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14 Jun 2010

Volume 96, Issue 24, Articles (24xxxx)

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Appl. Phys. Lett. 96, 241101 (2010); http://dx.doi.org/10.1063/1.3449576 (3 pages)

Rui Chen, H. D. Sun, T. Wang, K. N. Hui, and H. W. Choi
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Tellurium assisted realization of p-type N-doped ZnO

Kun Tang, Shulin Gu, Kongping Wu, Shunming Zhu, Jiandong Ye, Rong Zhang, and Youdou Zheng

Appl. Phys. Lett. 96, 242101 (2010); http://dx.doi.org/10.1063/1.3453658 (3 pages) | Cited 8 times

Online Publication Date: 14 June 2010

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In this paper, the authors demonstrate an effective pathway to enhance the p-type conduction in N-doped ZnO through codoping method with tellurium during metal-organic chemical vapor deposition process. Tellurium may act as a surfactant in reducing the formation energy of the NO acceptors and thus to enhance the incorporation efficiency of nitrogen. In addition, this codoping method shows a significant effect in suppressing the formation of donorlike carbon related complexes. The increased hole carrier concentration exhibits strong evidence to the enhancement of dopant solubility, and the Te–N codoping method provides an efficient technique for realizing p-type ZnO.
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72.80.Ey III-V and II-VI semiconductors
61.72.U- Doping and impurity implantation
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.05.Dz II-VI semiconductors

Electrical properties of p-type and n-type doped inverse silicon opals - towards optically amplified silicon solar cells

T. Suezaki, J. I. L. Chen, T. Hatayama, T. Fuyuki, and G. A. Ozin

Appl. Phys. Lett. 96, 242102 (2010); http://dx.doi.org/10.1063/1.3447374 (3 pages) | Cited 5 times

Online Publication Date: 14 June 2010

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While the silicon photonic crystals have promised revolutionary developments in the field of optical telecommunications and optical computing, it has only recently been realized that their prowess to trap and slow photons could potentially and significantly improve the efficiency of silicon solar cells. In this work n-doped and p-doped inverse silicon opals are synthesized and processed to optimize their electrical charge transport properties, which are shown to be of semiconductor device quality. Moreover a prototype p-i-n junction solar cell based on the inverse silicon opal is reduced to practice and its optoelectronic behavior is evaluated.
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88.40.jj Silicon solar cells
42.70.Qs Photonic bandgap materials
85.60.-q Optoelectronic devices

CdTe Schottky diodes from colloidal nanocrystals

J. D. Olson, Y. W. Rodriguez, L. D. Yang, G. B. Alers, and S. A. Carter

Appl. Phys. Lett. 96, 242103 (2010); http://dx.doi.org/10.1063/1.3440384 (3 pages) | Cited 13 times

Online Publication Date: 15 June 2010

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We have fabricated ultrathin photovoltaic cadmium telluride (CdTe) film solar cells from colloidal nanorod solutions with a power conversion efficiency of 5.0% and internal quantum efficiency approaching unity near the band edge. Sintering of the CdTe nanorod films was necessary to facilitate grain growth and enhanced optical absorption. By analyzing electrode dependence, capacitance-voltage, temperature dependence, and current-voltage characteristics, the device performance is shown to be dominated by the formation of a p-CdTe/Al Schottky junction. The reduced need for material and cheaper processing make this an attractive technology for solar power generation.
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85.30.Kk Junction diodes
82.70.Dd Colloids
78.66.Hf II-VI semiconductors
84.70.+p High-current and high-voltage technology: power systems; power transmission lines and cables
61.46.-w Structure of nanoscale materials
88.40.H- Solar cells (photovoltaics)
68.55.ag Semiconductors
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Current-controlled negative differential resistance effect induced by Gunn-type instability in n-type GaN epilayers

N. Ma, B. Shen, F. J. Xu, L. W. Lu, Z. H. Feng, Z. G. Zhang, S. B. Dun, C. P. Wen, J. Y. Wang, F. Lin, D. T. Zhang, and M. Sun

Appl. Phys. Lett. 96, 242104 (2010); http://dx.doi.org/10.1063/1.3455070 (3 pages) | Cited 1 time

Online Publication Date: 15 June 2010

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High-field carrier transport properties probed by pulsed current-voltage characteristics in n-type GaN epilayers have been investigated at room temperature. The threshold electric field of the Gunn effect is experimentally determined to be about 400 kV/cm with an electron peak velocity of about 1.9×107 cm/s. The current-controlled negative differential resistance effect induced by the Gunn-type instability in n-type GaN is observed, which takes the early electric breakdown of the GaN epilayers in charge.
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73.61.Ey III-V semiconductors
77.22.Jp Dielectric breakdown and space-charge effects
72.20.Ht High-field and nonlinear effects

Influence of positive bias stress on N2O plasma improved InGaZnO thin film transistor

