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21 Jun 2010

Volume 96, Issue 25, Articles (25xxxx)

Issue Cover Spotlight Figure

Appl. Phys. Lett. 96, 251901 (2010); http://dx.doi.org/10.1063/1.3455157 (3 pages)

Yongsam Kim, Ankit S. Disa, Timur E. Babakol, and Joel D. Brock
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Metal-cavity surface-emitting microlaser at room temperature

Chien-Yao Lu, Shu-Wei Chang, Shun Lien Chuang, Tim D. Germann, and Dieter Bimberg

Appl. Phys. Lett. 96, 251101 (2010); http://dx.doi.org/10.1063/1.3455316 (3 pages) | Cited 24 times

Online Publication Date: 21 June 2010

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We propose and realize a substrate-free metal-cavity surface-emitting microlaser with both top and sidewall metal and a bottom distributed Bragg reflector as the cavity structure. The transfer-matrix method is used to design the laser structure based on the round-trip resonance condition inside the cavity. The laser is 2.0 μm in diameter and 2.5 μm in height, and operates at room temperature with continuous-wave mode. Flip-bonding the device to a silicon substrate with a conductive metal provides efficient heat removal. A high characteristic temperature about 425 K is observed from 10 to 27 °C.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
42.60.Da Resonators, cavities, amplifiers, arrays, and rings
42.55.Sa Microcavity and microdisk lasers
42.79.Bh Lenses, prisms and mirrors

Role of mode coupling on transmission properties of subwavelength composite hole-patch structures

Changlei Wang, Jianqiang Gu, Jiaguang Han, Qirong Xing, Zhen Tian, Feng Liu, Lu Chai, Yanfeng Li, Minglie Hu, Qingyue Wang, Xinchao Lu, and Weili Zhang

Appl. Phys. Lett. 96, 251102 (2010); http://dx.doi.org/10.1063/1.3456377 (3 pages) | Cited 3 times

Online Publication Date: 21 June 2010

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We report the coupling between surface plasmons and dipole-localized surface plasmons in a composite hole-patch structure at terahertz frequencies. The coupling is found to be changed by increasing the inner patch size, which causes prominent resonance frequency shift in the enhanced transmission. The experimental results show good agreement with numerical simulation. The study clarifies well the nature of coupling between surface plasmons and dipole-localized surface plasmons and is thus of help to identify the role of surface plasmons in the enhanced transmission observed in subwavelength metallic structures.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

Enhancement of light extraction from GaN-based green light-emitting diodes using selective area photonic crystal

Ja-Yeon Kim, Min-Ki Kwon, Seong-Ju Park, Sang Hoon Kim, and Ki-Dong Lee

Appl. Phys. Lett. 96, 251103 (2010); http://dx.doi.org/10.1063/1.3454240 (3 pages) | Cited 5 times

Online Publication Date: 22 June 2010

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We report the development of a GaN-based green light-emitting diode (LED) with a selective area photonic crystal (SPC) structure, which was formed outside the p-bonding electrode on p-GaN. As a result, the optical output power of LEDs with SPC was enhanced by 78% compared to that without PC. In addition, the forward voltage, series resistance, and leakage current of LEDs with SPC were remarkably improved. These results show that the light extraction efficiency of green LEDs can be greatly increased using the SPC structure, with no degradation of electrical properties.
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85.60.Jb Light-emitting devices

High performance optical absorber based on a plasmonic metamaterial

Jiaming Hao, Jing Wang, Xianliang Liu, Willie J. Padilla, Lei Zhou, and Min Qiu

Appl. Phys. Lett. 96, 251104 (2010); http://dx.doi.org/10.1063/1.3442904 (3 pages) | Cited 70 times

