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Applied Physics Letters / Volume 96 / Issue 22 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 96, 223107 (2010); http://dx.doi.org/10.1063/1.3441404 (3 pages)

On direct-writing methods for electrically contacting GaAs and Ge nanowire devices

Guannan Chen1, Eric M. Gallo2, Joan Burger1, Bahram Nabet2, Adriano Cola3, Paola Prete3, Nico Lovergine4, and Jonathan E. Spanier1

1Department of Materials Science and Engineering, Drexel University, Philadelphia, Pennsylvania 19104, USA
2Department of Electrical and Computer Engineering, Drexel University, Philadelphia, Pennsylvania 19104, USA
3Istituto per la Microelettronica e Microsistemi (IMM), Consiglio Nazionale delle Richerche (CNR), Lecce 73100, Italy
4Department of Innovation Engineering, Universitá del Salento, Lecce 73100, Italy

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(Received 5 April 2010; accepted 9 May 2010; published online 2 June 2010)

The electronic transport and gating characteristics in GaAs and Ge nanowires (NWs) are altered significantly following either indirect or direct exposure to a focused Ga+ ion beam (FIB), such as that used to produce Pt electrical contacts to NWs. While these results challenge the assumptions made in some previously reported work relating to the electronic properties of semiconductor NWs using FIB-assisted production of contacts and/or their leads, local electron beam induced deposition is shown to be a reliable and facile route for producing robust electrical contacts to individual vapor phase-grown NWs in a manner that enables study of their actual carrier transport properties.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

elemental semiconductors, focused ion beam technology, gallium arsenide, germanium, III-V semiconductors, nanowires, vapour phase epitaxial growth

PACS

  • 73.61.Ey

    III-V semiconductors

  • 81.15.Kk

    Vapor phase epitaxy; growth from vapor phase

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3441404

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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