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14 Jun 2010

Volume 96, Issue 24, Articles (24xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 96, 241101 (2010); http://dx.doi.org/10.1063/1.3449576 (3 pages)

Rui Chen, H. D. Sun, T. Wang, K. N. Hui, and H. W. Choi
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Optically pumped ultraviolet lasing from nitride nanopillars at room temperature

Rui Chen, H. D. Sun, T. Wang, K. N. Hui, and H. W. Choi

Appl. Phys. Lett. 96, 241101 (2010); http://dx.doi.org/10.1063/1.3449576 (3 pages) | Cited 12 times

Online Publication Date: 14 June 2010

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A vertical cavity structure composing of an in situ grown bottom AlxGa1−xN/AlyGa1−yN distributed Bragg reflector and a top SiO2/HfO2 dielectric mirror for ultraviolet (UV) emission has been demonstrated. Close-packed nanopillars with diameters of around 500 nm have been achieved by the route of nanosphere lithography combined with inductively-coupled plasma etching. Optically-pumped UV lasing at a wavelength of 343.7 nm (3.608 eV) was observed at room temperature, with a threshold excitation density of 0.52 MW/cm2. The mechanism of the lasing action is discussed in detail. Our investigation indicates promising possibilities in nitride-based resonant cavity devices, particularly toward realizing the UV nitride-based vertical-cavity surface-emitting laser.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.72.Bj Visible and ultraviolet sources
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Saturation of the Raman amplification by self-phase modulation in silicon nanowaveguides

Felix Kroeger, Aleksandr Ryasnyanskiy, Alexandre Baron, Nicolas Dubreuil, Philippe Delaye, Robert Frey, Gérald Roosen, and David Peyrade

Appl. Phys. Lett. 96, 241102 (2010); http://dx.doi.org/10.1063/1.3451466 (3 pages) | Cited 3 times

Online Publication Date: 14 June 2010

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We experimentally show that the self-phase modulation of picosecond pump pulses, induced by both the optical Kerr effect and free-carrier refraction, has a detrimental effect on the maximum on-off Raman gain achievable in silicon on insulator nanowaveguides, causing it to saturate. A simple calculation of the Raman gain coefficient from the measured broadened output pump spectra perfectly matches the saturated behavior of the amplified Raman signal observed experimentally at different input pump powers.
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42.82.Et Waveguides, couplers, and arrays
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering

Distributed feedback transistor laser

F. Dixon, M. Feng, and N. Holonyak

Appl. Phys. Lett. 96, 241103 (2010); http://dx.doi.org/10.1063/1.3453656 (3 pages) | Cited 2 times

Online Publication Date: 14 June 2010

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Single longitudinal mode operation of an InGaP/GaAs/InGaAs quantum well heterojunction bipolar transistor laser is reported. A third order distributed feedback surface grating is fabricated in the top emitter AlGaAs confining layers using soft photocurable nanoimprint lithography. The device produces continuous wave laser operation with a peak wavelength λ = 959.75 nm and threshold current IB = 13 mA operating at −70 °C. For devices with cleaved ends a sidemode suppression ratio >25 dB has been achieved.
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42.55.Px Semiconductor lasers; laser diodes

Tunable and rotatable polarization controller using photonic crystal fiber filled with liquid crystal

Lei Wei, Thomas Tanggaard Alkeskjold, and Anders Bjarklev

Appl. Phys. Lett. 96, 241104 (2010); http://dx.doi.org/10.1063/1.3455105 (3 pages) | Cited 1 time

Online Publication Date: 15 June 2010

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We design and fabricate a compact tunable and rotatable polarization controller using liquid crystal photonic band gap fibers. The electrically and thermally induced phase shift in the Poincaré sphere and corresponding birefringence change are measured. The direction of the electric field is managed by connecting four electrodes in different electrode configurations, and the thermal tunability is controlled by on-chip heaters. According to the results, a quarter-wave plate and a half-wave plate working in the wavelength range of 1520–1600 nm are experimentally demonstrated.
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42.82.Bq Design and performance testing of integrated-optical systems
42.82.Cr Fabrication techniques; lithography, pattern transfer
42.79.Ci Filters, zone plates, and polarizers
42.70.Qs Photonic bandgap materials
42.81.Wg Other fiber-optical devices
42.70.Df Liquid crystals

Hot carrier injection from nanometer-thick silicon-on-insulator films measured by optical second-harmonic generation

