APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter iResearch App Facebook

BROWSE VOLUMES

Year Range: 
Search Issue | RSS Feeds RSS
Previous Issue Next Issue

7 Jun 2010

Volume 96, Issue 23, Articles (23xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 96, 231104 (2010); http://dx.doi.org/10.1063/1.3443734 (3 pages)

Hiroto Sekiguchi, Katsumi Kishino, and Akihiko Kikuchi
Enlarge Image | Read More
Return to All Sections
back to top
RSS Feeds
FREE

Memory mechanisms of vertical organic memory transistors

Li-Zhen Yu, Hung-Chun Chen, and Ching-Ting Lee

Appl. Phys. Lett. 96, 233301 (2010); http://dx.doi.org/10.1063/1.3449120 (3 pages) | Cited 3 times

Online Publication Date: 7 June 2010

Full Text: Read Online (HTML) | Download PDF

Show Abstract
Three-terminal vertical organic memory transistors were fabricated to investigate the memory mechanisms and the relation between memory behavior and applied electrical field. The 9,10-di(2-naphthyl)anthracene was used as the active channel layer for the organic memory transistors. In both the ON and OFF state of the organic memory transistors, the drain-source currents (IDS) were modulated by applying various gate-source voltages (VGS). The switching drain-source voltage (VDS) decreased with an increase in applied VGS voltages. The ON/OFF IDS current ratio of the organic memory transistors could be modulated up to the maximum value of 2.02×105 by applying VGS voltage bias.
Show PACS
81.05.Fb Organic semiconductors
85.30.-z Semiconductor devices
FREE

Control of the charge transport properties in a solution-processible ambipolar quinoidal oligothiophene derivative by direct laser writing

J. C. Ribierre, T. Fujihara, T. Muto, and T. Aoyama

Appl. Phys. Lett. 96, 233302 (2010); http://dx.doi.org/10.1063/1.3449121 (3 pages) | Cited 3 times

Online Publication Date: 9 June 2010

Full Text: Read Online (HTML) | Download PDF

Show Abstract
We investigate the effects of laser irradiation on the performance of organic field-effect transistors based on the solution-processible quinoidal oligothiophene [QQT(CN)4]. Whereas electron field-effect mobilities are not modified, hole transport can be selectively controlled and even suppressed depending on the laser irradiation conditions. Vertical p-n bipolar structures in QQT(CN)4 realized by direct laser writing are also studied. The results provide essential information for the effective laser patterning of complementary organic logic circuits and suggests the possibility to fabricate by direct laser writing complex three-dimensional bipolar p-n structures in a single QQT(CN)4 thin film.
Show PACS
85.30.Tv Field effect devices
85.30.De Semiconductor-device characterization, design, and modeling
Return to All Sections
Close

Google Calendar

ADVERTISEMENT

Go to AIP Home   © AIP Publishing LLC
close