 6H–SiC using an argon-mediated growth process. Variations in growth temperature and pressure were found to dramatically affect the morphological properties of the layers. The presence of argon during growth slowed the rate of graphene formation on the C-face and led to the observation of islanding. The similarity in the morphology of the islands and continuous films indicated that island nucleation and coalescence is the growth mechanism for C-face graphene.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

chemical vapour deposition, epitaxial layers, graphene, island structure, nucleation

PACS

  • 81.05.ue

    Graphene

  • 68.55.-a

    Thin film structure and morphology

  • 68.55.J-

    Morphology of films

  • 81.15.Gh

    Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)

  • 68.55.A-

    Nucleation and growth

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3442903

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    X. Wu, X. Li, Z. Song, C. Berger, and W. A. de Heer, Phys. Rev. Lett. 98, 136801 (2007).

    M. Orlita, C. Faugeras, P. Plochaka, P. Neugebauer, G. Martinez, D. K. Maude, A. -L. Barra, M. Sprinkle, C. Berger, W. A. de Heer, and M. Potemski, Phys. Rev. Lett. 101, 267601 (2008).

    J. L. Tedesco, B. L. VanMil, R. L. Myers-Ward, J. M. McCrate, S. A. Kitt, P. M. Campbell, G. G. Jernigan, J. C. Culbertson, C. R. Eddy, Jr., and D. K. Gaskill, Appl. Phys. Lett. 95, 122102 (2009)APPLAB000095000012122102000001.

    C. Virojanadara, M. Syväjarvi, R. Yakimova, L. I. Johansson, A. A. Zakharov, and T. Balasubramanian, Phys. Rev. B 78, 245403 (2008).

    N. Camara, G. Ruis, J. -R. Huntzinger, A. Tiberj, L. Magaud, N. Mestres, P. Godignon, and J. Camassel, Appl. Phys. Lett. 93, 263102 (2008)APPLAB000093000026263102000001.

    L. B. Biedermann, M. L. Bolen, M. A. Capano, D. Zemlyanov, and R. G. Reifenberger, Phys. Rev. B 79, 125411 (2009).

    J. J. Wang, M. Y. Zhu, R. A. Outlaw, X. Zhao, D. M. Manos, B. C. Holloway, and V. P. Mammana, Appl. Phys. Lett. 85, 1265 (2004)APPLAB000085000007001265000001.

    L. G. Cançado, K. Takai, T. Enoki, M. Endo, Y. A. Kim, H. Mizusaki, A. Jorio, L. N. Coelho, R. Magalhaes-Paniago, and M. A. Pimenta, Appl. Phys. Lett. 88, 163106 (2006)APPLAB000088000016163106000001.


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