Ming Lei, J. Price, and M. C. Downer

Appl. Phys. Lett. 96, 241105 (2010); http://dx.doi.org/10.1063/1.3455317 (3 pages) | Cited 3 times

Online Publication Date: 15 June 2010

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Time-dependent electrostatic field-induced second-harmonic (TD-EFISH) generation is used to probe optically excited hot carrier injection (HCI) from silicon-on-insulator (SOI) films as thin as 2 nm into both native oxide and buried oxide (BOX), without device fabrication. The two HCI processes induce TD-EFISH signals of opposite sign, at different rates, whereby they are distinguished straightforwardly. HCI at the SOI/BOX interface is dominated by two-photon injection into HF defect induced traps created during SOI thinning. The results demonstrate that SHG can noninvasively and quantitatively characterize HCI, a key determinant of SOI device reliability.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
79.20.Ws Multiphoton absorption
72.20.Ht High-field and nonlinear effects

Analysis of a narrowband terahertz signal generated by a unitravelling carrier photodiode coupled with a dual-mode semiconductor Fabry–Pérot laser

Sylwester Latkowski, Josué Parra-Cetina, Ramón Maldonado-Basilio, Pascal Landais, Guillaume Ducournau, Alexandre Beck, Emilien Peytavit, Tahsin Akalin, and Jean-François Lampin

Appl. Phys. Lett. 96, 241106 (2010); http://dx.doi.org/10.1063/1.3447931 (3 pages) | Cited 3 times

Online Publication Date: 15 June 2010

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A narrowband terahertz signal generated by a unitravelling carrier photodiode (UTC-PD) interfaced with a dual-mode Fabry–Pérot laser diode is demonstrated. A beat tone corresponding to the free spectral range is generated on the UTC-PD, and radiated by a transverse-electromagnetic-horn antenna. A terahertz signal at a frequency of 372 GHz, featuring a linewidth of 17 MHz is recorded by a subharmonic mixer coupled to an electrical spectrum analyzer. All components involved in this experiment operate at room temperature. The linewidth and the frequency of the emitted terahertz wave are analyzed, along with their dependency on dc-bias conditions applied to laser diode.
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85.60.Dw Photodiodes; phototransistors; photoresistors
42.55.Px Semiconductor lasers; laser diodes
84.40.-x Radiowave and microwave (including millimeter wave) technology

High-performance, homogeneous broad-gain quantum cascade lasers based on dual-upper-state design

Kazuue Fujita, Tadataka Edamura, Shinichi Furuta, and Masamichi Yamanishi

Appl. Phys. Lett. 96, 241107 (2010); http://dx.doi.org/10.1063/1.3455102 (3 pages) | Cited 10 times

Online Publication Date: 16 June 2010

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A broad-gain quantum cascade laser design with dual-upper-state is proposed to clarify its own feasibility. Devices employing the proposed active region design exhibit homogeneously wide (>330 cm−1) electroluminescence spectra of which shapes are insensitive to voltage changes. A buried heterostructure laser, emitting at λ ∼ 8.4 μm, demonstrates a high continuous-wave output power of 152 mW together with a high constant slope efficiency of 518 W/A at room temperature. In addition, the device performance is observed to be very insensitive to temperature change; T0-values of ∼ 306 K and constant slope efficiency over the wide temperature range, 280–400 K.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Achieving anisotropy in metamaterials made of dielectric cylindrical rods

L. Peng, Lixin Ran, and N. A. Mortensen

Appl. Phys. Lett. 96, 241108 (2010); http://dx.doi.org/10.1063/1.3453446 (3 pages) | Cited 8 times

Online Publication Date: 16 June 2010

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We show that anisotropic negative effective dispersion relation can be achieved in pure dielectric rod-type metamaterials by turning from the symmetry of a square lattice to that of a rectangular one. Theoretical predictions and conclusions are verified by both numerical calculations and computer based simulations. The proposed anisotropic metamaterial, is used to construct a refocusing slab lens and a subdiffraction hyperlens. The all-dielectric origin makes it more straightforward to address loss and scaling, thus facilitating future applications in both the terahertz and optical range.
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42.70.-a Optical materials
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
02.10.-v Logic, set theory, and algebra
02.60.-x Numerical approximation and analysis
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Optical transmission properties of C-shaped subwavelength waveguides on silicon

O. Lopatiuk-Tirpak, J. Ma, and S. Fathpour

Appl. Phys. Lett. 96, 241109 (2010); http://dx.doi.org/10.1063/1.3455839 (3 pages) | Cited 1 time

