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Applied Physics Letters / Volume 96 / Issue 22 / DIELECTRICS AND FERROELECTRICITY

Appl. Phys. Lett. 96, 222904 (2010); http://dx.doi.org/10.1063/1.3437090 (3 pages)

Ferroelectric Q-phase in a NaNbO3 epitaxial thin film

Yu. I. Yuzyuk1, R. A. Shakhovoy1, S. I. Raevskaya1, I. P. Raevski1, M. El Marssi2, M. G. Karkut2, and P. Simon3

1Faculty of Physics, Southern Federal University, 5, Zorge str., Rostov-on-Don 344090, Russia
2Laboratoire de Physique de la Matière Condensée, Université de Picardie Jules Verne, 33, Rue Saint Leu, F-80039 Amiens, France
3CEMHTI, UPR 3079 CNRS, 1D, Av. de la Recherche Scientifique, F-45071 Orléans, France

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(Received 12 March 2010; accepted 28 April 2010; published online 3 June 2010)

Epitaxial NaNbO3 thin films have been grown by pulsed laser deposition on cubic (00l) MgO substrate with epitaxial (La0.5Sr0.5)CoO3 buffer layer. Micro-Raman spectroscopy studies revealed that the ferroelectric Q phase (Pmc21, Z = 4) is stable in a 250-nm-thick film in contrast to the antiferroelectric phase P (Pbma, Z = 8) known to exist in the bulk single crystals and ceramics of undoped stoichiometric NaNbO3. Temperature-dependent Raman spectra indicate that the Q phase is stable over a wide temperature range (at least from 80 to 600 K), while the low-temperature ferroelectric rhombohedral phase N, typical for NaNbO3 single crystals, is not observed.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

antiferroelectric materials, epitaxial layers, ferroelectric materials, ferroelectric thin films, pulsed laser deposition, Raman spectra, sodium compounds

PACS

  • 77.80.-e

    Ferroelectricity and antiferroelectricity

  • 77.55.fj

    Niobate- and tantalate-based films

  • 78.30.Hv

    Other nonmetallic inorganics

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3437090

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    Yu. I. Yuzyuk, E. Gagarina, P. Simon, L. A. Reznitchenko, L. Hennet, and D. Thiaudiere, Phys. Rev. B 69, 144105 (2004).

    N. A. Pertsev, A. G. Zembilgotov, and A. K. Tagantsev, Phys. Rev. Lett. 80, 1988 (1998).

    V. B. Shirokov, Yu. I. Yuzyuk, B. Dkhil, and V. V. Lemanov, Phys. Rev. B 79, 144118 (2009).

    M. Tyunina and J. Levoska, Appl. Phys. Lett. 95, 102903 (2009)APPLAB000095000010102903000001.

    O. Diéguez, K. M. Rabe, and D. Vanderbilt, Phys. Rev. B 72, 144101 (2005).

    F. De Guerville, M. El Marssi, I. P. Raevski, M. G. Karkut, and Yu. I. Yuzyuk, Phys. Rev. B 74, 064107 (2006).


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