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Applied Physics Letters / Volume 96 / Issue 22 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 96, 222109 (2010); http://dx.doi.org/10.1063/1.3429585 (3 pages)

Silicon surface passivation by an organic overlayer of 9,10-phenanthrenequinone

Sushobhan Avasthi1,2, Yabing Qi1,2, Grigory K. Vertelov3,2, Jeffrey Schwartz3,2, Antoine Kahn1,2, and James C. Sturm1,2

1Dept. of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA
2Princeton Institute for the Science and Technology of Materials (PRISM), Princeton University, Princeton, New Jersey 08544, USA
3Dept. of Chemistry, Princeton University, Princeton, New Jersey 08544, USA

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(Received 5 March 2010; accepted 19 April 2010; published online 4 June 2010)

Merged organic-silicon heterojunction devices require the passivation of dangling bonds at the silicon surface, preferably with a low-temperature process. In this paper, we demonstrate the high-quality passivation of the silicon (100) surface using an organic molecule (9,10-phenanthrenequinone, PQ). PQ reacts with the dangling bonds, thus providing a bridge between organic semiconductors and silicon. We measure low recombination velocities ( ∼ 150 cm/s) at the PQ-silicon interface. Metal/organic-insulator/silicon capacitors and transistors prove that at PQ-silicon interface, the Fermi level can be modulated. The formation of an inversion layer with electron mobility of 600 cm2/V∙s further demonstrates the passivation quality of PQ.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

dangling bonds, electron mobility, elemental semiconductors, MIS capacitors, organic semiconductors, passivation, semiconductor heterojunctions, silicon, transistors

PACS

  • 81.65.Rv

    Passivation

  • 73.40.Lq

    Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

  • 84.32.Tt

    Capacitors

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3429585

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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