Online Publication Date: 22 June 2010

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High absorption efficiency is particularly desirable at present for various microtechnological applications including microbolometers, photodectors, coherent thermal emitters, and solar cells. Here we report the design, characterization, and experimental demonstration of an ultrathin, wide-angle, subwavelength high performance metamaterial absorber for optical frequencies. Experimental results show that an absorption peak of 88% is achieved at the wavelength of ∼ 1.58 μm, though theoretical results give near perfect absorption.
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78.67.Bf Nanocrystals, nanoparticles, and nanoclusters
81.16.-c Methods of micro- and nanofabrication and processing
78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

Time-resolved analysis of catastrophic optical damage in 975 nm emitting diode lasers

Martin Hempel, Mathias Ziegler, Jens W. Tomm, Thomas Elsaesser, Nicolas Michel, and Michel Krakowski

Appl. Phys. Lett. 96, 251105 (2010); http://dx.doi.org/10.1063/1.3456388 (3 pages) | Cited 5 times

Online Publication Date: 22 June 2010

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Catastrophic optical damage (COD) is analyzed during single current pulse excitation of 975 nm emitting diode lasers. Power transients and thermal images are monitored during each pulse. The COD process is unambiguously related to the occurrence of a “thermal flash” of Planck’s radiation. We observe COD to ignite multiple times in subsequent pulses. Thermography allows for tracing a spatial motion of the COD site on the front facet of the devices. The time constant of power decay after the onset of COD has values from 400 to 2000 ns, i.e., an order of magnitude longer than observed for shorter-wavelength devices.
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42.55.Px Semiconductor lasers; laser diodes
42.60.By Design of specific laser systems
85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)
42.87.-d Optical testing techniques
42.65.Re Ultrafast processes; optical pulse generation and pulse compression

Tuning the photoluminescence characteristics with curvature for rolled-up GaAs quantum well microtubes

Ik Su Chun, Kevin Bassett, Archana Challa, and Xiuling Li

Appl. Phys. Lett. 96, 251106 (2010); http://dx.doi.org/10.1063/1.3456098 (3 pages) | Cited 6 times

Online Publication Date: 23 June 2010

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III-V microtubes and nanotubes are formed by a strain-induced self-rolling process. We report room-temperature photoluminescence (PL) characteristics of such microtubes with embedded GaAs quantum-well structures and wall thickness as thin as 38 nm. Rolled-up tubes show dramatic PL intensity enhancement compared to their planar counterparts. Holey tubes, formed using patterned membranes, display further increase in intensity implying better light extraction efficiency with the air holes. Systematic shift of PL peak position as a function of tube curvature, attributed to strain induced band structure change, is established.
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78.55.Cr III-V semiconductors
81.16.-c Methods of micro- and nanofabrication and processing
78.67.Ch Nanotubes
78.67.De Quantum wells
68.65.Fg Quantum wells

InAs/GaSb type-II superlattice structures and photodiodes grown by metalorganic chemical vapor deposition

Yong Huang, Jae-Hyun Ryou, Russell D. Dupuis, Adam Petschke, Martin Mandl, and Shun-Lien Chuang

Appl. Phys. Lett. 96, 251107 (2010); http://dx.doi.org/10.1063/1.3456386 (3 pages) | Cited 8 times

Online Publication Date: 23 June 2010

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We report on the characterization and performance of epitaxial structures and photodiodes based on InAs/GaSb type-II superlattices grown by metalorganic chemical vapor deposition. Interfacial layers were introduced at the superlattice interfaces to compensate the tensile strain and hence to improve the overall material quality of the superlattice structures. The optimal morphology and low strain was achieved via a combined interfacial layer scheme with InAsSb+InGaSb layers. Using this scheme, a p-i-n photodiode structure with a 360-period InAs/GaSb superlattice was grown on a GaSb substrate, which operates at 78 K with a cut-off wavelength of ∼ 8 μm and a peak responsivity of 0.6 A/W at ∼ 6 μm.
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81.05.Ea III-V semiconductors
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
85.60.Dw Photodiodes; phototransistors; photoresistors
68.60.Bs Mechanical and acoustical properties
68.35.Ct Interface structure and roughness

