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7 Jun 2010

Volume 96, Issue 23, Articles (23xxxx)

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Appl. Phys. Lett. 96, 231104 (2010); http://dx.doi.org/10.1063/1.3443734 (3 pages)

Hiroto Sekiguchi, Katsumi Kishino, and Akihiko Kikuchi
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Contactless measurements of charge migration within single molecules

Kiyonobu Nagaya, Hiroshi Iwayama, Akinori Sugishima, Yoshinori Ohmasa, and Makoto Yao

Appl. Phys. Lett. 96, 233101 (2010); http://dx.doi.org/10.1063/1.3442483 (3 pages) | Cited 1 time

Online Publication Date: 7 June 2010

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Contactless measurements of charge migration were carried out for three π-conjugated molecules in each of which a bromine atom and an oxygen atom are located on the opposite sides of the aromatic ring. A core hole was generated selectively in the Br atom by x-ray absorption, followed by the Auger cascade, and the subsequent charge migration within the molecule was examined by detecting an O+ ion by means of the coincidence momentum imaging measurements.
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34.70.+e Charge transfer
32.80.Hd Auger effect (including Coster-Krönig transitions)
33.15.Bh General molecular conformation and symmetry; stereochemistry
33.15.Dj Interatomic distances and angles

Tunable optical features from self-organized rhodium nanostructures

Bhaskar R. Sathe, Beena K. Balan, and Vijayamohanan K. Pillai

Appl. Phys. Lett. 96, 233102 (2010); http://dx.doi.org/10.1063/1.3447927 (3 pages) | Cited 2 times

Online Publication Date: 7 June 2010

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Manipulating the surface to tune plasmonic emission is an exciting fundamental challenge and here we report on the development of unique morphology-dependant optical features of Rh nanostructures prepared by an equilibrium procedure. The emergence of surface plasmon peaks at 375 nm and 474 nm, respectively, is ascribed to truncated and smooth surface of nanospheres in contrast to the absence of surface plasmon for bulk Rh(0) in the visible range. Smaller sized, high surface area domains with well developed, faceted organization are responsible for the promising characteristics of these Rh nanospheres which might be especially useful for potential catalytic, field emission and magnetic applications.
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78.67.-n Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
61.46.-w Structure of nanoscale materials
73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Ni endohedral-doped C60 with duality of magnetic moments

J. L. Li and G. W. Yang

Appl. Phys. Lett. 96, 233103 (2010); http://dx.doi.org/10.1063/1.3447934 (3 pages)

Online Publication Date: 7 June 2010

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We have performed the magnetic properties of Ni endohedral-doped C60 (Ni@C60) by the spin-polarized density functional calculations, and showed that there are three stable configurations depending on different sites of the doped Ni atoms. Due to the high hybridization and confinement effects, the magnetic moment of the Ni-encapsulated metallofullerenes has duality, i.e., altering between 2.02μB and zero, by positioning the Ni atom in the hollow cage of C60. These findings of the alternative magnetic moments of the Ni-encapsulated C60 implied that Ni@C60 could be expected to be promising as a single molecular magnetic switch.
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75.60.-d Domain effects, magnetization curves, and hysteresis
75.30.Cr Saturation moments and magnetic susceptibilities
75.76.+j Spin transport effects

Near-field light detection by conservative and dissipative force modulation methods using a piezoelectric cantilever

Nobuo Satoh,  Takeshi Fukuma,  Kei Kobayashi,  Shunji Watanabe,  Toru Fujii, Kazumi Matsushige, and Hirofumi Yamada

Appl. Phys. Lett. 96, 233104 (2010); http://dx.doi.org/10.1063/1.3449131 (3 pages) | Cited 1 time

Online Publication Date: 7 June 2010

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We demonstrated near-field light detection by dynamic force microscope using a self-sensing piezoelectric cantilever having a lead zirconate titanate thin film layer. The cantilever tip was brought close to a glass plate with a patterned chromium film on a right angle prism. The backside of the prism was irradiated by an intensity modulated laser light to create an evanescent field at the glass surface. We obtained near-field optical images of the patterned glass by detecting the frequency shift modulation or the amplitude modulation induced by the near-field light while the tip-sample distance was regulated by the frequency modulation method in ambient condition.
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85.50.-n Dielectric, ferroelectric, and piezoelectric devices