Chih-Tsung Tsai, Ting-Chang Chang, Shih-Ching Chen, Ikai Lo, Shu-Wei Tsao, Ming-Chin Hung, Jiun-Jye Chang, Chen-Yi Wu, and Chun-Yao Huang

Appl. Phys. Lett. 96, 242105 (2010); http://dx.doi.org/10.1063/1.3453870 (3 pages) | Cited 29 times

Online Publication Date: 15 June 2010

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A post-treatment using N2O-plasma is applied to enhance the electrical characteristics of amorphous indium gallium zinc oxide thin film transistors. Improvements in the field-effect mobility and the subthreshold swing demonstrate that interface states were passivated after N2O-plasma treatment, and a better stability under positive gate-bias stress was obtained in addition. The degradation of mobility, resulted from bias stress, reduces from 6.1% (untreated devices) to 2.6% (N2O-plasma treated devices). Nevertheless, a strange hump characteristic occurs in transfer curve during bias stress, inferring that a parasitic transistor had been caused by the gate-induced electrical field.
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85.30.Tv Field effect devices

Ambipolar ballistic electron emission microscopy studies of gate-field modified Schottky barriers

Y. L. Che and J. P. Pelz

Appl. Phys. Lett. 96, 242106 (2010); http://dx.doi.org/10.1063/1.3453866 (3 pages)

Online Publication Date: 16 June 2010

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Four-terminal ambipolar ballistic electron emission microscopy studies are conducted on Au/Si and Cu/Si Schottky contacts fabricated on back-gated silicon-on-insulator wafers, allowing the electric field to be varied so that both electron (n)- and hole (p)-Schottky barrier heights can be measured at the same sample location. While the individual n- and p-Schottky barrier heights varied by more than 200 meV between the Au/Si and Cu/Si contacts, for a given sample they sum to within 15 meV of the same value, indicating that the individual variations are due to variations in a local surface dipole as compared with tip effects or variations in local composition.
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73.40.Ns Metal-nonmetal contacts
73.30.+y Surface double layers, Schottky barriers, and work functions
68.37.Vj Field emission and field-ion microscopy

Extrinsic doping in silicon revisited

U. Schwingenschlögl, A. Chroneos, C. Schuster, and R. W. Grimes

Appl. Phys. Lett. 96, 242107 (2010); http://dx.doi.org/10.1063/1.3455313 (3 pages) | Cited 9 times

Online Publication Date: 17 June 2010

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Both n-type and p-type doping of silicon is at odds with the charge transfer predicted by Pauling electronegativities and can only be reconciled if we no longer regarding dopant species as isolated atoms but rather consider them as clusters consisting of the dopant and its four nearest neighbor silicon atoms. The process that gives rise to n-type and p-type effects is the charge redistribution that occurs between the dopant and its neighbors, as we illustrate here using electronic structure calculations. This view point is able to explain why conventional substitutional n-type doping of carbon has been so difficult.
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61.72.uf Ge and Si
71.15.-m Methods of electronic structure calculations

Noise-driven signal transmission using nonlinearity of VO2 thin films

Teruo Kanki, Yasushi Hotta, Naoki Asakawa, Tomoji Kawai, and Hidekazu Tanaka

Appl. Phys. Lett. 96, 242108 (2010); http://dx.doi.org/10.1063/1.3455335 (3 pages) | Cited 5 times

Online Publication Date: 17 June 2010

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We demonstrated signal transmission using the nonlinearity of VO2 in the manner of stochastic resonance (SR). A correlated insulator state of VO2 changes nonlinearly to a metallic state when an applied bias voltage increases beyond a threshold. The transition of the states between insulator and metal is adaptable to the SR theory. In this study, the response to a weak pulse signal was optimized by a particular level of noise via SR. Numerical SR simulations suggests the existence of multiple threshold channels in the insulating state, spontaneously enhancing the reliability of signal transmission.
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73.61.Ng Insulators
73.50.Td Noise processes and phenomena
73.50.Fq High-field and nonlinear effects
72.60.+g Mixed conductivity and conductivity transitions

Resistive switching behaviors of ZnO nanorod layers

Wen-Yuan Chang (張文淵), Chin-An Lin (林晉安), Jr-Hau He (何志浩), and Tai-Bor Wu (吳泰伯)

Appl. Phys. Lett. 96, 242109 (2010); http://dx.doi.org/10.1063/1.3453450 (3 pages) | Cited 23 times

Online Publication Date: 17 June 2010

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We have fabricated vertically aligned ZnO nanorod layers (NRLs) on indium tin oxide (ITO) electrodes using a hydrothermal process. The Pt/ZnO NRL/ITO capacitor exhibits bipolar resistive switching behavior. The resistive switching behavior may be related to the oxygen vacancies and/or zinc interstitials confined on the surface of the ZnO NRs, giving rise to the formation of straight and extensible conducting filaments along each vertically aligned ZnO NR. Superior stability in resistive switching characteristics was also observed, demonstrating that ZnO NRLs have the potential for next-generation nonvolatile memory applications.
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73.63.Bd Nanocrystalline materials
81.05.-t Specific materials: fabrication, treatment, testing, and analysis
81.07.Bc Nanocrystalline materials
81.16.-c Methods of micro- and nanofabrication and processing