Continuous photocontrolled deformable membrane mirror

U. Bortolozzo, S. Bonora, J. P. Huignard, and S. Residori

Appl. Phys. Lett. 96, 251108 (2010); http://dx.doi.org/10.1063/1.3457443 (3 pages) | Cited 3 times

Online Publication Date: 24 June 2010

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We present a deformable mirror that is composed by a metalized membrane with a monolithic nonpixelated photoconductive Bi12SiO20 substrate. The assembly constitutes a continuous photocontrolled deformable mirror and is driven through suitable light intensity distributions illuminating the photoconductive element. The continuous deformation of the reflective surface provides an all-optical and dynamical control of the incoming wave front, without spatial segmentation and with a deformation as large as a few microns.
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42.79.Bh Lenses, prisms and mirrors

On chip, high-sensitivity thermal sensor based on high-Q polydimethylsiloxane-coated microresonator

Bei-Bei Li, Qing-Yan Wang, Yun-Feng Xiao, Xue-Feng Jiang, Yan Li, Lixin Xiao, and Qihuang Gong

Appl. Phys. Lett. 96, 251109 (2010); http://dx.doi.org/10.1063/1.3457444 (3 pages) | Cited 9 times

Online Publication Date: 25 June 2010

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A high-sensitivity thermal sensing is demonstrated by coating a layer of polydimethylsiloxane (PDMS) on the surface of a silica toroidal microresonator on a silicon wafer. Possessing high-Q whispering gallery modes (WGMs), the PDMS-coated microresonator is highly sensitive to the temperature change in the surroundings. We find that, when the PDMS layer becomes thicker, the WGM experiences a transition from redshift to blueshift with temperature increasing due to the negative thermal-optic coefficient of PDMS. The measured sensitivity (0.151 nm/K) is one order of magnitude higher than pure silica microcavity sensors. The ultrahigh resolution of the thermal sensor is also analyzed to reach 10−4 K.
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07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing
42.79.Pw Imaging detectors and sensors
07.10.Cm Micromechanical devices and systems

Photoemission from localized surface plasmons in fractal metal nanostructures

R. C. Word, T. Dornan, and R. Könenkamp

Appl. Phys. Lett. 96, 251110 (2010); http://dx.doi.org/10.1063/1.3457921 (3 pages) | Cited 8 times

Online Publication Date: 25 June 2010

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We use photoemission microscopy to characterize localized surface plasmon distributions in nanostructured gold layers on indium-tin-oxide/glass substrates. The Au films have a fractal dimension of ∼ 1.3 and smallest feature sizes of ∼ 100 nm. We use femtosecond laser pulses at a wavelength of ∼ 800 nm for the plasmon excitation. Photoelectron emission occurs by a three-photon process in localized areas of indium-tin-oxide with ∼ 70 nm diameter. In these areas the photoemission rate is enhanced several thousand fold compared to nonstructured surface areas. The results show that plasmon enhanced photoemission can be induced in a nonabsorbing material in proximity to a plasmon-active metal nanostructure.
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73.20.Mf Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
79.60.-i Photoemission and photoelectron spectra
73.22.Lp Collective excitations
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Reconfigurable electromagnetic band gap device using plasma as a localized tunable defect

J. Lo, J. Sokoloff, Th. Callegari, and J. P. Boeuf

Appl. Phys. Lett. 96, 251501 (2010); http://dx.doi.org/10.1063/1.3454778 (3 pages) | Cited 3 times

Online Publication Date: 21 June 2010

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Electromagnetic band gap (EBG) structures have interesting properties in terms of electromagnetic wave propagation. Using a plasma discharge in an EBG structure may increase its reconfigurability. The use of microplasma arrays in the design of EBG structures is however complex and may cause energy losses. In this paper, we show through experiments and simulations that EBG effects can be obtained in structures where a single discharge plasma is used to create a defect in a periodic structure of metallic rods.
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42.79.-e Optical elements, devices, and systems
52.77.-j Plasma applications

