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Applied Physics Letters / Volume 96 / Issue 22 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 96, 222108 (2010); http://dx.doi.org/10.1063/1.3428777 (3 pages)

Improvement of resistance switching characteristics in a thin FeOx transition layer of TiN/SiO2/FeOx/FePt structure by rapid annealing

Li-Wei Feng1, Chun-Yen Chang1, Yao-Feng Chang1, Ting-Chang Chang2,3, Shin-Yuan Wang1, Shih-Ching Chen2, Chao-Cheng Lin1, Shih-Cheng Chen4, and Pei-Wei Chiang1

1Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, Hsin-Chu 300, Taiwan
2Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan
3Center for Nanoscience and Nanotechnology, National Sun Yat-Sen University, Kaohsiung 804, Taiwan
4Department of Electrical Engineering and Institute of Electronic Engineering, National Tsing Hua University, Hsin-Chu 300, Taiwan

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(Received 5 March 2010; accepted 21 April 2010; published online 3 June 2010)

In this paper, the influence of a 600 °C rapid thermal annealing for 60 s on the improvements of resistance switching behaviors in a TiN/SiO2/FeOx/FePt structure is reported. It is found that besides the distinct reduction in memory switching parameters in forming voltage, set/reset voltages, and their dispersions, the resistance ratio of high-resistance state to low-resistance state is also enlarged after annealing. The effects of annealing on improving the resistance switching properties are discussed by x-ray diffraction and x-ray photon-emission spectra depth profile results. Additionally, good retention characteristics are exhibited in the annealed TiN/SiO2/FeOx/FePt resistance switching memory.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

iron alloys, iron compounds, platinum alloys, random-access storage, rapid thermal annealing, silicon compounds, titanium compounds, X-ray diffraction, X-ray photoelectron spectra

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3428777

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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    L. W. Feng, C. Y. Chang, Y. F. Chang, W. R. Chen, S. Y. Wang, P. W. Chiang, and T. C. Chang, Appl. Phys. Lett. 96, 052111 (2010)APPLAB000096000005052111000001.


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