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Appl. Phys. Lett. 96, 241903 (2010); http://dx.doi.org/10.1063/1.3453865 (3 pages)

The structure and growth direction of rare earth silicide nanowires on Si(100)

C. Eames, M. I. J. Probert, and S. P. Tear

Department of Physics, University of York, York YO10 5DD, United Kingdom

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(Received 14 April 2010; accepted 25 May 2010; published online 18 June 2010)

The growth direction and the structure of rare earth silicide nanowires grown on the Si(100) surface have been calculated from first principles. The energies of the optimum structures show that a structure related to the tetragonal bulk phase is more favorable than the hexagonal model and that growth parallel to the dimer rows is lower in energy than growth across the dimer rows.

© 2010 American Institute of Physics

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KEYWORDS and PACS

PACS

  • 61.46.Km

    Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)

  • 81.07.Gf

    Nanowires

  • 81.16.-c

    Methods of micro- and nanofabrication and processing

ARTICLE DATA

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

For access to fully linked references, you need to log in.
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