Highly efficient acceleration and collimation of high-density plasma using laser-induced cavity pressure

J. Badziak, S. Borodziuk, T. Pisarczyk, T. Chodukowski, E. Krousky, K. Masek, J. Skala, J. Ullschmied, and Yong-Joo Rhee

Appl. Phys. Lett. 96, 251502 (2010); http://dx.doi.org/10.1063/1.3457865 (3 pages) | Cited 8 times

Online Publication Date: 24 June 2010

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An efficient scheme of acceleration and collimation of dense plasma is proposed and examined. In the scheme, a target placed in a cavity coupled with a guiding channel is irradiated by a laser beam introduced into the cavity through a hole and accelerated along the channel by the pressure of the ablating plasma confined in the cavity. Using 1.315 μm, 0.3 ns laser pulse of energy up to 200 J and a thin CH target, it was shown that the energetic efficiency of acceleration in this scheme is an order of magnitude higher than in the case of conventional ablative acceleration.
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52.50.Jm Plasma production and heating by laser beams (laser-foil, laser-cluster, etc.)
52.25.-b Plasma properties
52.38.Kd Laser-plasma acceleration of electrons and ions
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Strain screening by mobile oxygen vacancies in SrTiO3

Yongsam Kim, Ankit S. Disa, Timur E. Babakol, and Joel D. Brock

Appl. Phys. Lett. 96, 251901 (2010); http://dx.doi.org/10.1063/1.3455157 (3 pages) | Cited 2 times

Online Publication Date: 21 June 2010

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Recently, Freedman et al. [Phys. Rev. B 80, 064108 (2009)] calculated the elastic dipole tensor for several types of point defects in SrTiO3 and showed that it is nearly traceless for oxygen vacancies. Thus, mobile oxygen vacancies are predicted to screen elastic strain fields. Here, we report detailed diffuse x-ray scattering measurements of bulk SrTiO3 crystals prepared with controlled oxygen vacancy distributions. We verify the traceless nature of the elastic dipole tensor of an oxygen vacancy and demonstrate both correlations between oxygen vacancies and elastic strain screening by oxygen vacancies.
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61.72.jd Vacancies

Correlation between dynamic flow and thermodynamic glass transition in metallic glasses

H. B. Ke, P. Wen, D. Q. Zhao, and W. H. Wang

Appl. Phys. Lett. 96, 251902 (2010); http://dx.doi.org/10.1063/1.3455337 (3 pages) | Cited 10 times

Online Publication Date: 21 June 2010

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We report the values of steps of heat capacity (ΔCp) during the glass transition in a variety of metallic glasses (MGs). It is found that ΔCp is around 13.69 J mol−1 K−1 and almost invariable for the MGs. Based on the Eyring’s theory [ N. Hirai and H. Eyring, J. Polym. Sci. 37, 51 (1959)] , the phenomenon corresponds to a critical reduced free volume value. This exhibits that the glass transition takes place when the reduced free volume approaches to ∼ 2.35% in the MG systems. The value, consistent with that of the yielding of MGs, confirms that temperature and stress are equivalent for fluidizing MGs. Our results give an implication to understanding the glass transition in MGs as a Lindemann-type melting behavior [ F. A. Lindemann, Z. Phys. 11, 609 (1910)] .
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64.70.pe Metallic glasses
61.43.Dq Amorphous semiconductors, metals, and alloys
65.60.+a Thermal properties of amorphous solids and glasses: heat capacity, thermal expansion, etc.
75.50.Kj Amorphous and quasicrystalline magnetic materials
65.20.-w Thermal properties of liquids
68.35.bj Amorphous semiconductors, glasses

