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Appl. Phys. Lett. 96, 223102 (2010); http://dx.doi.org/10.1063/1.3432438 (3 pages)

Spin-orbit interaction effects on magnetoresistance in graphene-based ferromagnetic double junctions

Chunxu Bai1, Juntao Wang2, Shuanwen Jia1, and Yanling Yang1

1College of Physics and Electrical Engineering, Anyang Normal University, Anyang 455000, People's Republic of China
2Department of Mathematics, Henan Institute of Science and Technology, Xinxiang 453000, People's Republic of China

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(Received 26 March 2010; accepted 1 May 2010; published online 1 June 2010)

Based on the transfer-matrix method, the spin polarized transport properties through a ballistic graphene-based quantum tunneling junctions with the spin-orbit interaction have been investigated. It is found that the magnetoresistance (MR) oscillates with the Rashba spin-orbit interaction (RSOI) and the intrinsic spin-orbit interaction (ISOI). In addition, when the RSOI is present, the negative MR can be observed due to the spin-flip effect, whereas for the ISOI alone no such negative MR can be found. It is anticipated to apply such a phenomenon to design the electron devices based on the graphene.

© 2010 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 75.70.Cn

    Magnetic properties of interfaces (multilayers, superlattices, heterostructures)

  • 75.70.Tj

    Spin-orbit effects

  • 75.76.+j

    Spin transport effects

  • 75.47.Pq

    Other materials

  • 73.23.Ad

    Ballistic transport

  • 72.25.Mk

    Spin transport through interfaces

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

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