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Applied Physics Letters / Volume 96 / Issue 22 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 96, 222107 (2010); http://dx.doi.org/10.1063/1.3442508 (3 pages)

Quantum confinement effects in Si/Ge heterostructures with spatially ordered arrays of self-assembled quantum dots

Oleksiy B. Agafonov1, Christian Dais2, Detlev Grützmacher3, and Rolf J. Haug1

1Institute for Solid State Physics, Leibniz Universität Hannover, Appelstraße 2, D-30167 Hannover, Germany
2Laboratory for Micro- and Nanotechnology, Paul Scherrer Institut, Villigen-PSI CH-5232, Switzerland
3Institute for Semiconductor Nanoelectronics, IBN-1, Forschungszentrum Jülich, D-52425 Jülich, Germany and Jülich Aachen Research Alliance on Fundamentals of Future Information Technology (JARAFIT)

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(Received 29 March 2010; accepted 10 May 2010; published online 3 June 2010)

Magnetotunneling spectroscopy was employed to probe the confinement in vertical Si/Ge double-barrier resonant tunneling diodes with regularly distributed Ge quantum dots. Their current-voltage characteristics reveal a steplike behavior in the vicinity of zero bias, indicating resonant tunneling of heavy-holes via three-dimensionally confined unoccupied hole states in Ge quantum dots. Assuming parabolic confinement, we extract the strength of the confinement potential of quantum dots.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

Ge-Si alloys, magnetic tunnelling, magneto-optical effects, quantum dots, resonant tunnelling, self-assembly

PACS

  • 78.20.Ls

    Magneto-optical effects

  • 73.21.La

    Quantum dots

  • 75.75.Lf

    Electronic structure of magnetic nanoparticles

  • 75.70.Cn

    Magnetic properties of interfaces (multilayers, superlattices, heterostructures)

  • 81.16.Dn

    Self-assembly

  • 73.40.Jn

    Metal-to-metal contacts

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3442508

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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