Temperature-dependent Rabi rotation in semiconductor quantum dots

K.-M. Hung, W.-J. Hong, K.-J. Su, T.-H. Shieh, K.-Y. Wu, and H. H. Cheng

Appl. Phys. Lett. 96, 251903 (2010); http://dx.doi.org/10.1063/1.3456547 (3 pages)

Online Publication Date: 21 June 2010

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The dynamics of exciton coupling to photons and LO-phonons in a three-level quantum-dot system is studied using the Wigner–Weisskopf approach. An analytical solution to the system for a rectangular driving pulse is derived, and the wave function of an exciton is found to form a unit vector directed to the surface of an S2 Bloch hemisphere. For long decoherence times, the vector traces out a temperature (T)-dependent Rabi circle with increase pulse area. An increase in T does not deform the Rabi circle but shrinks its radius. Accordingly, a diverse representational scheme is proposed. These properties expand scenarios to T-dependent regimes.
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68.65.Hb Quantum dots (patterned in quantum wells)
71.35.-y Excitons and related phenomena

Influence of the GaN barrier thickness on the optical properties of InGaN/GaN multilayer quantum dot heterostructures

S. C. Davies, D. J. Mowbray, F. Ranalli, and T. Wang

Appl. Phys. Lett. 96, 251904 (2010); http://dx.doi.org/10.1063/1.3456392 (3 pages) | Cited 6 times

Online Publication Date: 22 June 2010

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A study of InGaN/GaN multiple layer quantum dot (QD) structures with varying barrier thicknesses is reported. With increasing barrier thickness both a redshift in the photoluminescence (PL) peak energy and increase in the PL decay lifetime is observed. This is attributed to an increase in the size of the internal electric field and the influence on the electronic structure via the quantum confined Stark effect. Theoretical surface integral potential calculations support this interpretation. A minimum barrier thickness of 4 nm appears to be required for the formation of separate homogeneous QD layers.
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78.67.Hc Quantum dots
78.55.Cr III-V semiconductors
78.20.Jq Electro-optical effects
73.21.La Quantum dots

Hydrogen–dopant interactions in SiGe and strained Si

L. Tsetseris, D. M. Fleetwood, R. D. Schrimpf, and S. T. Pantelides

Appl. Phys. Lett. 96, 251905 (2010); http://dx.doi.org/10.1063/1.3456395 (3 pages)

Online Publication Date: 22 June 2010

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The appearance of carrier traps and the deactivation of dopants are typical hydrogen-related phenomena that are of prime importance to the reliability of traditional Si-based devices. Here we probe with first-principles calculations, the dynamics of hydrogen as individual impurities or in complexes with dopants in strained Si (s-Si) and SiGe systems. We find that the charged state determines the tendency of hydrogen to be released from dopant sites and to shuttle between a SiGe substrate and a s-Si overlayer. In this way, the effect of hydrogen differs between accumulation and inversion cycles of s-Si and SiGe devices.
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61.72.S- Impurities in crystals
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
71.55.Cn Elemental semiconductors

Optical properties of InGaN quantum dots in monolithic pillar microcavities

K. Sebald, M. Seyfried, J. Kalden, J. Gutowski, H. Dartsch, C. Tessarek, T. Aschenbrenner, S. Figge, C. Kruse, D. Hommel, M. Florian, and F. Jahnke

Appl. Phys. Lett. 96, 251906 (2010); http://dx.doi.org/10.1063/1.3456376 (3 pages) | Cited 5 times

Online Publication Date: 23 June 2010

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The integration of InGaN quantum dots into GaN-based monolithic microcavities grown by metal-organic vapor-phase epitaxy is demonstrated. Microphotoluminescence spectra reveal distinct spectrally sharp emission lines around 2.73 eV, which can be attributed to the emission of single InGaN quantum dots. The samples are structured into airpost pillar microcavities. The longitudinal and transversal mode spectra of these cavities are in good agreement with theoretical calculations based on a vectorial transfer-matrix method. Quality factors up to Q = 280 have been achieved.
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78.55.Cr III-V semiconductors
78.66.Fd III-V semiconductors

