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Applied Physics Letters / Volume 96 / Issue 22 / DIELECTRICS AND FERROELECTRICITY

Appl. Phys. Lett. 96, 222901 (2010); http://dx.doi.org/10.1063/1.3442485 (3 pages)

Kinetics of Ta ions penetration into porous low-k dielectrics under bias-temperature stress

Ming He, Ya Ou, Pei-I Wang, and Toh-Ming Lu

Department of Physics, Applied Physics, & Astronomy, Center for Integrated Electronics, Rensselaer Polytechnic Institute, Troy, New York 12180, USA

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(Received 9 March 2010; accepted 10 May 2010; published online 1 June 2010)

It is known that Ta, a popular diffusion barrier material, can itself penetrate into low-k dielectrics under bias-temperature stress. In this work, we derived a model which directly correlates the diffusivity of Ta ions to the rate of flatband voltage shift (FBS) of the Ta/methyl silsesquixane (MSQ)/Si capacitors. From our experimentally measured constant FBS rate, the Ta diffusivity and activation energy were determined. It appears that an increase in the porosity of MSQ film enhances the Ta diffusivity but does not affect the associated activation energy. This suggests the Ta ion diffusion is mainly through interconnected pore surfaces.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

diffusion barriers, elemental semiconductors, low-k dielectric thin films, MIS capacitors, porosity, porous materials, silicon, tantalum

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3442485

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    A. Mallikarjunan, S. P. Murarka, and T. M. Lu, Appl. Phys. Lett. 79, 1855 (2001)APPLAB000079000012001855000001.

    T. L. Tan, C. L. Gan, A. Y. Du, and C. K. Cheng, J. Appl. Phys. 106, 043517 (2009)JAPIAU000106000004043517000001.

    K. -L. Fang and B. -Y. Tsui, J. Appl. Phys. 93, 5546 (2003)JAPIAU000093000009005546000001.

    K. -S. Kim, Y. -C. Joo, K. -B. Kim, and J. -Y. Kwon, J. Appl. Phys. 100, 063517 (2006)JAPIAU000100000006063517000001.


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