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14 Jun 2010

Volume 96, Issue 24, Articles (24xxxx)

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Appl. Phys. Lett. 96, 241101 (2010); http://dx.doi.org/10.1063/1.3449576 (3 pages)

Rui Chen, H. D. Sun, T. Wang, K. N. Hui, and H. W. Choi
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Optically pumped ultraviolet lasing from nitride nanopillars at room temperature

Rui Chen, H. D. Sun, T. Wang, K. N. Hui, and H. W. Choi

Appl. Phys. Lett. 96, 241101 (2010); http://dx.doi.org/10.1063/1.3449576 (3 pages) | Cited 12 times

Online Publication Date: 14 June 2010

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A vertical cavity structure composing of an in situ grown bottom AlxGa1−xN/AlyGa1−yN distributed Bragg reflector and a top SiO2/HfO2 dielectric mirror for ultraviolet (UV) emission has been demonstrated. Close-packed nanopillars with diameters of around 500 nm have been achieved by the route of nanosphere lithography combined with inductively-coupled plasma etching. Optically-pumped UV lasing at a wavelength of 343.7 nm (3.608 eV) was observed at room temperature, with a threshold excitation density of 0.52 MW/cm2. The mechanism of the lasing action is discussed in detail. Our investigation indicates promising possibilities in nitride-based resonant cavity devices, particularly toward realizing the UV nitride-based vertical-cavity surface-emitting laser.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.72.Bj Visible and ultraviolet sources
42.60.Da Resonators, cavities, amplifiers, arrays, and rings

Saturation of the Raman amplification by self-phase modulation in silicon nanowaveguides

Felix Kroeger, Aleksandr Ryasnyanskiy, Alexandre Baron, Nicolas Dubreuil, Philippe Delaye, Robert Frey, Gérald Roosen, and David Peyrade

Appl. Phys. Lett. 96, 241102 (2010); http://dx.doi.org/10.1063/1.3451466 (3 pages) | Cited 3 times

Online Publication Date: 14 June 2010

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We experimentally show that the self-phase modulation of picosecond pump pulses, induced by both the optical Kerr effect and free-carrier refraction, has a detrimental effect on the maximum on-off Raman gain achievable in silicon on insulator nanowaveguides, causing it to saturate. A simple calculation of the Raman gain coefficient from the measured broadened output pump spectra perfectly matches the saturated behavior of the amplified Raman signal observed experimentally at different input pump powers.
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42.82.Et Waveguides, couplers, and arrays
42.65.Jx Beam trapping, self-focusing and defocusing; self-phase modulation
42.65.Dr Stimulated Raman scattering; CARS
42.65.Es Stimulated Brillouin and Rayleigh scattering

Distributed feedback transistor laser

F. Dixon, M. Feng, and N. Holonyak

Appl. Phys. Lett. 96, 241103 (2010); http://dx.doi.org/10.1063/1.3453656 (3 pages) | Cited 2 times

Online Publication Date: 14 June 2010

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Single longitudinal mode operation of an InGaP/GaAs/InGaAs quantum well heterojunction bipolar transistor laser is reported. A third order distributed feedback surface grating is fabricated in the top emitter AlGaAs confining layers using soft photocurable nanoimprint lithography. The device produces continuous wave laser operation with a peak wavelength λ = 959.75 nm and threshold current IB = 13 mA operating at −70 °C. For devices with cleaved ends a sidemode suppression ratio >25 dB has been achieved.
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42.55.Px Semiconductor lasers; laser diodes

Tunable and rotatable polarization controller using photonic crystal fiber filled with liquid crystal

Lei Wei, Thomas Tanggaard Alkeskjold, and Anders Bjarklev

Appl. Phys. Lett. 96, 241104 (2010); http://dx.doi.org/10.1063/1.3455105 (3 pages) | Cited 1 time

Online Publication Date: 15 June 2010

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We design and fabricate a compact tunable and rotatable polarization controller using liquid crystal photonic band gap fibers. The electrically and thermally induced phase shift in the Poincaré sphere and corresponding birefringence change are measured. The direction of the electric field is managed by connecting four electrodes in different electrode configurations, and the thermal tunability is controlled by on-chip heaters. According to the results, a quarter-wave plate and a half-wave plate working in the wavelength range of 1520–1600 nm are experimentally demonstrated.
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42.82.Bq Design and performance testing of integrated-optical systems
42.82.Cr Fabrication techniques; lithography, pattern transfer
42.79.Ci Filters, zone plates, and polarizers
42.70.Qs Photonic bandgap materials
42.81.Wg Other fiber-optical devices
42.70.Df Liquid crystals

Hot carrier injection from nanometer-thick silicon-on-insulator films measured by optical second-harmonic generation