Tunable positive temperature coefficient of resistivity in an electrically conducting polymer/graphene composite

Huan Pang, Yi-Chuan Zhang, Tao Chen, Bao-Qing Zeng, and Zhong-Ming Li

Appl. Phys. Lett. 96, 251907 (2010); http://dx.doi.org/10.1063/1.3457170 (3 pages) | Cited 9 times

Online Publication Date: 24 June 2010

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The graphene nanosheet (GNS)/ultrahigh molecular weight polyethylene composite with a two-dimensional conductive network of GNSs exhibits an increasing positive temperature coefficient (PTC) of resistivity while thermally treated at a certain temperature. This anomalous phenomenon is originated from the reduced viscosity of polymer matrix, crystallization induced local flow and weak interactions among the overlapping joints of GNSs, which allow GNSs to migrate to the polymer matrix, thus weakening the conductive paths and increasing the PTC intensity. A facile approach is accordingly developed to prepare a conductive polymer composite with a tunable PTC intensity.
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82.35.Cd Conducting polymers
61.41.+e Polymers, elastomers, and plastics
61.48.Gh Structure of graphene
81.05.ue Graphene
61.46.-w Structure of nanoscale materials
66.20.-d Viscosity of liquids; diffusive momentum transport

Visualization of Tm dopant atoms diffused out of GaN quantum dots

H. Okuno, J.-L. Rouvière, P.-H. Jouneau, P. Bayle-Guillemaud, and B. Daudin

Appl. Phys. Lett. 96, 251908 (2010); http://dx.doi.org/10.1063/1.3455893 (3 pages) | Cited 7 times

Online Publication Date: 24 June 2010

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GaN quantum dots doped with Tm atoms and embedded in AlN have been characterized by high-angle annular dark-field imaging using a scanning transmission electron microscope. Direct visualization of individual Tm atoms in AlN layers has been achieved. We have found that besides being present in GaN dots, Tm atoms also tend to segregate at AlN barriers. The Tm distribution is related to the capping mechanism of the dots with AlN. A visibility coefficient based on locally integrated, rather than peak, intensities is introduced to determine quantitatively the number of Tm atoms in a given atomic column. Experimental and simulated images show that this visibility presents a reduced sensitivity to the defocus or to the position of the Tm atom within the thin lamella.
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68.65.Hb Quantum dots (patterned in quantum wells)

Correlation between corrosion performance and surface wettability in ZrTiCuNiBe bulk metallic glasses

Y. B. Wang, H. F. Li, Y. F. Zheng, S. C. Wei, and M. Li

Appl. Phys. Lett. 96, 251909 (2010); http://dx.doi.org/10.1063/1.3429591 (3 pages) | Cited 8 times

Online Publication Date: 25 June 2010

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The corrosion properties of two Zr-based bulk metallic glass, Zr41Ti14Cu12Ni10Be23 (LM1) and Zr44Ti11Cu10Ni10Be25 (LM1b) were investigated by electrochemical measurements in simulated body fluid with pH value 7.4. With much lower current density and higher impedance values, as well as higher pitting potential, LM1b showed superior corrosion resistance to LM1. Under identical sample preparation and testing conditions, the difference in corrosion performance is found to relate closely to their surface wettability difference, as contact angle tests showed that LM1b is more hydrophobic than LM1. The excess free volume was measured and found having a close correlation with the wettability or the surface energy.
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81.65.Kn Corrosion protection
82.45.Bb Corrosion and passivation
68.08.Bc Wetting
68.03.Cd Surface tension and related phenomena
68.35.Md Surface thermodynamics, surface energies

Effect of doping and counterdoping on high-pressure phase transitions of silicon

J. J. Guo, D. Pan, X. Q. Yan, T. Fujita, and M. W. Chen

Appl. Phys. Lett. 96, 251910 (2010); http://dx.doi.org/10.1063/1.3457479 (3 pages) | Cited 3 times

