APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Applied Physics Letters / Volume 96 / Issue 22 / DIELECTRICS AND FERROELECTRICITY

Appl. Phys. Lett. 96, 222902 (2010); http://dx.doi.org/10.1063/1.3442502 (3 pages)

Improvement of memory performance by high temperature annealing of the Al2O3 blocking layer in a charge-trap type flash memory device

Jong Kyung Park1, Youngmin Park1, Sung Kyu Lim2, Jae Sub Oh2, Moon Sig Joo3, Kwon Hong3, and Byung Jin Cho1

1Department of Electrical Engineering, Korea Advanced Institute of Science and Technology, 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701, Republic of Korea
2National Nanofab Center, 373-1 Guseong-dong, Yuseong-gu, Daejeon 305-701, Republic of Korea
3Hynix Semiconductor Inc., San 136-1, Ami-ri, Bubal-eub, Icheon-si, Gyeonggi-do 467-701, Republic of Korea

View MapView Map

(Received 5 February 2010; accepted 8 May 2010; published online 1 June 2010)

The effect of postdeposition annealing (PDA) of the Al2O3 blocking layer in a charge-trap type memory device is investigated. Significant improvements are achieved by high temperature PDA at 1100 °C, achieving faster operation speed, good charge retention, and a wide program/erase window. Experimental evidence shows that the underlying mechanism is not the changes in the band gap of the crystallized Al2O3 but is due to the higher trap density in the Si3N4 trapping layer at a deeper energy level by the intermixing between Al2O3 and Si3N4. The reduced trapping efficiency of the annealed Al2O3 also helps improve the retention property.

© 2010 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

aluminium compounds, annealing, energy gap, flash memories, silicon compounds

PACS

  • 84.30.Sk

    Pulse and digital circuits

  • 61.72.Cc

    Kinetics of defect formation and annealing

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3442502

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    C. Papadas, G. Ghibaudo, G. Pananakakis, C. Riva, and P. Mortini, J. Appl. Phys. 71, 4589 (1992)JAPIAU000071000009004589000001.


For access to citing articles, you need to log in.


Figures (4)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Improvement of memory performance by high temperature annealing of the Al2O3 blocking layer in a charge-trap type flash memory device
  2. Kinetics of Ta ions penetration into porous low-k dielectrics under bias-temperature stress
  3. The origin of large overestimation of the magnetic entropy changes calculated directly by Maxwell relation
  4. Control of magnetic and electric responses with electric and magnetic fields in magnetoelectric heterostructures
  5. Magnetic properties and phase stability of L21 phase in Co2Mn(Ga1−xZx)(Z = Si, Ge, and Sn) Heusler alloys
Go to AIP Home
Copyright © American Institute of Physics
close