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Applied Physics Letters / Volume 96 / Issue 22 / ELECTRONIC TRANSPORT AND SEMICONDUCTORS

Appl. Phys. Lett. 96, 222111 (2010); http://dx.doi.org/10.1063/1.3447941 (3 pages)

Extremely low drift of resistance and threshold voltage in amorphous phase change nanowire devices

Mukut Mitra, Yeonwoong Jung, Daniel S. Gianola, and Ritesh Agarwal

Department of Materials Science and Engineering, University of Pennsylvania, 3231 Walnut Street, Philadelphia, Pennsylvania 19104-6272, USA

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(Received 15 April 2010; accepted 15 May 2010; published online 4 June 2010)

Time-dependent drift of resistance and threshold voltage in phase change memory (PCM) devices is of concern as it leads to data loss. Electrical drift in amorphous chalcogenides has been argued to be either due to electronic or stress relaxation mechanisms. Here we show that drift in amorphized Ge2Sb2Te5 nanowires with exposed surfaces is extremely low in comparison to thin-film devices. However, drift in stressed nanowires embedded under dielectric films is comparable to thin-films. Our results shows that drift in PCM is due to stress relaxation and will help in understanding and controlling drift in PCM devices.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

antimony compounds, chalcogenide glasses, dielectric thin films, germanium compounds, nanoelectronics, nanowires, phase change materials, semiconductor quantum wires, semiconductor storage, stress relaxation, tellurium compounds

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3447941

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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    I. V. Karpov, M. Mitra, D. Kau, G. Spadini, Y. A. Kryukov, and V. G. Karpov, J. Appl. Phys. 102, 124503 (2007)JAPIAU000102000012124503000001.

    V. G. Karpov and M. Grimsditch, Phys. Rev. B 48, 6941 (1993).

    O. B. Tsiok, V. V. Brazhkin, A. G. Lyapin, and L. G. Khvostantsev, Phys. Rev. Lett. 80, 999 (1998).

    M. T. Loponen, R. C. Dynes, and V. Narayanamurti, Phys. Rev. B 25, 1161 (1982).

    S. Braga, A. Cabrini, and G. Torelli, Appl. Phys. Lett. 94, 092112 (2009)APPLAB000094000009092112000001.

    R. A. Street and N. F. Mott, Phys. Rev. Lett. 35, 1293 (1975).

    M. Kastner, D. Adler, and H. Fritzsche, Phys. Rev. Lett. 37, 1504 (1976).

    J. Kalb, F. Spaepen, T. P. L. Pedersen, and M. Wuttig, J. Appl. Phys. 94, 4908 (2003)JAPIAU000094000008004908000001.

    H. S. Park and P. A. Klein, Phys. Rev. B 75, 085408 (2007).

    Q. Guo, M. Li, Y. Li, L. Shi, T. C. Chong, J. A. Kalb, and C. V. Thompson, Appl. Phys. Lett. 93, 221907 (2008)APPLAB000093000022221907000001.

    T. P. Leervard Pederson, J. Kalb, W. K. Njoroge, D. Wamwangi, M. Wuttig, and F. Spaepen, Appl. Phys. Lett. 79, 3597 (2001)APPLAB000079000022003597000001.


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