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Applied Physics Letters / Volume 96 / Issue 22 / DEVICE PHYSICS

Appl. Phys. Lett. 96, 223508 (2010); http://dx.doi.org/10.1063/1.3447933 (3 pages)

Aharonov–Bohm ring with a side-coupled quantum dot array as a spin switch

Xing-Tao An1,2 and Jian-Jun Liu2,3

1School of Sciences, Hebei University of Science and Technology, Shijiazhuang, Hebei 050018, People’s Republic of China
2College of Physical Science and Information Engineering, Hebei Normal University, Shijiazhuang, Hebei 050016, People’s Republic of China
3Hebei Advanced Thin Films Laboratory, Shijiazhuang 050016, People’s Republic of China

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(Received 30 April 2010; accepted 16 May 2010; published online 4 June 2010)

We study the spin polarization and the spin accumulation in an Aharonov–Bohm ring structure, in which a quantum dot (QD) array is side-coupled to one arm of the ring and the Rashba spin-orbit interaction exists in the other. The device can be as a spin switch by decreasing the tunneling coupling between the QD array and the ring. Moreover, we find that the spin polarization and the spin accumulation in the QD are affected by the number of the QDs in the QD array and can be controlled by the strength of the Rashba spin-orbit interaction and the bias on the Aharonov–Bohm ring.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

Aharonov-Bohm effect, quantum dots, spin polarised transport, spin-orbit interactions, tunnelling

PACS

  • 73.21.La

    Quantum dots

  • 72.25.-b

    Spin polarized transport

  • 71.70.Ej

    Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3447933

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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