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Applied Physics Letters / Volume 96 / Issue 22 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 96, 223103 (2010); http://dx.doi.org/10.1063/1.3442919 (3 pages)

Negative differential resistance and resistive switching behaviors in Cu2S nanowire devices

Xiaohua Liu, Matthew T. Mayer, and Dunwei Wang

Department of Chemistry, Merkert Chemistry Center, Boston College, 2609 Beacon Street, Chestnut Hill, Massachusetts 02467, USA

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(Received 24 March 2010; accepted 10 May 2010; published online 1 June 2010)

Two-terminal devices of Cu2S/ZnO core/shell nanowires were fabricated and measured. Forward bias sweeping produced a rectified I-V characteristic of a diode, with turn-on voltages varying from 150 to 300 mV. The turn-on voltages depended on the rate at which the bias was varied. When the bias scan was reversed, a resistive switching (RS) behavior was observed. A low-resistance state was measured, and the diode characteristic diminished. At −50 to −150 mV, negative differential resistance (NDR) was observed, after which the diode behavior was restored. This phenomenon was explained using the diffusion of Cu+ within Cu2S. ZnO acted to limit RS to the positive bias range and NDR to the negative bias range.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

copper compounds, II-VI semiconductors, nanofabrication, nanowires, negative resistance, negative resistance devices, switching, wide band gap semiconductors, zinc compounds

PACS

  • 73.61.Ga

    II-VI semiconductors

  • 61.46.Km

    Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)

  • 72.20.Ht

    High-field and nonlinear effects

  • 85.30.Tv

    Field effect devices

  • 81.16.-c

    Methods of micro- and nanofabrication and processing

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3442919

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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