Online Publication Date: 25 June 2010

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The influence of dopants and counterdopants on high-pressure phase transitions of silicon was investigated by high-pressure Raman microscopy. A small amount of dopants were found to dramatically influence the high pressure stability of silicon. The combination of doping and counterdoping provides an effective way to manipulate the critical pressures of the phase transitions, which offers unique insights on atomic mechanisms of high pressure phase transitions of Si.
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61.72.uf Ge and Si
68.35.Rh Phase transitions and critical phenomena
78.35.+c Brillouin and Rayleigh scattering; other light scattering

Elimination of threading dislocations in as-grown PbSe film on patterned Si(111) substrate using molecular beam epitaxy

Binbin Weng, Fanghai Zhao, Jiangang Ma, Guangzhe Yu, Jian Xu, and Zhisheng Shi

Appl. Phys. Lett. 96, 251911 (2010); http://dx.doi.org/10.1063/1.3457863 (3 pages) | Cited 3 times

Online Publication Date: 25 June 2010

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A high-quality as-grown PbSe film with a record low threading dislocation density of 9×105 cm−2 on patterned Si(111) substrate has been obtained using molecular beam epitaxy. The mechanisms leading to the remarkable reduction in threading dislocation density are analyzed. Based on the analysis, further reduction in dislocation density is anticipated. Materials with such low dislocation density should significantly improve the Si-based IV-VI group device performance.
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68.55.A- Nucleation and growth
61.72.Hh Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.)
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Temperature dependence of the nonlinear plasma resonance in gated two-dimensional semiconductor conduction channels

S. Rudin

Appl. Phys. Lett. 96, 252101 (2010); http://dx.doi.org/10.1063/1.3455993 (3 pages) | Cited 2 times

Online Publication Date: 21 June 2010

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In the Dyakonov–Shur detector [ IEEE Trans. Electron Devices 43, 380 (1996) ] a short channel high electron mobility transistor is used for the detection of electromagnetic radiation in the low terahertz range. The quality of the plasma resonance utilized in such device is strongly temperature dependent. Starting with the Boltzmann equation, we derived the viscous hydrodynamic model with temperature dependent transport coefficients and obtained the temperature dependence of the quality factor of the resonance. We find that in high mobility channels the quality of the resonance is strongly limited by the viscosity of the electron fluid.
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85.30.Tv Field effect devices
05.60.-k Transport processes
66.20.-d Viscosity of liquids; diffusive momentum transport

Interplay of amorphous silicon disorder and hydrogen content with interface defects in amorphous/crystalline silicon heterojunctions

T. F. Schulze, H. N. Beushausen, C. Leendertz, A. Dobrich, B. Rech, and L. Korte

Appl. Phys. Lett. 96, 252102 (2010); http://dx.doi.org/10.1063/1.3455900 (3 pages) | Cited 19 times

Online Publication Date: 22 June 2010

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We analyze the dependence of the interface defect density Dit in amorphous/crystalline silicon (a-Si:H/c-Si) heterojunctions on the microscopic properties of ultrathin (10 nm) undoped a-Si:H passivation layers. It is shown that the hydrogen bonding and network disorder, probed by infrared- and photoelectron spectroscopy, govern the initial Dit and its behavior upon a short thermal treatment at 200 °C. While the initial Dit is determined by the local and nonequilibrated interface structure, the annealed Dit is defined by the bulk a-Si:H network strain. Thus it appears that the equilibrated a-Si:H/c-Si interface does not possess unique electronic properties but is governed by the a-Si:H bulk defects.
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81.05.Cy Elemental semiconductors
71.55.Cn Elemental semiconductors
78.30.Am Elemental semiconductors and insulators
78.66.Db Elemental semiconductors and insulators
68.35.Ct Interface structure and roughness
81.40.Gh Other heat and thermomechanical treatments
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