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Applied Physics Letters / Volume 96 / Issue 22 / NANOSCALE SCIENCE AND DESIGN

Appl. Phys. Lett. 96, 223110 (2010); http://dx.doi.org/10.1063/1.3431572 (3 pages)

Characterization of electronic structure of silicon nanocrystals in silicon nitride by capacitance spectroscopy

Chang-Hee Cho, Baek-Hyun Kim, Sang-Kyun Kim, and Seong-Ju Park

Department of Materials Science and Engineering, Gwangju Institute of Science and Technology, Gwangju 500-712, Republic of Korea

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(Received 26 January 2010; accepted 27 April 2010; published online 2 June 2010)

The electronic structure of silicon nanocrystals embedded in a silicon nitride insulating film is identified by using a capacitance spectroscopy. The tunneling capacitor device, which is used in this study, consists of a tunneling silicon nitride, an array of silicon nanocrystals embedded in a silicon nitride film, and a blocking silicon nitride deposited on p-type (100) Si substrate. The absolute position of the lowest conduction and the highest valence levels of the silicon nanocrystal is revealed and the band-gap energy of silicon nanocrystals estimated by the capacitance spectroscopy agrees well with that measured by photoluminescence spectroscopy.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

capacitors, electrical conductivity, photoluminescence, silicon, silicon compounds, thin films, tunnelling, valence bands

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3431572

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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