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Applied Physics Letters / Volume 96 / Issue 22 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 96, 222110 (2010); http://dx.doi.org/10.1063/1.3446839 (3 pages)

Influence of the oxidizing species on the Ge dangling bonds at the (100)Ge/GeO2 interface

Silvia Baldovino1, Alessandro Molle2, and Marco Fanciulli1,2

1Dipartimento di Scienza dei Materiali, Università degli Studi di Milano Bicocca, Via Cozzi 53, 20125 Milano, Italy
2CNR-IMM Laboratorio MDM, Via C. Olivetti 2, 20041 Agrate Brianza (MB), Italy

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(Received 2 March 2010; accepted 16 May 2010; published online 4 June 2010)

The nature of the defects present at various Ge/GeO2 interfaces has been investigated by means of electrically detected magnetic resonance (EDMR) spectroscopy. GeO2 thin films were grown by atomic oxygen, ozone, and molecular oxygen exposure. The defect microstructure is sensitive to the oxidizing species, i.e., to the oxidation mechanism. Different EDMR spectra are correlated with the specific electrical response of the corresponding Ge/GeO2 metal-oxide-semiconductor structures.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

crystal defects, crystal microstructure, dangling bonds, elemental semiconductors, germanium, germanium compounds, insulating thin films, interface structure, magnetic resonance spectroscopy, MIS structures, oxidation

PACS

  • 68.35.Ct

    Interface structure and roughness

  • 68.55.Ln

    Defects and impurities: doping, implantation, distribution, concentration, etc.

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3446839

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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