Online Publication Date: 16 June 2010

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Optical properties of C-shaped subwavelength waveguides in metallic (silver) films on silicon substrates are studied in the range of 0.6–6 μm. Power throughput and resonant wavelengths of several transmission modes are studied by varying the waveguide length (or metal thickness). Among three types of transmission modes, the fundamental order of the Fabry–Perot-type mode was shown to attain remarkably high power throughputs (as high as 12). With optimized design of the aperture, the resonant wavelength of this mode occurs in the 1–2 μm wavelength range, suggesting that such apertures can be utilized to achieve plasmonic-enhanced silicon photonic devices at telecommunication wavelengths.
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42.82.Et Waveguides, couplers, and arrays
42.79.Gn Optical waveguides and couplers
78.66.Bz Metals and metallic alloys

Gradient index metamaterial based on slot elements

Oliver Paul, Benjamin Reinhard, Bernd Krolla, René Beigang, and Marco Rahm

Appl. Phys. Lett. 96, 241110 (2010); http://dx.doi.org/10.1063/1.3453758 (3 pages) | Cited 9 times

Online Publication Date: 16 June 2010

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We present a gradient-index (GRIN) metamaterial based on an array of annular slots. The structure allows a large variation in the effective refractive index under normal-to-plane incidence and thus enables the construction of GRIN devices consisting of only a small number of functional layers. Using full-wave simulations, we demonstrate the annular slot concept by means of a three-unit-cell thin GRIN lens for the terahertz (THz) range. In the presented realizations, we achieved an index contrast of Δn = 1.5 resulting in a highly refractive flat lens which is suitable for focusing THz radiation to a spot size smaller than the wavelength.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.79.Bh Lenses, prisms and mirrors
42.79.Ry Gradient-index (GRIN) devices

Diode lasers with asymmetric waveguide and improved beam properties

Jianfeng Chen, Gela Kipshidze, and Leon Shterengas

Appl. Phys. Lett. 96, 241111 (2010); http://dx.doi.org/10.1063/1.3452354 (3 pages) | Cited 3 times

Online Publication Date: 17 June 2010

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Fast axis beam divergence of 1.95 μm GaSb-based diode lasers was reduced to 42° of full-width-at-half-maximum. The beam properties were improved thanks to development of efficient laser heterostructure with asymmetric waveguide. Near field was expanded almost exclusively into n-cladding by reduction in the refractive index step at the corresponding heterointeraface. The related reduction in the band offset between waveguide core and n-cladding was balanced by introduction of the thin carrier stopper layer. Multimode 100 μm wide ridge waveguide lasers demonstrated continuous wave output power of about 1.5 W at 8 A at 20 °C.
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42.55.Px Semiconductor lasers; laser diodes
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
71.20.Nr Semiconductor compounds
81.65.-b Surface treatments

Cu/p-Si Schottky barrier-based near infrared photodetector integrated with a silicon-on-insulator waveguide

M. Casalino, L. Sirleto, M. Iodice, N. Saffioti, M. Gioffrè, I. Rendina, and G. Coppola

Appl. Phys. Lett. 96, 241112 (2010); http://dx.doi.org/10.1063/1.3455339 (3 pages) | Cited 5 times

Online Publication Date: 17 June 2010

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In this letter, a near infrared all-silicon (all-Si) photodetector integrated into a silicon-on-insulator waveguide is demonstrated. The device is based on the internal photoemission effect through a metal/Si Schottky junction placed transversally to the optical field confined into the waveguide. The technological steps utilized to fabricate the device allow an efficiently monolithic integration with complementary metal-oxide semiconductor compatible structures. Preliminary results show a responsivity of 0.08 mA/W at 1550 nm with a reverse bias of 1 V and an efficient behavior both in C and L band. Finally, an estimation of bandwidth for GHz range is deduced.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
84.40.Az Waveguides, transmission lines, striplines

One-step implementation of multiqubit conditional phase gating with nitrogen-vacancy centers coupled to a high-Q silica microsphere cavity

W. L. Yang, Z. Q. Yin, Z. Y. Xu, M. Feng, and J. F. Du

Appl. Phys. Lett. 96, 241113 (2010); http://dx.doi.org/10.1063/1.3455891 (3 pages) | Cited 17 times