Study of piezoresistance under unixial stress for technologically relevant III-V semiconductors using wafer bending experiments

Aneesh Nainani, Jung Yum, Joel Barnett, Richard Hill, Niti Goel, Jeff Huang, Prashant Majhi, Raj Jammy, and Krishna C. Saraswat

Appl. Phys. Lett. 96, 242110 (2010); http://dx.doi.org/10.1063/1.3436561 (3 pages) | Cited 4 times

Online Publication Date: 17 June 2010

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In this work, effect of uniaxial stress is studied by wafer bending on p/n-channel candidates for III-V based complimentary logic. p-GaSb has 2× higher piezoresistance (π) coefficient than p-In0.53Ga0.47As, which combined with high hole-mobility in GaSb makes it an attractive candidate for III-V p-metal-oxide-semiconductor-field-effect-transistor. Limitation on maximum stress introduced by wafer bending is improved when the III-V channel is grown epitaxially on silicon. 250 MPa of stress is achieved by wafer bending on III-V channel grown on silicon substrate, which is 5× higher than maximum stress achieved on III-V substrate.
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73.61.Ey III-V semiconductors
68.55.ag Semiconductors

Transport properties of the electron gas in ZnO/MgZnO heterostructures

A. Gold

Appl. Phys. Lett. 96, 242111 (2010); http://dx.doi.org/10.1063/1.3455881 (3 pages) | Cited 6 times

Online Publication Date: 18 June 2010

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We analyze experimental results for the mobility of the two-dimensional electron gas as realized in ZnO/MgZnO heterostructures. For zero temperature we calculate the mobility as function of the electron density for charged-impurity and for interface-roughness scattering. Multiple scattering effects, leading to a metal-insulator transition, are taken into account. The results of our calculation are in good agreement with experimental results. The numbers obtained for the parameters of interface-roughness scattering and charged-impurity scattering are reasonable. We argue that the electron gas in this heterostructure might be spin-polarized.
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73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
71.10.Ca Electron gas, Fermi gas
68.35.Ct Interface structure and roughness
72.25.-b Spin polarized transport
72.10.Fk Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect)
72.60.+g Mixed conductivity and conductivity transitions

Impact of N- and Ga-face polarity on the incorporation of deep levels in n-type GaN grown by molecular beam epitaxy

A. R. Arehart, T. Homan, M. H. Wong, C. Poblenz, J. S. Speck, and S. A. Ringel

Appl. Phys. Lett. 96, 242112 (2010); http://dx.doi.org/10.1063/1.3453660 (3 pages) | Cited 6 times

Online Publication Date: 18 June 2010

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Deep levels in N-face and Ga-face n-type GaN grown by plasma-assisted molecular beam epitaxy were detected, analyzed and compared using deep level optical spectroscopy (DLOS) and conventional thermal deep level transient spectroscopy (DLTS), which together enable deep level detection throughout the GaN band gap. A redistribution of band gap states was observed between the two GaN crystal growth polarities but with a similar total trap density. Most significant was a tenfold concentration increase in a trap at EC-0.25 eV that is likely related to nitrogen vacancies for the N-face polarity material, with no significant change for the Ga-vacancy-related level at EC-2.60 eV. The DLOS results suggest that carbon impurities, which generate several GaN band gap states, appear to incorporate differently for both crystal polarities with the potential carbon interstitial at EC-1.28 eV being undetected for N-face material. Finally, low concentrations of several new levels in the N-face n-GaN not previously observed in Ga-face n-GaN were observed.
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81.05.Ea III-V semiconductors
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
78.66.Fd III-V semiconductors
71.55.Eq III-V semiconductors
68.55.ag Semiconductors
52.77.Dq Plasma-based ion implantation and deposition

Unusual metallic-like transport near the percolation threshold

Ravi Bhatia, C. S. Suchand Sangeeth, V. Prasad, and Reghu Menon

Appl. Phys. Lett. 96, 242113 (2010); http://dx.doi.org/10.1063/1.3455895 (3 pages) | Cited 3 times

Online Publication Date: 18 June 2010

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In multiwall carbon nanotube (MWNT)—polystyrene (PS) composites, a weak temperature dependence of conductivity has been observed at a percolation threshold of 0.4 wt %. The power law [σ(T)∝T0.3] behavior indicates metallic-like behavior, unlike the usual activated transport for systems near the percolation threshold. The low field positive magnetoconductance follows H2 dependence, due to the weak localization in disordered metallic systems. The marginal metallic nature of MWNT-PS at percolation threshold is further verified from the negligible frequency dependence of conductivity, in the temperature range of 300 to 5 K.
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73.63.Bd Nanocrystalline materials
72.20.My Galvanomagnetic and other magnetotransport effects
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