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Applied Physics Letters / Volume 96 / Issue 22 / DEVICE PHYSICS

Appl. Phys. Lett. 96, 223507 (2010); http://dx.doi.org/10.1063/1.3427417 (3 pages)

Persistent photoconductivity due to trapping of induced charges in Sn/ZnO thin film based UV photodetector

Harish Kumar Yadav, K. Sreenivas, and Vinay Gupta

Department of Physics and Astrophysics, University of Delhi, Delhi 110007, India

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(Received 14 November 2009; accepted 17 April 2010; published online 4 June 2010)

Photoconductivity relaxation in rf magnetron sputtered ZnO thin films integrated with ultrathin tin metal overlayer is investigated. Charge carriers induced at the ZnO-metal interface by the tin metal overlayer compensates the surface lying trap centers and leads to the enhanced photoresponse. On termination of ultraviolet radiation, recombination of the photoexcited electrons with the valence band holes leaves the excess carriers deeply trapped at the recombination center and holds the dark conductivity level at a higher value. Equilibrium between the recombination centers and valence band, due to trapped charges, eventually stimulates the persistent photoconductivity in the Sn/ZnO photodetectors.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

dark conductivity, dielectric thin films, II-VI semiconductors, photoconductivity, photodetectors, semiconductor thin films, sputter deposition, tin, ultraviolet radiation effects, valence bands, wide band gap semiconductors, zinc compounds

PACS

  • 72.40.+w

    Photoconduction and photovoltaic effects

  • 85.60.Gz

    Photodetectors (including infrared and CCD detectors)

  • 78.66.Hf

    II-VI semiconductors

  • 77.55.-g

    Dielectric thin films

  • 81.15.Cd

    Deposition by sputtering

  • 61.80.Ba

    Ultraviolet, visible, and infrared radiation effects (including laser radiation)

  • 73.20.At

    Surface states, band structure, electron density of states

  • 68.55.ag

    Semiconductors

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3427417

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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