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31 May 2010

Volume 96, Issue 22, Articles (22xxxx)

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Appl. Phys. Lett. 96, 223101 (2010); http://dx.doi.org/10.1063/1.3439728 (3 pages)

Seokho Yun, Jeremy A. Bossard, Theresa S. Mayer, and Douglas H. Werner
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Scatterer induced mode splitting in poly(dimethylsiloxane) coated microresonators

Lina He, Sahin Kaya Ozdemir, Jiangang Zhu, and Lan Yang

Appl. Phys. Lett. 96, 221101 (2010); http://dx.doi.org/10.1063/1.3435480 (3 pages) | Cited 5 times

Online Publication Date: 1 June 2010

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We investigate scatterer induced mode splitting in a composite microtoroidal resonator (Q ∼ 106) fabricated by coating a silica microtoroid (Q ∼ 107) with a thin poly(dimethylsiloxane) layer. We show that the two split modes in both coated and uncoated silica microtoroids respond in the same way to the changes in the environmental temperature. This provides a self-referencing scheme which is robust to temperature perturbations. Together with the versatile functionalities of polymer materials, mode splitting in polymer and polymer coated microresonators offers an attractive sensing platform that is robust to thermal noise.
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68.55.-a Thin film structure and morphology
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

Strong coupling in a quantum dot micropillar system under electrical current injection

C. Kistner, K. Morgener, S. Reitzenstein, C. Schneider, S. Höfling, L. Worschech, A. Forchel, P. Yao, and S. Hughes

Appl. Phys. Lett. 96, 221102 (2010); http://dx.doi.org/10.1063/1.3442912 (3 pages) | Cited 1 time

Online Publication Date: 1 June 2010

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Integrating In0.3Ga0.7As quantum dots (QDs) featuring a high oscillator strength into a high quality electrically contacted micropillar cavity enabled us to realize strong coupling under electrical carrier injection. In the micropillar cavity with a quality factor of 10 000 and a diameter of 1.9 μm, a vacuum Rabi splitting of 108 μeV was observed when an electrically excited QD exciton was tuned through resonance with the fundamental cavity mode by varying the temperature.
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73.63.Kv Quantum dots
78.67.Hc Quantum dots
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
73.21.La Quantum dots

Optical performance of single-mode hybrid dielectric-loaded plasmonic waveguide-based components

Hong-Son Chu, Er-Ping Li, Ping Bai, and Ravi Hegde

Appl. Phys. Lett. 96, 221103 (2010); http://dx.doi.org/10.1063/1.3437088 (3 pages) | Cited 18 times

Online Publication Date: 2 June 2010

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The single mode hybrid dielectric-loaded plasmonic waveguide is presented at the wavelength of 1.55 μm. We show that this waveguiding structure, consisting of a low-index SiO2-stripe sandwiched between a high-index Si-nanowire and a silver film, achieves both long propagation length and strong field confinement with high power intensity. Components such as 90°-circular and S-shaped bends, based on the proposed waveguide with an intensity confinement area of 50×200 nm2, can obtain a total transmission efficiency exceeding 85% for various bend radii. Finally, we demonstrate that the efficient directional couplers can be developed using two coupled waveguides. In particular, we determine the typical coupling lengths and maximum transfer power for different structural parameters of the coupler. These investigations provide the foundations for the design of chip-scale integrated plasmonic circuitry.
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42.82.Et Waveguides, couplers, and arrays
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.79.Gn Optical waveguides and couplers

Free-standing subwavelength metallic gratings for snapshot multispectral imaging

Riad Haïdar, Grégory Vincent, Stéphane Collin, Nathalie Bardou, Nicolas Guérineau, Joël Deschamps, and Jean-Luc Pelouard

Appl. Phys. Lett. 96, 221104 (2010); http://dx.doi.org/10.1063/1.3442487 (3 pages) | Cited 7 times

Online Publication Date: 2 June 2010

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A mosaic of ten spectral filters has been fabricated in a single 20 mm2 membrane drilled by nanoslits and coated by a gold layer. The nanostructured core-shell gratings exhibit 70% average maximum transmission efficiency in 15% aperture area, which represents a fivefold enhancement compared to the geometrical transmission. This mosaic of bandpass filters regularly spaced in the 3–5 μm wavelength range is used to demonstrate real-time spectral imaging in a multichannel camera.
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42.79.Ls Scanners, image intensifiers, and image converters
42.79.Dj Gratings
42.79.Ci Filters, zone plates, and polarizers
42.86.+b Optical workshop techniques

Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer

Suk Choi, Hee Jin Kim, Seong-Soo Kim, Jianping Liu, Jeomoh Kim, Jae-Hyun Ryou, Russell D. Dupuis, Alec M. Fischer, and Fernando A. Ponce

Appl. Phys. Lett. 96, 221105 (2010); http://dx.doi.org/10.1063/1.3441373 (3 pages) | Cited 35 times

Online Publication Date: 3 June 2010

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InAlN electron-blocking layers (EBLs) are shown to improve the emission intensity and to mitigate the efficiency droop problem in III-nitride-based visible light-emitting diodes (LEDs). Using an In0.18Al0.82N EBL in blue LEDs, we have achieved a significant improvement in the electroluminescence emission intensity and a mitigated efficiency droop compared to similar LEDs without an EBL or with an Al0.2Ga0.8N EBL. This indicates that an In0.18Al0.82N EBL is more effective in electron confinement and reduces the efficiency droop possibly caused by carrier spill-over than conventional AlGaN EBLs.
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85.60.Jb Light-emitting devices
85.60.-q Optoelectronic devices
78.66.Fd III-V semiconductors
78.60.Fi Electroluminescence
85.30.De Semiconductor-device characterization, design, and modeling
81.05.Ea III-V semiconductors

Density-activated defect recombination as a possible explanation for the efficiency droop in GaN-based diodes

J. Hader, J. V. Moloney, and S. W. Koch

Appl. Phys. Lett. 96, 221106 (2010); http://dx.doi.org/10.1063/1.3446889 (3 pages) | Cited 36 times

Online Publication Date: 3 June 2010

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It is shown that a carrier loss process modeling density-activated defect recombination can reproduce the experimentally observed droop of the internal quantum efficiency in GaN-based laser diodes.
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42.55.Px Semiconductor lasers; laser diodes
81.05.Ea III-V semiconductors

Highly efficient Brillouin amplification of strong Stokes seed

Qi Guo, Zhiwei Lu, and Yulei Wang

Appl. Phys. Lett. 96, 221107 (2010); http://dx.doi.org/10.1063/1.3435385 (3 pages) | Cited 3 times

Online Publication Date: 3 June 2010

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Brillouin amplification of strong Stokes seed, which can achieve the output energy of 400 mJ and amplified efficiency of about 85% under the condition that the energy of Stokes beam and pump beam is in the ratio of 39.5/1, is reported. The relationship between output energy of strong signal Brillouin amplification and the energy of Stokes beam as well as pump beam, the interaction length, absorption coefficient is investigated. The design of strong signal Brillouin amplification system with high output energy is also provided.
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42.55.Wd Fiber lasers
78.60.-b Other luminescence and radiative recombination

Optical chirality of bacteriorhodopsin films via second harmonic Maker’s fringes measurements

M. C. Larciprete, A. Belardini, C. Sibilia, M.-b. Saab, G. Váró, and C. Gergely

Appl. Phys. Lett. 96, 221108 (2010); http://dx.doi.org/10.1063/1.3442503 (3 pages) | Cited 2 times

Online Publication Date: 3 June 2010

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We experimentally investigated second harmonic generation from an oriented multilayer film of bacteriorhodopsin protein, deposited onto a charged surface. The generated signal is obtained as a function of incidence angle, at different polarization state of both fundamental and generated beams. We show that the measurements, together with the analytical curves, allow to retrieve the nonvanishing elements of the nonlinear optical tensor, including the ones introduced by optical chirality.
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87.16.Nn Motor proteins (myosin, kinesin dynein)
42.65.An Optical susceptibility, hyperpolarizability
43.25.-x Nonlinear acoustics
33.15.Bh General molecular conformation and symmetry; stereochemistry
36.20.-r Macromolecules and polymer molecules
87.15.-v Biomolecules: structure and physical properties

Enhanced telecom wavelength single-photon detection with NbTiN superconducting nanowires on oxidized silicon

