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14 Jun 2010

Volume 96, Issue 24, Articles (24xxxx)

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Appl. Phys. Lett. 96, 241101 (2010); http://dx.doi.org/10.1063/1.3449576 (3 pages)

Rui Chen, H. D. Sun, T. Wang, K. N. Hui, and H. W. Choi
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Structure and chemistry of the (111)Sc2O3/(0001) GaN epitaxial interface

X. Weng, W. Tian, D. G. Schlom, and E. C. Dickey

Appl. Phys. Lett. 96, 241901 (2010); http://dx.doi.org/10.1063/1.3454924 (3 pages) | Cited 4 times

Online Publication Date: 14 June 2010

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The structure and chemistry of the (111)Sc2O3/(0001) GaN epitaxial interface grown by molecular-beam epitaxy have been investigated. High-resolution transmission electron microscopy reveals an abrupt Sc2O3/GaN interface with a hexagonal misfit dislocation network. These dislocations have Burgers vectors of (a/3)〈11math0〉GaN and line directions parallel to 〈1math00〉GaN, with an average spacing of ∼ 3.8 nm. Scanning transmission electron microscopy and electron energy loss spectrometry reveal the intermixing of Sc, O, and N over a region with a width of ∼ 1.5 nm at the interface.
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68.35.Ct Interface structure and roughness
68.55.ag Semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
61.72.Ff Direct observation of dislocations and other defects (etch pits, decoration, electron microscopy, x-ray topography, etc.)
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

Charge-transfer absorption band in Zn1−xMxO (M: Co, Mn) investigated by means of photoconductivity, Ga doping, and optical measurements under pressure

S. G. Gilliland, J. A. Sans, J. F. Sánchez-Royo, G. Almonacid, and A. Segura

Appl. Phys. Lett. 96, 241902 (2010); http://dx.doi.org/10.1063/1.3454243 (3 pages) | Cited 6 times

Online Publication Date: 16 June 2010

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The nature of the charge-transfer absorption band in undoped and Ga-doped Zn1−xMxO (M: Co, Mn) thin films is investigated by means of photoconductivity and optical absorption measurements under pressure. Internal transitions in the crystal field split Co 3d shell do not contribute to the photoconductivity spectrum and have very low pressure coefficient. Broad absorption bands at photon energies just below the band gap in both ZnMnO and ZnCoO clearly contribute to the photoconductivity spectra, indicating that they create free carriers and are consequently charge-transfer transitions. Under pressure, charge transfer bands have a pressure coefficient close to or larger than the band gap, in contrast to the expected low or negative pressure coefficient in a valence-band-to-localized level transition. Finally, the expected Burstein–Moss shift in the fundamental edge of heavily Ga-doped samples of ZnMO is associated to a larger shift and intensity decrease in the pre-edge band, confirming that charge-transfer transitions in ZnMO should be ascribed to transitions from the Co or Mn 3d shell to the conduction band.
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71.70.Ch Crystal and ligand fields
78.66.Hf II-VI semiconductors
73.50.Pz Photoconduction and photovoltaic effects
78.56.-a Photoconduction and photovoltaic effects
73.21.-b Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems
61.72.uj III-V and II-VI semiconductors

The structure and growth direction of rare earth silicide nanowires on Si(100)

C. Eames, M. I. J. Probert, and S. P. Tear

Appl. Phys. Lett. 96, 241903 (2010); http://dx.doi.org/10.1063/1.3453865 (3 pages) | Cited 2 times

Online Publication Date: 18 June 2010

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The growth direction and the structure of rare earth silicide nanowires grown on the Si(100) surface have been calculated from first principles. The energies of the optimum structures show that a structure related to the tetragonal bulk phase is more favorable than the hexagonal model and that growth parallel to the dimer rows is lower in energy than growth across the dimer rows.
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61.46.Km Structure of nanowires and nanorods (long, free or loosely attached, quantum wires and quantum rods, but not gate-isolated embedded quantum wires)
81.07.Gf Nanowires
81.16.-c Methods of micro- and nanofabrication and processing

Contactless electroreflectance study of Fermi-level pinning at the surface of cubic GaN

R. Kudrawiec, E. Tschumak, J. Misiewicz, and D. J. As

Appl. Phys. Lett. 96, 241904 (2010); http://dx.doi.org/10.1063/1.3455907 (3 pages) | Cited 5 times

Online Publication Date: 18 June 2010

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Van Hoof structures C. Van Hoof, K. Deneffe, J. De Boeck, D. J. Arent, and G. Borghs, [Appl. Phys. Lett. 54, 608 (1989)] with various thicknesses of the undoped layer, for which a homogeneous built-in electric field is expected, were grown for studies of the Fermi-level pinning at the surface of cubic GaN. The built-in electric field in the undoped GaN layer was determined from contactless electroreflectance measurements of Franz–Keldysh oscillations. A good agreement between the determined and calculated electric field has been found for the Fermi-level located ∼ 0.4 eV below the conduction band at the surface.
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78.20.Jq Electro-optical effects
71.20.Nr Semiconductor compounds
78.66.Hf II-VI semiconductors
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