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Applied Physics Letters / Volume 96 / Issue 22 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 96, 222105 (2010); http://dx.doi.org/10.1063/1.3442497 (3 pages)

Self-confined GaN heterophased quantum wells

Ikai Lo, Yu-Chi Hsu, Chia-Ho Hsieh, Wen-Yuan Pang, Mitch M. C. Chou, Yen-Liang Chen, Cheng-Hung Shih, and Ying-Chieh Wang

Department of Physics, Department of Materials and Optoelectronic Science, Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 80424, Taiwan

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(Received 2 December 2009; accepted 5 May 2010; published online 2 June 2010)

Wurtzite/zinc-blende/wurtzite GaN heterophased quantum wells (QWs) were grown by plasma-assisted molecular beam epitaxy. A self-assembling mechanism was used to simulate the heterophased QW, in which a wurtzite/zinc-blende phase transition was created by rotating the threefold symmetric N-Ga vertical bond 60°. The GaN heterophased QW was attested by transmission electron microscopy, selective area electron diffraction and cathodoluminescence measurements.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

cathodoluminescence, electron diffraction, gallium compounds, III-V semiconductors, molecular beam epitaxial growth, plasma materials processing, self-assembly, semiconductor epitaxial layers, semiconductor growth, semiconductor heterojunctions, semiconductor quantum wells, transmission electron microscopy, wide band gap semiconductors

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3442497

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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