UV-Raman imaging of the in-plane strain in single ultrathin strained silicon-on-insulator patterned structure

O. Moutanabbir, M. Reiche, A. Hähnel, W. Erfurth, M. Motohashi, A. Tarun, N. Hayazawa, and S. Kawata

Appl. Phys. Lett. 96, 233105 (2010); http://dx.doi.org/10.1063/1.3449135 (3 pages) | Cited 9 times

Online Publication Date: 7 June 2010

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Confocal UV-Raman with glycerin-immersed high numerical aperture objective lens was used to probe the local strain in individual strained Si structures. The investigated structures were fabricated from 15 nm thick strained silicon-on-insulator substrates with a tensile strain of 0.8%. Two-dimensional maps of the postpatterning strain were obtained for single structures with lateral dimension of 500 nm. We found that the strain measured at the center partially relaxes and drops to 0.67% as a result of patterning-induced free surfaces. This relaxation increases toward the edges following nearly a parabolic behavior. A different strain behavior was observed for larger structures.
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78.30.Hv Other nonmetallic inorganics
78.40.Ha Other nonmetallic inorganics

Thermal conductivities of Si1−xGex nanowires with different germanium concentrations and diameters

Hyoungjoon Kim, Ilsoo Kim, Heon-jin Choi, and Woochul Kim

Appl. Phys. Lett. 96, 233106 (2010); http://dx.doi.org/10.1063/1.3443707 (3 pages) | Cited 8 times

Online Publication Date: 8 June 2010

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The thermal conductivities of Si1−xGex nanowires (NWs) synthesized with Ge concentrations of 0.0%, 0.4%, 4%, and 9% and different diameters were measured from 40 to 420 K. The thermal conductivity of Si1−xGex NWs decreases as the Ge concentration increases due to alloy scattering. As the diameter of the Si1−xGex NWs decreases, the thermal conductivity decreases due to phonon boundary scattering. However, the thermal conductivity dependency on the diameter of the NWs is not significant. This indicates that alloy scattering should be the dominant scattering mechanism in Si1−xGex NWs. This study should provide a basis for designing efficient thermoelectric devices out of Si1−xGex NWs and Si1−xGex nanocomposites.
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66.70.-f Nonelectronic thermal conduction and heat-pulse propagation in solids; thermal waves
61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)

Enhancing the performance of quantum dots sensitized solar cell by SiO2 surface coating

Zhifu Liu, Masahiro Miyauchi, Yu Uemura, Yan Cui, Kohjiro Hara, Zhigang Zhao, Kenji Sunahara, and Akihiro Furube

Appl. Phys. Lett. 96, 233107 (2010); http://dx.doi.org/10.1063/1.3447356 (3 pages) | Cited 21 times

Online Publication Date: 8 June 2010

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This letter reports enhanced performance of quantum dots sensitized solar cells by selectively deposition an insulating SiO2 layer over the quantum dots (QDs) sensitized mesoporous TiO2 photoanode. The incident photon to current conversion efficiency of the CdS/CdSe QDs cosensitized solar cell with SiO2 coating can reach 83%. A power conversion efficiency of 2.05% was obtained.
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88.40.H- Solar cells (photovoltaics)
81.05.Dz II-VI semiconductors
73.61.Ga II-VI semiconductors
72.80.Ey III-V and II-VI semiconductors
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
73.61.Ng Insulators

Electrically reconfigurable nanophotonic hybrid grating lens array

Ranjith Rajasekharan, Christoph Bay, Qing Dai, Jon Freeman, and Timothy D. Wilkinson

Appl. Phys. Lett. 96, 233108 (2010); http://dx.doi.org/10.1063/1.3449130 (3 pages) | Cited 5 times

