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31 May 2010

Volume 96, Issue 22, Articles (22xxxx)

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Appl. Phys. Lett. 96, 223101 (2010); http://dx.doi.org/10.1063/1.3439728 (3 pages)

Seokho Yun, Jeremy A. Bossard, Theresa S. Mayer, and Douglas H. Werner
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Kinetics of Ta ions penetration into porous low-k dielectrics under bias-temperature stress

Ming He, Ya Ou, Pei-I Wang, and Toh-Ming Lu

Appl. Phys. Lett. 96, 222901 (2010); http://dx.doi.org/10.1063/1.3442485 (3 pages) | Cited 4 times

Online Publication Date: 1 June 2010

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It is known that Ta, a popular diffusion barrier material, can itself penetrate into low-k dielectrics under bias-temperature stress. In this work, we derived a model which directly correlates the diffusivity of Ta ions to the rate of flatband voltage shift (FBS) of the Ta/methyl silsesquixane (MSQ)/Si capacitors. From our experimentally measured constant FBS rate, the Ta diffusivity and activation energy were determined. It appears that an increase in the porosity of MSQ film enhances the Ta diffusivity but does not affect the associated activation energy. This suggests the Ta ion diffusion is mainly through interconnected pore surfaces.
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84.32.Tt Capacitors

Improvement of memory performance by high temperature annealing of the Al2O3 blocking layer in a charge-trap type flash memory device

Jong Kyung Park, Youngmin Park, Sung Kyu Lim, Jae Sub Oh, Moon Sig Joo, Kwon Hong, and Byung Jin Cho

Appl. Phys. Lett. 96, 222902 (2010); http://dx.doi.org/10.1063/1.3442502 (3 pages) | Cited 6 times

Online Publication Date: 1 June 2010

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The effect of postdeposition annealing (PDA) of the Al2O3 blocking layer in a charge-trap type memory device is investigated. Significant improvements are achieved by high temperature PDA at 1100 °C, achieving faster operation speed, good charge retention, and a wide program/erase window. Experimental evidence shows that the underlying mechanism is not the changes in the band gap of the crystallized Al2O3 but is due to the higher trap density in the Si3N4 trapping layer at a deeper energy level by the intermixing between Al2O3 and Si3N4. The reduced trapping efficiency of the annealed Al2O3 also helps improve the retention property.
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84.30.Sk Pulse and digital circuits
61.72.Cc Kinetics of defect formation and annealing

Ferroelectric transition of Aurivillius compounds Bi5Ti3FeO15 and Bi6Ti3Fe2O18

J.-B. Li, Y. P. Huang, G. H. Rao, G. Y. Liu, J. Luo, J. R. Chen, and J. K. Liang

Appl. Phys. Lett. 96, 222903 (2010); http://dx.doi.org/10.1063/1.3447372 (3 pages) | Cited 11 times

Online Publication Date: 2 June 2010

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Single-phase Bi5Ti3FeO15 and Bi6Ti3Fe2O18 ceramics have been synthesized by solid state reaction. The ferroelectric transition of the compounds was studied by differential scanning calorimetry, high-temperature x-ray diffraction, and temperature-dependent dielectric measurements. Two solid-state structural transitions were observed in both compounds, one is the orthorhombic↔tetragonal transition (ferroelectric transition) at 1021 K for Bi5Ti3FeO15 and 973 K for Bi6Ti3Fe2O18, and the other is accompanied by an abrupt lattice expansion of the tetragonal phase at about 1110 K for Bi5Ti3FeO15 and about 1090 K for Bi6Ti3Fe2O18.
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87.85.J- Biomaterials
77.80.B- Phase transitions and Curie point

Ferroelectric Q-phase in a NaNbO3 epitaxial thin film

Yu. I. Yuzyuk, R. A. Shakhovoy, S. I. Raevskaya, I. P. Raevski, M. El Marssi, M. G. Karkut, and P. Simon

Appl. Phys. Lett. 96, 222904 (2010); http://dx.doi.org/10.1063/1.3437090 (3 pages) | Cited 6 times

Online Publication Date: 3 June 2010

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Epitaxial NaNbO3 thin films have been grown by pulsed laser deposition on cubic (00l) MgO substrate with epitaxial (La0.5Sr0.5)CoO3 buffer layer. Micro-Raman spectroscopy studies revealed that the ferroelectric Q phase (Pmc21, Z = 4) is stable in a 250-nm-thick film in contrast to the antiferroelectric phase P (Pbma, Z = 8) known to exist in the bulk single crystals and ceramics of undoped stoichiometric NaNbO3. Temperature-dependent Raman spectra indicate that the Q phase is stable over a wide temperature range (at least from 80 to 600 K), while the low-temperature ferroelectric rhombohedral phase N, typical for NaNbO3 single crystals, is not observed.
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77.80.-e Ferroelectricity and antiferroelectricity
77.55.fj Niobate- and tantalate-based films
78.30.Hv Other nonmetallic inorganics

Hierarchical domains in Na1/2Bi1/2TiO3 single crystals: Ferroelectric phase transformations within the geometrical restrictions of a ferroelastic inheritance

Jianjun Yao, Wenwei Ge, Liang Luo, Jiefang Li, D. Viehland, and Haosu Luo

Appl. Phys. Lett. 96, 222905 (2010); http://dx.doi.org/10.1063/1.3443717 (3 pages) | Cited 18 times

Online Publication Date: 3 June 2010

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We have found unique hierarchical domains in Na1/2Bi1/2TiO3 single crystals. A tetragonal ferroelastic domain structure is unchanged on cooling from 520 to 25 °C. Polar microdomains then nucleated on cooling in the rhombohedral ferroelectric phase within the geometrical restrictions imposed by the inherited ferroelastic domains.
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77.80.B- Phase transitions and Curie point
64.60.qj Studies of nucleation in specific substances
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
81.40.Jj Elasticity and anelasticity, stress-strain relations
62.20.fg Shape-memory effect; yield stress; superelasticity

Electromechanical probing of ionic currents in energy storage materials

A. N. Morozovska, E. A. Eliseev, and S. V. Kalinin

Appl. Phys. Lett. 96, 222906 (2010); http://dx.doi.org/10.1063/1.3446838 (3 pages) | Cited 16 times

Online Publication Date: 4 June 2010

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The electrochemical processes in energy storage materials are generally linked with changes of molar volume of the host compound. Here, the frequency dependent strain response of one-dimensional electrochemically active system to periodic electric bias is analyzed. The sensitivity and resolution of electrochemical strain measurements are compared to the current-based electrochemical impedance spectroscopy. The resolution and detection limits of interferometric and atomic force microscopy based systems for probing electrochemical reactions on the nanoscale are analyzed.
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07.78.+s Electron, positron, and ion microscopes; electron diffractometers
82.80.Kq Energy-conversion spectro-analytical methods (e.g., photoacoustic, photothermal, and optogalvanic spectroscopic methods)
81.16.Ta Atom manipulation
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