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Applied Physics Letters / Volume 96 / Issue 22 / DEVICE PHYSICS

Appl. Phys. Lett. 96, 223506 (2010); http://dx.doi.org/10.1063/1.3443712 (3 pages)

Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device

Y. Gong1, M. Tapajna1, S. Bakalova1, Y. Zhang2, J. H. Edgar2, Y. Zhang3, M. Dudley3, M. Hopkins4, and M. Kuball1

1H.H. Wills Physics Laboratory, University of Bristol, Bristol BS8 1TL, United Kingdom
2Department of Chemical Engineering, Kansas State University, Manhattan, Kansas 66506, USA
3Department of Materials Science and Engineering, SUNY, Stony Brook, New York 11794, USA
4Department of Electronic and Electrical Engineering, University of Bath, Bath BA2 7AY, United Kingdom

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(Received 13 January 2010; accepted 12 May 2010; published online 4 June 2010)

B12As2/SiC pn heterojunction diodes based on the radiation-hard B12As2 deposited on (0001) n-type 4H–SiC via chemical vapor deposition were demonstrated. The diodes exhibit good rectifying behavior with an ideality factor of 1.8 and a leakage current as low as 9.4×10−6 A/cm2. Capacitance-voltage measurements using a two-frequency technique showed a hole concentration of ∼ 1.8–2.0×1017 cm−3 in B12As2 with a slight increase near the interface due to the presence of an interfacial layer to accommodate lattice mismatch. Band offsets between the B12As2 and SiC were estimated to be ∼ 1.06 eV and 1.12 eV for conduction band and valance band, respectively.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

boron compounds, chemical vapour deposition, conduction bands, leakage currents, p-n heterojunctions, semiconductor diodes, silicon compounds, wide band gap semiconductors

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3443712

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    S. Bakalova, Y. Gong, C. Cobet, N. Esser, Y. Zhang, J. H. Edgar, Y. Zhang, M. Duddley, and M. Kuball, Phys. Rev. B 81, 075114 (2010).

    D. Emin, Phys. Today 40(1), 55 (1987)PHTOAD000040000001000055000001.

    H. Chen, G. Wang, M. Dudley, Z. Xu, J. H. Edgar, T. Batten, M. Kuball, L. Zhang, and Y. Zhu, Appl. Phys. Lett. 92, 231917 (2008)APPLAB000092000023231917000001.

    H. Chen, G. Wang, M. Dudley, L. Zhang, L. Wu, Y. Zhu, Z. Xu, J. H. Edgar, and M. Kuball, J. Appl. Phys. 103, 123508 (2008)JAPIAU000103000012123508000001.

    S. H. Wang, E. M. Lysczek, B. Liu, S. E. Mohney, Z. Xu, R. Nagarajan, and J. H. Edgar, Appl. Phys. Lett. 87, 042103 (2005)APPLAB000087000004042103000001.

    C. Persson and U. Lindefelt, Phys. Rev. B 54, 10257 (1996).


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