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Applied Physics Letters / Volume 96 / Issue 22 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 96, 222104 (2010); http://dx.doi.org/10.1063/1.3442909 (3 pages)

Enhanced conductivity of tunnel junctions employing semimetallic nanoparticles through variation in growth temperature and deposition

Hari P. Nair, Adam M. Crook, and Seth R. Bank

Microelectronics Research Center, University of Texas at Austin, 10100 Burnet Rd., Austin, Texas 78758, USA

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(Received 29 March 2010; accepted 4 May 2010; published online 1 June 2010)

We report ErAs nanoparticle-enhanced tunnel junctions grown on GaAs with low specific resistances (<2×10−4 Ω cm−2), approximately tenfold lower than previous reports. A reduction in specific resistance was achieved by modifying the ErAs nanoparticle morphology through the molecular beam epitaxial growth conditions, particularly lower growth temperatures. A further investigation of the variation in tunnel junction resistance with the amount of ErAs deposited and growth temperature shows that nanoparticle surface coverage may not be the only factor determining tunnel junction resistance.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

arsenic alloys, electrical conductivity, erbium alloys, molecular beam epitaxial growth, nanoparticles, semimetallic thin films, surface morphology

PACS

  • 61.46.Df

    Structure of nanocrystals and nanoparticles ("colloidal" quantum dots but not gate-isolated embedded quantum dots)

  • 68.55.A-

    Nucleation and growth

  • 73.61.At

    Metal and metallic alloys

  • 68.35.B-

    Structure of clean surfaces (and surface reconstruction)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3442909

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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