Online Publication Date: 18 June 2010

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The diamond nitrogen-vacancy (NV) center is an excellent candidate for quantum information processing, whereas entangling separate NV centers is still of great experimental challenge. We propose a one-step conditional phase flip with three NV centers coupled to a whispering-gallery mode cavity by virtue of the Raman transition and smart qubit encoding. As decoherence is much suppressed, our scheme could work for more qubits. The experimental feasibility is justified.
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03.67.Lx Quantum computation architectures and implementations
03.67.Mn Entanglement measures, witnesses, and other characterizations
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Simultaneous plasma and electric field diagnostics of microdischarge from hydrogen Balmer line shape

Dj. Spasojević, M. Cvejić, N. M. Šišović, and N. Konjević

Appl. Phys. Lett. 96, 241501 (2010); http://dx.doi.org/10.1063/1.3449129 (3 pages) | Cited 6 times

Online Publication Date: 14 June 2010

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Hydrogen Balmer beta line shape from a microhollow gas discharge in argon with traces of hydrogen is used for simultaneous diagnostics of plasma and cathode sheath parameters. Simple model of relevant processes responsible for line broadening is developed and results favorably compared with experiment at 500 mbar with the electron density 3.8×1020 m−3 and electric field strength of 127 kV/cm in the cathode sheath region.
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52.70.Ds Electric and magnetic measurements
52.25.-b Plasma properties
52.40.Kh Plasma sheaths
52.80.Hc Glow; corona
52.70.Kz Optical (ultraviolet, visible, infrared) measurements
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Structure and chemistry of the (111)Sc2O3/(0001) GaN epitaxial interface

X. Weng, W. Tian, D. G. Schlom, and E. C. Dickey

Appl. Phys. Lett. 96, 241901 (2010); http://dx.doi.org/10.1063/1.3454924 (3 pages) | Cited 4 times

Online Publication Date: 14 June 2010

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The structure and chemistry of the (111)Sc2O3/(0001) GaN epitaxial interface grown by molecular-beam epitaxy have been investigated. High-resolution transmission electron microscopy reveals an abrupt Sc2O3/GaN interface with a hexagonal misfit dislocation network. These dislocations have Burgers vectors of (a/3)〈11math0〉GaN and line directions parallel to 〈1math00〉GaN, with an average spacing of ∼ 3.8 nm. Scanning transmission electron microscopy and electron energy loss spectrometry reveal the intermixing of Sc, O, and N over a region with a width of ∼ 1.5 nm at the interface.
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68.35.Ct Interface structure and roughness
68.55.ag Semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Charge-transfer absorption band in Zn1−xMxO (M: Co, Mn) investigated by means of photoconductivity, Ga doping, and optical measurements under pressure

S. G. Gilliland, J. A. Sans, J. F. Sánchez-Royo, G. Almonacid, and A. Segura

Appl. Phys. Lett. 96, 241902 (2010); http://dx.doi.org/10.1063/1.3454243 (3 pages) | Cited 6 times

Online Publication Date: 16 June 2010

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The nature of the charge-transfer absorption band in undoped and Ga-doped Zn1−xMxO (M: Co, Mn) thin films is investigated by means of photoconductivity and optical absorption measurements under pressure. Internal transitions in the crystal field split Co 3d shell do not contribute to the photoconductivity spectrum and have very low pressure coefficient. Broad absorption bands at photon energies just below the band gap in both ZnMnO and ZnCoO clearly contribute to the photoconductivity spectra, indicating that they create free carriers and are consequently charge-transfer transitions. Under pressure, charge transfer bands have a pressure coefficient close to or larger than the band gap, in contrast to the expected low or negative pressure coefficient in a valence-band-to-localized level transition. Finally, the expected Burstein–Moss shift in the fundamental edge of heavily Ga-doped samples of ZnMO is associated to a larger shift and intensity decrease in the pre-edge band, confirming that charge-transfer transitions in ZnMO should be ascribed to transitions from the Co or Mn 3d shell to the conduction band.
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71.70.Ch Crystal and ligand fields
78.66.Hf II-VI semiconductors
73.50.Pz Photoconduction and photovoltaic effects
78.56.-a Photoconduction and photovoltaic effects
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
61.72.uj III-V and II-VI semiconductors

The structure and growth direction of rare earth silicide nanowires on Si(100)

C. Eames, M. I. J. Probert, and S. P. Tear

Appl. Phys. Lett. 96, 241903 (2010); http://dx.doi.org/10.1063/1.3453865 (3 pages) | Cited 2 times