Online Publication Date: 8 June 2010

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We demonstrate a switchable hybrid grating lens array using a nanophotonic device fabricated from multiwall carbon nanotubes and liquid crystals which combines diffraction, lensing, and dispersion. Diffraction experiments and computer simulations both show clear and well defined diffraction orders in two dimensions with voltage dependent diffraction efficiency. These characteristics enable the device to be used in the fabrication of miniaturized spectrometers and integrated optics.
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42.82.Cr Fabrication techniques; lithography, pattern transfer
42.82.Et Waveguides, couplers, and arrays
42.79.Bh Lenses, prisms and mirrors
42.79.Kr Display devices, liquid-crystal devices
42.79.Dj Gratings

Alternating current-to-direct current power conversion by single-wall carbon nanotube diodes

Govind Mallick, Mark H. Griep, Pulickel M. Ajayan, and Shashi P. Karna

Appl. Phys. Lett. 96, 233109 (2010); http://dx.doi.org/10.1063/1.3429587 (3 pages)

Online Publication Date: 9 June 2010

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We report the observation of alternating current-to-direct current half-wave conversion in the range of 1–1000 Hz by single-wall carbon nanotube diode rectifiers, which show a high degree of rectification ( ∼ 105). The nanoscale diode rectifier demonstrates a half-wave power conversion efficiency of 20%, which is comparable to that reported for larger metal oxide semiconductor field effect transistor diode designs.
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85.35.Kt Nanotube devices
84.30.Jc Power electronics; power supply circuits

Strain-mediated metal-insulator transition in epitaxial ultrathin films of NdNiO3

Jian Liu, M. Kareev, B. Gray, J. W. Kim, P. Ryan, B. Dabrowski, J. W. Freeland, and J. Chakhalian

Appl. Phys. Lett. 96, 233110 (2010); http://dx.doi.org/10.1063/1.3451462 (3 pages) | Cited 6 times

Online Publication Date: 9 June 2010

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We have synthesized epitaxial NdNiO3 ultrathin films in a layer-by-layer growth mode under tensile and compressive strain on SrTiO3 (001) and LaAlO3 (001), respectively. A combination of x-ray diffraction, temperature dependent resistivity, and soft x-ray absorption spectroscopy has been applied to elucidate electronic and structural properties of the samples. In contrast to the bulk NdNiO3, the metal-insulator transition under compressive strain is found to be completely quenched, while the transition remains under the tensile strain albeit modified from the bulk behavior.
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71.30.+h Metal-insulator transitions and other electronic transitions
68.60.Bs Mechanical and acoustical properties
78.70.Dm X-ray absorption spectra

Work functions of capped (5, 5) and (9, 0) single-walled carbon nanotubes adsorbed with alkali-metal atoms

Shun-Fu Xu, Guang Yuan, Chun Li, Zhi-Jun Jia, and Hitenori Mimura

Appl. Phys. Lett. 96, 233111 (2010); http://dx.doi.org/10.1063/1.3449116 (3 pages) | Cited 5 times

Online Publication Date: 9 June 2010

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The influence of alkali metal (Li or Cs) adsorption on the work functions of capped (5, 5) and (9, 0) single-walled carbon nanotubes (CNTs) was investigated using first-principles calculations. After Cs adsorption, the decrease in the work functions of (5, 5) and (9, 0) CNTs was more pronounced than that of Li-adsorbed CNTs. The decline in the work functions was due to the increase in Fermi levels and the decrease in vacuum levels induced by electrons transfer from the alkali atom to the CNTs. A vacancy defect raised the work functions of the pristine and alkali-metal-adsorbed CNTs.
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73.22.-f Electronic structure of nanoscale materials and related systems
71.15.-m Methods of electronic structure calculations
73.20.At Surface states, band structure, electron density of states
71.20.Tx Fullerenes and related materials; intercalation compounds
68.43.Mn Adsorption kinetics

Surround-gated vertical nanowire quantum dots

M. H. M. van Weert, M. den Heijer, M. P. van Kouwen, R. E. Algra, E. P. A. M. Bakkers, L. P. Kouwenhoven, and V. Zwiller

Appl. Phys. Lett. 96, 233112 (2010); http://dx.doi.org/10.1063/1.3452346 (3 pages) | Cited 6 times

