APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Applied Physics Letters / Volume 96 / Issue 23 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 96, 231113 (2010); http://dx.doi.org/10.1063/1.3443719 (3 pages)

Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes

R. M. Farrell1, P. S. Hsu2, D. A. Haeger2, K. Fujito3, S. P. DenBaars1,2, J. S. Speck2, and S. Nakamura1,2

1Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA
2Materials Department, University of California, Santa Barbara, California 93106, USA
3Optoelectronics Laboratory, Mitsubishi Chemical Corporation, 1000 Higashi-Mamiana, Ushiku, Ibaraki 300-1295, Japan

View MapView Map

(Received 7 April 2010; accepted 13 May 2010; published online 10 June 2010)

We demonstrate AlGaN-cladding-free m-plane InGaN/GaN laser diodes with threshold current densities that are comparable to state-of-the-art c-plane InGaN/GaN laser diodes. Thick InGaN waveguiding layers and a relatively wide active region with three 8 nm quantum wells were used to provide adequate refractive index contrast with the GaN cladding layers, thus eliminating the need for AlGaN cladding layers. Despite the large active region volume, lasing was achieved at a threshold current density of 1.54 kA/cm2, suggesting that the realization of even lower threshold current densities should be possible by reducing the number of quantum wells in the active region.

© 2010 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

aluminium compounds, current density, gallium compounds, III-V semiconductors, indium compounds, optical fibre cladding, optical waveguides, refractive index, semiconductor lasers, semiconductor quantum wells, wide band gap semiconductors

PACS

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3443719

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    S. Chichibu, T. Azuhata, T. Sota, and S. Nakamura, Appl. Phys. Lett. 69, 4188 (1996)APPLAB000069000027004188000001.

    S. H. Park and D. Ahn, Appl. Phys. Lett. 90, 013505 (2007)APPLAB000090000001013505000001.

    K. Okamoto, J. Kashiwagi, T. Tanaka, and M. Kubota, Appl. Phys. Lett. 94, 071105 (2009)APPLAB000094000007071105000001.

    M. J. Bergmann and H. C. Casey, J. Appl. Phys. 84, 1196 (1998)JAPIAU000084000003001196000001.

    S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, Appl. Phys. Lett. 69, 3034 (1996)APPLAB000069000020003034000001.

    S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto, and H. Kiyoku, Appl. Phys. Lett. 69, 4056 (1996)APPLAB000069000026004056000001.


For access to citing articles, you need to log in.


Figures (3)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Low-threshold-current-density AlGaN-cladding-free m-plane InGaN/GaN laser diodes
  2. Erratum: “Influence of random roughness on cantilever curvature sensitivity” [ Appl. Phys. Lett. 96, 041912 (2010) ]
  3. Response to “Comment on ‘Influence of random roughness on cantilever curvature sensitivity’ ” [ Appl. Phys. Lett. 96, 226101 (2010) ]
  4. Comment on “Influence of random roughness on cantilever curvature sensitivity” [ Appl. Phys. Lett. 96, 041912 (2010) ]
  5. Hydrodynamic trap for single particles and cells
Go to AIP Home
Copyright © American Institute of Physics
close