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7 Jun 2010

Volume 96, Issue 23, Articles (23xxxx)

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Appl. Phys. Lett. 96, 231104 (2010); http://dx.doi.org/10.1063/1.3443734 (3 pages)

Hiroto Sekiguchi, Katsumi Kishino, and Akihiko Kikuchi
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Correlation of band edge native defect state evolution to bulk mobility changes in ZnO thin films

Hyungtak Seo, Chan-Jun Park, Young-Je Cho, Young-Bae Kim, and Duck-Kyun Choi

Appl. Phys. Lett. 96, 232101 (2010); http://dx.doi.org/10.1063/1.3424790 (3 pages) | Cited 8 times

Online Publication Date: 7 June 2010

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The evolution of native defect states near conduction band present in ZnO thin films is correlated with the bulk electron density and mobility changes driven by the thermal structure modification. The evolution of band edge electronic structures of ZnO thin films was studied via the spectroscopic detection of empty localized defect states in conduction band (CB) edge and occupied defect states in valence band using spectroscopic ellipsometry and x-ray photoemission spectroscopy. The energy depth of native defect states against CB edge revealed the direct correlation to Hall mobility values for ZnO thin films.
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71.55.Gs II-VI semiconductors
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
71.20.Nr Semiconductor compounds
79.60.Bm Clean metal, semiconductor, and insulator surfaces
73.61.Ga II-VI semiconductors

Small gap semiconducting organic charge-transfer interfaces

M. Nakano, H. Alves, A. S. Molinari, S. Ono, N. Minder, and A. F. Morpurgo

Appl. Phys. Lett. 96, 232102 (2010); http://dx.doi.org/10.1063/1.3449558 (3 pages) | Cited 4 times

Online Publication Date: 8 June 2010

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We investigated transport properties of organic heterointerfaces formed by single-crystals of two organic donor-acceptor molecules, tetramethyltetraselenafulvalene and 7,7,8,8-tetracyanoquinodimethane (TCNQ). Whereas the individual crystals have unmeasurably high resistance, the interface exhibits a resistivity of few tens of megohm with a temperature dependence characteristic of a small gap semiconductor. We analyze the transport properties based on a simple band diagram that naturally accounts for our observations in terms of charge transfer between two crystals. Together with the recently discovered tetrathiafulvalene–TCNQ interfaces, these results indicate that single-crystal organic heterostructures create functional electronic systems with properties relevant to both fundamental and applied fields.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Retardation of electromigration-induced Ni(P) consumption by an electroless Pd insertion layer

C. T. Lu, H. W. Tseng, C. H. Chang, T. S. Huang, and C. Y. Liu

Appl. Phys. Lett. 96, 232103 (2010); http://dx.doi.org/10.1063/1.3449119 (3 pages) | Cited 6 times

Online Publication Date: 8 June 2010

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In this study, Ni(P) bond pads joined with Sn solder bumps were stressed with a high current density of 104 A/cm2. Serious electromigration-induced Ni(P) consumption and unusual EM-enhanced diffusion of the interfacial Ni3Sn4 compound layer are observed. However the observed EM-induced Ni(P) consumption and EM-enhanced diffusion of the interfacial Ni3Sn4 compound layer can be effectively retarded by introducing an additional electroless Pd layer on the Ni(P) layer. The improvement in EM resistance due to the Pd layer can be attributed to PdSn4 formation and Pd solutes in the interfacial Ni3Sn4 layer.
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66.30.Qa Electromigration

Suppression of thermal broadening via Zener tunneling in narrow-gap semiconductor double-quantum-wire structures

Ioanna Kyriakou, John H. Jefferson, and Colin J. Lambert

Appl. Phys. Lett. 96, 232104 (2010); http://dx.doi.org/10.1063/1.3436725 (3 pages)

Online Publication Date: 9 June 2010

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Zener interband tunneling through a potential profile induced by two top gates in the plane of the two-dimensional electron gas (2DEG) of a doped narrow-gap quantum well system is studied when the gates are biased differently. In contrast to the case of resonant transport through a potential profile created by a single gate these resonances exhibit only a weak dependence on temperature. We present results for a system based on an InSb quantum well and show that narrow resonances are maintained up to room temperature. Such narrow resonances may be exploited for voltage sensing at elevated temperatures.
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72.20.Ht High-field and nonlinear effects
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
73.63.Nm Quantum wires
73.63.Hs Quantum wells

Evolution of phase separation in In-rich InGaN alloys

B. N. Pantha, J. Li, J. Y. Lin, and H. X. Jiang

Appl. Phys. Lett. 96, 232105 (2010); http://dx.doi.org/10.1063/1.3453563 (3 pages) | Cited 7 times

Online Publication Date: 11 June 2010

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Evolution of phase separation in InxGa1−xN alloys (x ∼ 0.65) grown on AlN/sapphire templates by metal organic chemical vapor deposition has been probed. It was found that growth rate, GR, is a key parameter and must be high enough (>0.5 μm/h) in order to grow homogeneous and single phase InGaN alloys. Our results implied that conditions far from thermodynamic equilibrium are needed to suppress phase separation. Both structural and electrical properties were found to improve significantly with increasing GR. The improvement in material quality is attributed to the suppression of phase separation with higher GR. The maximum thickness of the single phase epilayer tmax (i.e., maximum thickness that can be grown without phase separation) was determined via in situ interference pattern monitoring and found to be a function of GR. As GR increases, tmax also increases. The maximum value of tmax for In0.65Ga0.35N alloy was found to be ∼ 1.1 μm at GR>1.8 μm/h.
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64.75.Qr Phase separation and segregation in semiconductors
81.05.-t Specific materials: fabrication, treatment, testing, and analysis
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.Ea III-V semiconductors

Effect of humidity on hydrogen sensitivity of Pt-gated AlGaN/GaN high electron mobility transistor based sensors

C. F. Lo, C. Y. Chang, B. H. Chu, S. J. Pearton, A. Dabiran, P. P. Chow, and F. Ren

Appl. Phys. Lett. 96, 232106 (2010); http://dx.doi.org/10.1063/1.3454279 (3 pages) | Cited 6 times

Online Publication Date: 11 June 2010

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The effects of relative humidity on sensing characteristics of Pt-gated AlGaN/GaN high electron mobility transistor diode based hydrogen sensors were investigated. The absorbed water and oxygen molecules blocked available Pt surface adsorption sites for H2 absorption and reduced the hydrogen sensing sensitivity compared to low humidity conditions. The hydrogen sensing sensitivity decreased proportional to the relative humidity. However, the presence of humidity improved the sensor recovery characteristics after exposure to the hydrogen ambient.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
85.30.Tv Field effect devices
85.30.Kk Junction diodes
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