Online Publication Date: 18 June 2010

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The growth direction and the structure of rare earth silicide nanowires grown on the Si(100) surface have been calculated from first principles. The energies of the optimum structures show that a structure related to the tetragonal bulk phase is more favorable than the hexagonal model and that growth parallel to the dimer rows is lower in energy than growth across the dimer rows.
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61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
81.07.Gf Nanowires
81.16.-c Methods of micro- and nanofabrication and processing

Contactless electroreflectance study of Fermi-level pinning at the surface of cubic GaN

R. Kudrawiec, E. Tschumak, J. Misiewicz, and D. J. As

Appl. Phys. Lett. 96, 241904 (2010); http://dx.doi.org/10.1063/1.3455907 (3 pages) | Cited 5 times

Online Publication Date: 18 June 2010

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Van Hoof structures C. Van Hoof, K. Deneffe, J. De Boeck, D. J. Arent, and G. Borghs, [Appl. Phys. Lett. 54, 608 (1989)] with various thicknesses of the undoped layer, for which a homogeneous built-in electric field is expected, were grown for studies of the Fermi-level pinning at the surface of cubic GaN. The built-in electric field in the undoped GaN layer was determined from contactless electroreflectance measurements of Franz–Keldysh oscillations. A good agreement between the determined and calculated electric field has been found for the Fermi-level located ∼ 0.4 eV below the conduction band at the surface.
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78.20.Jq Electro-optical effects
71.20.Nr Semiconductor compounds
78.66.Hf II-VI semiconductors
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Tellurium assisted realization of p-type N-doped ZnO

Kun Tang, Shulin Gu, Kongping Wu, Shunming Zhu, Jiandong Ye, Rong Zhang, and Youdou Zheng

Appl. Phys. Lett. 96, 242101 (2010); http://dx.doi.org/10.1063/1.3453658 (3 pages) | Cited 8 times

Online Publication Date: 14 June 2010

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In this paper, the authors demonstrate an effective pathway to enhance the p-type conduction in N-doped ZnO through codoping method with tellurium during metal-organic chemical vapor deposition process. Tellurium may act as a surfactant in reducing the formation energy of the NO acceptors and thus to enhance the incorporation efficiency of nitrogen. In addition, this codoping method shows a significant effect in suppressing the formation of donorlike carbon related complexes. The increased hole carrier concentration exhibits strong evidence to the enhancement of dopant solubility, and the Te–N codoping method provides an efficient technique for realizing p-type ZnO.
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72.80.Ey III-V and II-VI semiconductors
61.72.U- Doping and impurity implantation
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.Dz II-VI semiconductors

Electrical properties of p-type and n-type doped inverse silicon opals - towards optically amplified silicon solar cells

T. Suezaki, J. I. L. Chen, T. Hatayama, T. Fuyuki, and G. A. Ozin

Appl. Phys. Lett. 96, 242102 (2010); http://dx.doi.org/10.1063/1.3447374 (3 pages) | Cited 5 times

Online Publication Date: 14 June 2010

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While the silicon photonic crystals have promised revolutionary developments in the field of optical telecommunications and optical computing, it has only recently been realized that their prowess to trap and slow photons could potentially and significantly improve the efficiency of silicon solar cells. In this work n-doped and p-doped inverse silicon opals are synthesized and processed to optimize their electrical charge transport properties, which are shown to be of semiconductor device quality. Moreover a prototype p-i-n junction solar cell based on the inverse silicon opal is reduced to practice and its optoelectronic behavior is evaluated.
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88.40.jj Silicon solar cells
42.70.Qs Photonic bandgap materials
85.60.-q Optoelectronic devices

CdTe Schottky diodes from colloidal nanocrystals

J. D. Olson, Y. W. Rodriguez, L. D. Yang, G. B. Alers, and S. A. Carter

Appl. Phys. Lett. 96, 242103 (2010); http://dx.doi.org/10.1063/1.3440384 (3 pages) | Cited 13 times

Online Publication Date: 15 June 2010

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We have fabricated ultrathin photovoltaic cadmium telluride (CdTe) film solar cells from colloidal nanorod solutions with a power conversion efficiency of 5.0% and internal quantum efficiency approaching unity near the band edge. Sintering of the CdTe nanorod films was necessary to facilitate grain growth and enhanced optical absorption. By analyzing electrode dependence, capacitance-voltage, temperature dependence, and current-voltage characteristics, the device performance is shown to be dominated by the formation of a p-CdTe/Al Schottky junction. The reduced need for material and cheaper processing make this an attractive technology for solar power generation.
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85.30.Kk Junction diodes
82.70.Dd Colloids
78.66.Hf II-VI semiconductors
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
61.46.-w Structure of nanoscale materials
88.40.H- Solar cells (photovoltaics)
68.55.ag Semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Current-controlled negative differential resistance effect induced by Gunn-type instability in n-type GaN epilayers

