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Applied Physics Letters / Volume 96 / Issue 22 / DEVICE PHYSICS

Appl. Phys. Lett. 96, 223501 (2010); http://dx.doi.org/10.1063/1.3442486 (3 pages)

Current transport and barrier height evaluation in Ni/InAlN/GaN Schottky diodes

D. Donoval1, A. Chvála1, R. Šramatý1, J. Kováč1, J.-F. Carlin2, N. Grandjean2, G. Pozzovivo3, J. Kuzmík3,4, D. Pogany3, G. Strasser3, and P. Kordoš1,4

1Department of Microelectronics, Slovak University of Technology, Ilkovicova, SK-81219 Bratislava, Slovakia
2IPEQ, Ecole Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland
3Institute for Solid-State Electronics, Technical University, A-1040 Vienna, Austria
4Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava, Slovakia

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(Received 18 March 2010; accepted 10 May 2010; published online 1 June 2010)

The current-voltage characteristics of the Ni/InAlN/GaN Schottky diodes were measured at various temperatures in the range of 300–700 K. The experimental data were analyzed considering different current-transport mechanisms. From the analysis it follows that the tunneling current, which might be due to a multistep tunneling along dislocations, is the dominant component at all temperatures in the samples investigated. The barrier height of the Ni/InAlN/GaN Schottky diodes, evaluated from the thermionic emission current, shows a slightly negative temperature coefficient and its value at 300 K is ≥ 1.46 eV. This is significantly higher barrier height than reported before (<1 eV). This discrepancy follows from an incorrect evaluation using the intercept and slope of a measured characteristic without separation of the individual current components.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium compounds, dislocation density, electrical conductivity, gallium compounds, III-V semiconductors, indium compounds, nickel, Schottky barriers, Schottky diodes, tunnelling, wide band gap semiconductors

PACS

  • 85.30.Kk

    Junction diodes

  • 85.30.Hi

    Surface barrier, boundary, and point contact devices

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3442486

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    E. Arslan, S. Altindal, S. Ozcelik, and E. Ozbay, J. Appl. Phys. 105, 023705 (2009)JAPIAU000105000002023705000001.

    E. Arslan, S. Butun, and E. Ozbay, Appl. Phys. Lett. 94, 142106 (2009)APPLAB000094000014142106000001.


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