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Applied Physics Letters / Volume 96 / Issue 22 / DEVICE PHYSICS

Appl. Phys. Lett. 96, 223509 (2010); http://dx.doi.org/10.1063/1.3428783 (3 pages)

Observations of negative bias temperature instability defect generation via on the fly electron spin resonance

J. T. Ryan1, P. M. Lenahan1, T. Grasser2, and H. Enichlmair3

1The Pennsylvania State University, University Park, Pennsylvania 16802, USA
2Technical University of Vienna Gusshausstrasse, 27-29/E360, 1040 Vienna, Austria
3Austriamicrosystems AG, Schloss Premstaetten, A-8141 Unterpremstaetten, Austria

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(Received 22 December 2009; accepted 19 April 2010; published online 4 June 2010)

We demonstrate “on the fly” electron spin resonance (ESR) in which the defect generation process in the negative bias temperature instability (NBTI) can be observed without recovery contamination. Elevated temperature and modest negative gate bias generates ESR spectra due to E′ center defects. The NBTI generated E′ center spectrum disappears upon stress condition removal, a result consistent with recovery. Our observations support the idea that NBTI is triggered by inversion layer hole capture at an E′ precursor site which leads to depassivation of nearby interface trap precursors.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

crystal defects, inversion layers, paramagnetic resonance, passivation, tunnelling

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3428783

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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    J. F. Conley, P. M. Lenahan, A. J. Lelis, and T. R. Oldham, Appl. Phys. Lett. 67, 2179 (1995)APPLAB000067000015002179000001.

    P. M. Lenahan and P. V. Dressendorfer, J. Appl. Phys. 55, 3495 (1984)JAPIAU000055000010003495000001.


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