Online Publication Date: 11 June 2010

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We report voltage dependent photoluminescence experiments on single indium arsenide phosphide (InAsP) quantum dots embedded in vertical surround-gated indium phosphide (InP) nanowires. We show that by tuning the gate voltage, we can access different quantum dot charge states. We study the anisotropic exchange splitting by polarization analysis, and identify the neutral and singly charged exciton. These results are important for spin addressability in a charge tunable nanowire quantum dot.
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78.67.Hc Quantum dots
81.07.Ta Quantum dots
73.63.Kv Quantum dots
71.35.-y Excitons and related phenomena
78.55.Cr III-V semiconductors
73.21.La Quantum dots

Room temperature infrared photoresponse of self assembled Ge/Si (001) quantum dots grown by molecular beam epitaxy

R. K. Singha, S. Manna, S. Das, A. Dhar, and S. K. Ray

Appl. Phys. Lett. 96, 233113 (2010); http://dx.doi.org/10.1063/1.3446848 (3 pages) | Cited 4 times

Online Publication Date: 11 June 2010

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We report on the observation of intraband near infrared ( ∼ 3.1 μm) and mid infrared ( ∼ 6.2 μm) photocurrent response at room temperature using Ge/Si self-assembled quantum dots grown by molecular beam epitaxy. Due to the bimodal size distribution and SiGe intermixing, distinguishable photoluminescence transitions are observed at 10 K, below and above the optical band gap of bulk Ge. The observed redshift in photocurrent with increasing temperature has been explained by the excitonic electric field originated due to infrared excitation at low temperatures. A good correlation between the spectral photocurrent response and photoluminescence of the quantum dots has been established.
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81.07.Ta Quantum dots
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
81.16.Dn Self-assembly
72.40.+w Photoconduction and photovoltaic effects
79.60.Jv Interfaces; heterostructures; nanostructures
71.35.-y Excitons and related phenomena

Effect of an interface charge density wave on surface plasmon resonance in ZnO/Ag/ZnO thin films

Dongyan Zhang (张东岩), Pangpang Wang (王胖胖), Ri-ichi Murakami (村上理一), and Xiaoping Song (宋晓平)

Appl. Phys. Lett. 96, 233114 (2010); http://dx.doi.org/10.1063/1.3442916 (3 pages) | Cited 14 times

Online Publication Date: 11 June 2010

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The optical transmission spectra of ZnO/Ag/ZnO films showed a broad range of transmission enhancement due to a harmonic generated by surface plasmon resonance. This resonance was correlated with interface electrons between metallic Ag and dielectric ZnO layer. The interface charge density wave was calculated and compared with experimental results using Maxwell’s equations with a modified boundary condition. Finally, an observed redshift in the transmission enhancement is discussed using both the Ohmic contact model and the Drude free electron model.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
77.55.-g Dielectric thin films
78.67.Pt Multilayers; superlattices; photonic structures; metamaterials
71.45.Lr Charge-density-wave systems
77.84.Bw Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.

Controlled electronic transport in single-walled carbon nanotube networks: Selecting electron hopping and chemical doping mechanisms

Z. J. Han and K. Ostrikov

Appl. Phys. Lett. 96, 233115 (2010); http://dx.doi.org/10.1063/1.3449118 (3 pages) | Cited 10 times

Online Publication Date: 11 June 2010

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The electronic transport in both intrinsic and acid-treated single-walled carbon nanotube networks containing more than 90% semiconducting nanotubes is investigated using temperature-dependent resistance measurements. The semiconducting behavior observed in the intrinsic network is attributed to the three-dimensional electron hopping mechanism. In contrast, the chemical doping mechanism in the acid-treated network is found to be responsible for the revealed metal-like linear resistivity dependence in a broad temperature range. This effective method to control the electrical conductivity of single-walled carbon nanotube networks is promising for future nanoscale electronics, thermometry, and bolometry.
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72.20.Ee Mobility edges; hopping transport
72.80.Cw Elemental semiconductors
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