Ming Lei, J. Price, and M. C. Downer

Appl. Phys. Lett. 96, 241105 (2010); http://dx.doi.org/10.1063/1.3455317 (3 pages) | Cited 3 times

Online Publication Date: 15 June 2010

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Time-dependent electrostatic field-induced second-harmonic (TD-EFISH) generation is used to probe optically excited hot carrier injection (HCI) from silicon-on-insulator (SOI) films as thin as 2 nm into both native oxide and buried oxide (BOX), without device fabrication. The two HCI processes induce TD-EFISH signals of opposite sign, at different rates, whereby they are distinguished straightforwardly. HCI at the SOI/BOX interface is dominated by two-photon injection into HF defect induced traps created during SOI thinning. The results demonstrate that SHG can noninvasively and quantitatively characterize HCI, a key determinant of SOI device reliability.
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73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
42.65.Ky Frequency conversion; harmonic generation, including higher-order harmonic generation
79.20.Ws Multiphoton absorption
72.20.Ht High-field and nonlinear effects

Analysis of a narrowband terahertz signal generated by a unitravelling carrier photodiode coupled with a dual-mode semiconductor Fabry–Pérot laser

Sylwester Latkowski, Josué Parra-Cetina, Ramón Maldonado-Basilio, Pascal Landais, Guillaume Ducournau, Alexandre Beck, Emilien Peytavit, Tahsin Akalin, and Jean-François Lampin

Appl. Phys. Lett. 96, 241106 (2010); http://dx.doi.org/10.1063/1.3447931 (3 pages) | Cited 3 times

Online Publication Date: 15 June 2010

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A narrowband terahertz signal generated by a unitravelling carrier photodiode (UTC-PD) interfaced with a dual-mode Fabry–Pérot laser diode is demonstrated. A beat tone corresponding to the free spectral range is generated on the UTC-PD, and radiated by a transverse-electromagnetic-horn antenna. A terahertz signal at a frequency of 372 GHz, featuring a linewidth of 17 MHz is recorded by a subharmonic mixer coupled to an electrical spectrum analyzer. All components involved in this experiment operate at room temperature. The linewidth and the frequency of the emitted terahertz wave are analyzed, along with their dependency on dc-bias conditions applied to laser diode.
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85.60.Dw Photodiodes; phototransistors; photoresistors
42.55.Px Semiconductor lasers; laser diodes
84.40.-x Radiowave and microwave (including millimeter wave) technology

High-performance, homogeneous broad-gain quantum cascade lasers based on dual-upper-state design

Kazuue Fujita, Tadataka Edamura, Shinichi Furuta, and Masamichi Yamanishi

Appl. Phys. Lett. 96, 241107 (2010); http://dx.doi.org/10.1063/1.3455102 (3 pages) | Cited 10 times

Online Publication Date: 16 June 2010

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A broad-gain quantum cascade laser design with dual-upper-state is proposed to clarify its own feasibility. Devices employing the proposed active region design exhibit homogeneously wide (>330 cm−1) electroluminescence spectra of which shapes are insensitive to voltage changes. A buried heterostructure laser, emitting at λ ∼ 8.4 μm, demonstrates a high continuous-wave output power of 152 mW together with a high constant slope efficiency of 518 W/A at room temperature. In addition, the device performance is observed to be very insensitive to temperature change; T0-values of ∼ 306 K and constant slope efficiency over the wide temperature range, 280–400 K.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems

Achieving anisotropy in metamaterials made of dielectric cylindrical rods

L. Peng, Lixin Ran, and N. A. Mortensen

Appl. Phys. Lett. 96, 241108 (2010); http://dx.doi.org/10.1063/1.3453446 (3 pages) | Cited 8 times

Online Publication Date: 16 June 2010

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We show that anisotropic negative effective dispersion relation can be achieved in pure dielectric rod-type metamaterials by turning from the symmetry of a square lattice to that of a rectangular one. Theoretical predictions and conclusions are verified by both numerical calculations and computer based simulations. The proposed anisotropic metamaterial, is used to construct a refocusing slab lens and a subdiffraction hyperlens. The all-dielectric origin makes it more straightforward to address loss and scaling, thus facilitating future applications in both the terahertz and optical range.
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42.70.-a Optical materials
77.84.-s Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials
02.10.-v Logic, set theory, and algebra
02.60.-x Numerical approximation and analysis
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Optical transmission properties of C-shaped subwavelength waveguides on silicon

O. Lopatiuk-Tirpak, J. Ma, and S. Fathpour

Appl. Phys. Lett. 96, 241109 (2010); http://dx.doi.org/10.1063/1.3455839 (3 pages)

