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Applied Physics Letters / Volume 96 / Issue 22 / ERRATA
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Appl. Phys. Lett. 96, 229901 (2010); http://dx.doi.org/10.1063/1.3442492 (1 page)

Erratum: “Influence of random roughness on cantilever curvature sensitivity” [ Appl. Phys. Lett. 96, 041912 (2010) ]

O. Ergincan, G. Palasantzas, and B. J. Kooi

Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands

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(Received 26 April 2010; accepted 27 April 2010; published online 1 June 2010)

Abstract unavailable.

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KEYWORDS and PACS

Keywords

cantilevers, elemental semiconductors, Poisson ratio, silicon, surface roughness

PACS

  • 99.10.Cd

    Errata

  • 62.20.dj

    Poisson's ratio

  • 68.35.B-

    Structure of clean surfaces (and surface reconstruction)

  • 68.47.Fg

    Semiconductor surfaces

  • 81.40.Jj

    Elasticity and anelasticity, stress-strain relations

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3442492

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

Figures (click on thumbnails to view enlargements)

FIG.2
Cantilever sensitivity T/T0 as a function of long wavelength roughness ratio w/ξ for w = 1 nm, different roughness exponents H, and Poisson ratio vL = 0.18 [corresponding to Si(111)]. The inset shows the dependence of the average local surface slope on the roughness ratio w/ξ for different roughness exponents H.

FIG.2 Download High Resolution Image (.zip file) | Export Figure to PowerPoint

FIG.3
Cantilever sensitivity T/T0 as a function of long wavelength roughness ratio w/ξ for w = 1 nm, H = 0.5, and two different Poisson ratios, vL = 0.18 [corresponding to Si(111)] and vL = 0.28 [corresponding to Si(100)]. The inset shows a typical gold rough surface deposited onto Si with H = 0.9, w = 7 nm, and ξ = 30 nm yielding w/ξ = 0.23.

FIG.3 Download High Resolution Image (.zip file) | Export Figure to PowerPoint



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