N. Ma, B. Shen, F. J. Xu, L. W. Lu, Z. H. Feng, Z. G. Zhang, S. B. Dun, C. P. Wen, J. Y. Wang, F. Lin, D. T. Zhang, and M. Sun

Appl. Phys. Lett. 96, 242104 (2010); http://dx.doi.org/10.1063/1.3455070 (3 pages) | Cited 1 time

Online Publication Date: 15 June 2010

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High-field carrier transport properties probed by pulsed current-voltage characteristics in n-type GaN epilayers have been investigated at room temperature. The threshold electric field of the Gunn effect is experimentally determined to be about 400 kV/cm with an electron peak velocity of about 1.9×107 cm/s. The current-controlled negative differential resistance effect induced by the Gunn-type instability in n-type GaN is observed, which takes the early electric breakdown of the GaN epilayers in charge.
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73.61.Ey III-V semiconductors
77.22.Jp Dielectric breakdown and space-charge effects
72.20.Ht High-field and nonlinear effects

Influence of positive bias stress on N2O plasma improved InGaZnO thin film transistor

Chih-Tsung Tsai, Ting-Chang Chang, Shih-Ching Chen, Ikai Lo, Shu-Wei Tsao, Ming-Chin Hung, Jiun-Jye Chang, Chen-Yi Wu, and Chun-Yao Huang

Appl. Phys. Lett. 96, 242105 (2010); http://dx.doi.org/10.1063/1.3453870 (3 pages) | Cited 29 times

Online Publication Date: 15 June 2010

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A post-treatment using N2O-plasma is applied to enhance the electrical characteristics of amorphous indium gallium zinc oxide thin film transistors. Improvements in the field-effect mobility and the subthreshold swing demonstrate that interface states were passivated after N2O-plasma treatment, and a better stability under positive gate-bias stress was obtained in addition. The degradation of mobility, resulted from bias stress, reduces from 6.1% (untreated devices) to 2.6% (N2O-plasma treated devices). Nevertheless, a strange hump characteristic occurs in transfer curve during bias stress, inferring that a parasitic transistor had been caused by the gate-induced electrical field.
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85.30.Tv Field effect devices

Ambipolar ballistic electron emission microscopy studies of gate-field modified Schottky barriers

Y. L. Che and J. P. Pelz

Appl. Phys. Lett. 96, 242106 (2010); http://dx.doi.org/10.1063/1.3453866 (3 pages)

Online Publication Date: 16 June 2010

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Four-terminal ambipolar ballistic electron emission microscopy studies are conducted on Au/Si and Cu/Si Schottky contacts fabricated on back-gated silicon-on-insulator wafers, allowing the electric field to be varied so that both electron (n)- and hole (p)-Schottky barrier heights can be measured at the same sample location. While the individual n- and p-Schottky barrier heights varied by more than 200 meV between the Au/Si and Cu/Si contacts, for a given sample they sum to within 15 meV of the same value, indicating that the individual variations are due to variations in a local surface dipole as compared with tip effects or variations in local composition.
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73.40.Ns Metal-nonmetal contacts
73.30.+y Surface double layers, Schottky barriers, and work functions
68.37.Vj Field emission and field-ion microscopy

Extrinsic doping in silicon revisited

U. Schwingenschlögl, A. Chroneos, C. Schuster, and R. W. Grimes

Appl. Phys. Lett. 96, 242107 (2010); http://dx.doi.org/10.1063/1.3455313 (3 pages) | Cited 9 times

Online Publication Date: 17 June 2010

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Both n-type and p-type doping of silicon is at odds with the charge transfer predicted by Pauling electronegativities and can only be reconciled if we no longer regarding dopant species as isolated atoms but rather consider them as clusters consisting of the dopant and its four nearest neighbor silicon atoms. The process that gives rise to n-type and p-type effects is the charge redistribution that occurs between the dopant and its neighbors, as we illustrate here using electronic structure calculations. This view point is able to explain why conventional substitutional n-type doping of carbon has been so difficult.
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61.72.uf Ge and Si
71.15.-m Methods of electronic structure calculations
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