Online Publication Date: 16 June 2010

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Optical properties of C-shaped subwavelength waveguides in metallic (silver) films on silicon substrates are studied in the range of 0.6–6 μm. Power throughput and resonant wavelengths of several transmission modes are studied by varying the waveguide length (or metal thickness). Among three types of transmission modes, the fundamental order of the Fabry–Perot-type mode was shown to attain remarkably high power throughputs (as high as 12). With optimized design of the aperture, the resonant wavelength of this mode occurs in the 1–2 μm wavelength range, suggesting that such apertures can be utilized to achieve plasmonic-enhanced silicon photonic devices at telecommunication wavelengths.
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42.82.Et Waveguides, couplers, and arrays
42.79.Gn Optical waveguides and couplers
78.66.Bz Metals and metallic alloys

Gradient index metamaterial based on slot elements

Oliver Paul, Benjamin Reinhard, Bernd Krolla, René Beigang, and Marco Rahm

Appl. Phys. Lett. 96, 241110 (2010); http://dx.doi.org/10.1063/1.3453758 (3 pages) | Cited 9 times

Online Publication Date: 16 June 2010

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We present a gradient-index (GRIN) metamaterial based on an array of annular slots. The structure allows a large variation in the effective refractive index under normal-to-plane incidence and thus enables the construction of GRIN devices consisting of only a small number of functional layers. Using full-wave simulations, we demonstrate the annular slot concept by means of a three-unit-cell thin GRIN lens for the terahertz (THz) range. In the presented realizations, we achieved an index contrast of Δn = 1.5 resulting in a highly refractive flat lens which is suitable for focusing THz radiation to a spot size smaller than the wavelength.
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42.70.Nq Other nonlinear optical materials; photorefractive and semiconductor materials
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
42.79.Bh Lenses, prisms and mirrors
42.79.Ry Gradient-index (GRIN) devices

Diode lasers with asymmetric waveguide and improved beam properties

Jianfeng Chen, Gela Kipshidze, and Leon Shterengas

Appl. Phys. Lett. 96, 241111 (2010); http://dx.doi.org/10.1063/1.3452354 (3 pages) | Cited 3 times

Online Publication Date: 17 June 2010

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Fast axis beam divergence of 1.95 μm GaSb-based diode lasers was reduced to 42° of full-width-at-half-maximum. The beam properties were improved thanks to development of efficient laser heterostructure with asymmetric waveguide. Near field was expanded almost exclusively into n-cladding by reduction in the refractive index step at the corresponding heterointeraface. The related reduction in the band offset between waveguide core and n-cladding was balanced by introduction of the thin carrier stopper layer. Multimode 100 μm wide ridge waveguide lasers demonstrated continuous wave output power of about 1.5 W at 8 A at 20 °C.
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42.55.Px Semiconductor lasers; laser diodes
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)
71.20.Nr Semiconductor compounds
81.65.-b Surface treatments

Cu/p-Si Schottky barrier-based near infrared photodetector integrated with a silicon-on-insulator waveguide

M. Casalino, L. Sirleto, M. Iodice, N. Saffioti, M. Gioffrè, I. Rendina, and G. Coppola

Appl. Phys. Lett. 96, 241112 (2010); http://dx.doi.org/10.1063/1.3455339 (3 pages) | Cited 5 times

Online Publication Date: 17 June 2010

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In this letter, a near infrared all-silicon (all-Si) photodetector integrated into a silicon-on-insulator waveguide is demonstrated. The device is based on the internal photoemission effect through a metal/Si Schottky junction placed transversally to the optical field confined into the waveguide. The technological steps utilized to fabricate the device allow an efficiently monolithic integration with complementary metal-oxide semiconductor compatible structures. Preliminary results show a responsivity of 0.08 mA/W at 1550 nm with a reverse bias of 1 V and an efficient behavior both in C and L band. Finally, an estimation of bandwidth for GHz range is deduced.
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85.60.Gz Photodetectors (including infrared and CCD detectors)
84.40.Az Waveguides, transmission lines, striplines

One-step implementation of multiqubit conditional phase gating with nitrogen-vacancy centers coupled to a high-Q silica microsphere cavity

W. L. Yang, Z. Q. Yin, Z. Y. Xu, M. Feng, and J. F. Du

Appl. Phys. Lett. 96, 241113 (2010); http://dx.doi.org/10.1063/1.3455891 (3 pages) | Cited 17 times

Online Publication Date: 18 June 2010

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The diamond nitrogen-vacancy (NV) center is an excellent candidate for quantum information processing, whereas entangling separate NV centers is still of great experimental challenge. We propose a one-step conditional phase flip with three NV centers coupled to a whispering-gallery mode cavity by virtue of the Raman transition and smart qubit encoding. As decoherence is much suppressed, our scheme could work for more qubits. The experimental feasibility is justified.
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03.67.Lx Quantum computation architectures and implementations
03.67.Mn Entanglement measures, witnesses, and other characterizations
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