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14 Jun 2010

Volume 96, Issue 24, Articles (24xxxx)

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Appl. Phys. Lett. 96, 241101 (2010); http://dx.doi.org/10.1063/1.3449576 (3 pages)

Rui Chen, H. D. Sun, T. Wang, K. N. Hui, and H. W. Choi
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Fe diffusion in polycrystalline Cu(In,Ga)Se2 layers for thin-film solar cells

N. A. Stolwijk, Sh. Obeidi, J. Bastek, R. Wuerz, and A. Eicke

Appl. Phys. Lett. 96, 244101 (2010); http://dx.doi.org/10.1063/1.3449125 (3 pages) | Cited 4 times

Online Publication Date: 14 June 2010

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Diffusion of Fe in solar-grade Cu(In,Ga)Se2 (CIGSe) layers was investigated over the temperature range from 200 to 600 °C. Either natural or radioactive iron was diffused from the front-surface of CIGSe/Mo/soda lime glass samples. Penetration profiles of stable 56Fe and radioactive 59Fe were measured by secondary ion mass spectrometry (SIMS) and ion-beam sputtering in conjunction with activity counting, respectively. The Fe diffusivity can be described by the Arrhenius equation D = 1.6×10−4 exp(−0.97 eV/kBT) cm2 s−1. Taking into account Fe solubility data obtained from the SIMS profiles, we provide evidence that D is representative of diffusion along grain boundaries.
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68.35.Fx Diffusion; interface formation
79.20.Rf Atomic, molecular, and ion beam impact and interactions with surfaces
61.72.Mm Grain and twin boundaries
64.75.Bc Solubility
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