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Applied Physics Letters / Volume 96 / Issue 22 / DEVICE PHYSICS

Appl. Phys. Lett. 96, 223505 (2010); http://dx.doi.org/10.1063/1.3446835 (3 pages)

Temperature effects on metal-alumina-nitride-oxide-silicon memory operations

Andrea Padovani1,2, Luca Larcher1,2, Dawei Heh3, Gennadi Bersuker3, Vincenzo Della Marca2,4, and Paolo Pavan2,4

1DISMI, Università di Modena e Reggio Emilia, 42122 Reggio Emilia, Italy
2Italian University Nano-Electronic Team (IU.NET), 40125 Bologna, Italy
3SEMATECH, Austin, Texas 78741, USA
4DII, Università di Modena e Reggio Emilia, 41125 Modena, Italy

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(Received 11 March 2010; accepted 14 May 2010; published online 3 June 2010)

We present a detailed investigation of temperature effects on the operation of TaN/Al2O3/Si3N4/SiO2/Si (TANOS) memory devices. We show that not only retention but also program and erase operations are affected significantly by temperature. Using a large set of experimental data and simulations on a variety of TANOS stacks, we show that the temperature dependence of TANOS program and erase operations can be explained by accounting for that the alumina dielectric constant increases by 20%–25% over a 125 K temperature range.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium compounds, capacitors, elemental semiconductors, semiconductor storage, silicon, tantalum compounds, transistors

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3446835

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    M. Chang, M. Jo, S. Kim, Y. Ju, S. Jung, J. Lee, J. Yoon, H. Hwang, and C. Lee, Appl. Phys. Lett. 93, 232105 (2008)APPLAB000093000023232105000001.


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