M. G. Tanner, C. M. Natarajan, V. K. Pottapenjara, J. A. O’Connor, R. J. Warburton, R. H. Hadfield, B. Baek, S. Nam, S. N. Dorenbos, E. Bermúdez Ureña, T. Zijlstra, T. M. Klapwijk, and V. Zwiller

Appl. Phys. Lett. 96, 221109 (2010); http://dx.doi.org/10.1063/1.3428960 (3 pages) | Cited 23 times

Online Publication Date: 3 June 2010

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Superconducting nanowire single-photon detectors (SNSPDs) have emerged as a highly promising infrared single-photon detector technology. Next-generation devices are being developed with enhanced detection efficiency (DE) at key technological wavelengths via the use of optical cavities. Furthermore, new materials and substrates are being explored for improved fabrication versatility, higher DE, and lower dark counts. We report on the practical performance of packaged NbTiN SNSPDs fabricated on oxidized silicon substrates in the wavelength range from 830 to 1700 nm. We exploit constructive interference from the SiO2/Si interface in order to achieve enhanced front-side fiber-coupled DE of 23.2 % at 1310 nm, at 1 kHz dark count rate, with 60 ps full width half maximum timing jitter.
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85.25.Pb Superconducting infrared, submillimeter and millimeter wave detectors
07.57.Kp Bolometers; infrared, submillimeter wave, microwave, and radiowave receivers and detectors
85.60.Gz Photodetectors (including infrared and CCD detectors)

Surface 210 nm light emission from an AlN p–n junction light-emitting diode enhanced by A-plane growth orientation

Yoshitaka Taniyasu and Makoto Kasu

Appl. Phys. Lett. 96, 221110 (2010); http://dx.doi.org/10.1063/1.3446834 (3 pages) | Cited 10 times

Online Publication Date: 4 June 2010

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(11math0) A-plane AlN p–n junction light-emitting diode (LED) with a wavelength of 210 nm is demonstrated. The electroluminescence from the A-plane LED is inherently polarized for the electric field parallel to the [0001] c-axis due to a negative crystal-field splitting energy. The polarization ratio (electric-field component ratio of parallel and perpendicular to c-axis) is as high as 0.9. The radiation pattern of the A-plane LED shows higher emission intensity along the surface normal, while that of a conventional (0001) C-plane LED shows lower emission intensity along the surface normal. The different radiation patterns can be explained by the polarization property.
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85.60.Jb Light-emitting devices
78.60.Fi Electroluminescence

Observations of temporal group delays in slow-light multiple coupled photonic crystal cavities

S. Kocaman, X. Yang, J. F. McMillan, M. B. Yu, D. L. Kwong, and C. W. Wong

Appl. Phys. Lett. 96, 221111 (2010); http://dx.doi.org/10.1063/1.3446893 (3 pages) | Cited 6 times

Online Publication Date: 4 June 2010

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We demonstrate temporal group delays in coherently coupled high-Q multicavity photonic crystals, in an all-optical analog to electromagnetically induced transparency. We report deterministic control of the group delay up to 4× the single cavity lifetime in our room-temperature chip. Supported by three-dimensional numerical simulations and theoretical analyses, our multipump beam approach enables control of the multicavity resonances and intercavity phase, in both single and double transparency peaks. The standing-wave wavelength-scale photon localization allows direct scalability for chip-scale optical pulse trapping and coupled-cavity quantum electrodynamics.
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42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.50.Gy Effects of atomic coherence on propagation, absorption, and amplification of light; electromagnetically induced transparency and absorption
42.70.Qs Photonic bandgap materials

Upper limit for the modulation bandwidth of a quantum dot laser

Levon V. Asryan and Robert A. Suris

Appl. Phys. Lett. 96, 221112 (2010); http://dx.doi.org/10.1063/1.3446968 (3 pages) | Cited 7 times

Online Publication Date: 4 June 2010

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We derive a closed-form expression for the upper limit for the modulation bandwidth of a semiconductor quantum dot (QD) laser. The highest possible bandwidth increases directly with overlap integral of the electron and hole wave functions in a QD, number of QD-layers, and surface density of QDs in a layer, and is inversely proportional to the inhomogeneous line broadening caused by the QD-size dispersion. At 10% QD-size fluctuations and 100% overlap, the upper limit for the modulation bandwidth in a single QD-layer laser can be as high as 60 GHz.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Fc Modulation, tuning, and mode locking
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