• Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Appl. Phys. Lett. 96, 223502 (2010); http://dx.doi.org/10.1063/1.3442499 (3 pages)

Roles of interfacial TiOxN1−x layer and TiN electrode on bipolar resistive switching in TiN/TiO2/TiN frameworks

June Sik Kwak1, Young Ho Do1, Yoon Cheol Bae2, Hyun Sik Im3, Jong Hee Yoo4, Min Gyu Sung4, Yun Taek Hwang4, and Jin Pyo Hong1,2

1Department of Physics, Hanyang University, Seoul 133-791, Republic of Korea
2Department of Engineering of Nano-Semiconductor, Hanyang University, Seoul 133-791, Republic of Korea
3Department of Semiconductor Science, Dongguk University, Seoul 100-715, Republic of Korea
4Hynix Semiconductor Inc., Icheon-si Kyoungki-do 467-701, Republic of Korea

View MapView Map

(Received 27 January 2010; accepted 8 May 2010; published online 1 June 2010)

Reversible counter-clockwise and clockwise resistive switching in a TiN/TiO2/TiN structure was studied by different polarities of bias voltage. The nature of the bipolar switching phenomenon is related to the creation and annihilation of filament paths caused by redox reactions at locally confined interfaces between the TiO2 layer and TiN electrode. The analysis of electron energy loss spectroscopy (EELS) confirmed the formation of interfacial TiOxN1−x layer between the TiO2 and TiN bottom electrode. The TiOxN1−x layer reduces current levels of ON and OFF states by partially blocking oxygen ion drift to the TiN bottom electrode.

© 2010 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

PACS

  • 68.35.Fx

    Diffusion; interface formation

  • 82.45.Fk

    Electrodes

  • 79.20.Uv

    Electron energy loss spectroscopy

  • 82.65.+r

    Surface and interface chemistry; heterogeneous catalysis at surfaces

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

For access to fully linked references, you need to log in.
    S. Seo, M. J. Lee, D. H. Seo, E. J. Jeoung, D. S. Suh, Y. S. Joung, I. K. Yoo, I. R. Hwang, S. H. Kim, I. S. Byun, J. S. Kim, J. S. Choi, and B. H. Park, Appl. Phys. Lett. 85, 5655 (2004)APPLAB000085000023005655000001.

    K. M. Kim, B. J. Choi, and C. S. Hwang, Appl. Phys. Lett. 90, 242906 (2007)APPLAB000090000024242906000001.

    T. Fujii, M. Kawasaki, A. Sawa, H. Akoh, Y. Kawazoe, and Y. Tokura, Appl. Phys. Lett. 86, 012107 (2005)APPLAB000086000001012107000001.

    M. Fujimoto, H. Koyama, M. Konagai, Y. Hosoi, K. Ishihara, S. Ohnishi, and N. Awaya, Appl. Phys. Lett. 89, 223509 (2006)APPLAB000089000022223509000001.

    C. Yoshida, K. Tsunoda, H. Noshiro, and Y. Sugiyama, Appl. Phys. Lett. 91, 223510 (2007)APPLAB000091000022223510000001.

    Y. B. Nian, J. Strozier, N. J. Wu, X. Chen, and A. Ignatiev, Phys. Rev. Lett. 98, 146403 (2007).

    M. K. Yang, J. W. Park, T. K. Ko, and J. K. Lee, Appl. Phys. Lett. 95, 042105 (2009)APPLAB000095000004042105000001.

    Y. H. Do, J. S. Kwak, J. P. Hong, K. H. Jung, and H. S. Im, J. Appl. Phys. 104, 114512 (2008)JAPIAU000104000011114512000001.

    Y. H. Do, J. S. Kwak, Y. C. Bae, K. H. Jung, H. S. Im, and J. P. Hong, Appl. Phys. Lett. 95, 093507 (2009)APPLAB000095000009093507000001.

    W. Guan, M. Liu, S. Long, Q. Liu, and W. Wang, Appl. Phys. Lett. 93, 223506 (2008)APPLAB000093000022223506000001.

    M. Mandl and H. Hoffmann, J. Appl. Phys. 68, 2127 (1990)JAPIAU000068000005002127000001.

    B. Sun, Y. X. Liu, L. F. Liu, N. Xu, Y. Wang, X. Y. Liu, R. Q. Han, and J. F. Kang, J. Appl. Phys. 105, 061630 (2009)JAPIAU000105000006061630000001.


For access to citing articles, you need to log in.


Figures (4)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close
Google Calendar
ADVERTISEMENT

close