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21 Jun 2010

Volume 96, Issue 25, Articles (25xxxx)

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Appl. Phys. Lett. 96, 251901 (2010); http://dx.doi.org/10.1063/1.3455157 (3 pages)

Yongsam Kim, Ankit S. Disa, Timur E. Babakol, and Joel D. Brock
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Nonpolar cubic AlGaN/GaN heterojunction field-effect transistor on Ar+ implanted 3C–SiC (001)

E. Tschumak, R. Granzner, J. K. N. Lindner, F. Schwierz, K. Lischka, H. Nagasawa, M. Abe, and D. J. As

Appl. Phys. Lett. 96, 253501 (2010); http://dx.doi.org/10.1063/1.3455066 (3 pages) | Cited 5 times

Online Publication Date: 21 June 2010

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A heterojunction field-effect transistor (HFET) was fabricated of nonpolar cubic AlGaN/GaN grown on Ar+ implanted 3C–SiC (001) by molecular beam epitaxy. The device shows a clear field effect at positive bias voltages with Vth = 0.6 V. The HFET output characteristics were calculated using ATLAS simulation program. The electron channel at the cubic AlGaN/GaN interface was detected by room temperature capacitance-voltage measurements.
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85.30.Tv Field effect devices
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
61.72.U- Doping and impurity implantation

Effects of fluorine incorporation into HfO2 gate dielectrics on InP and In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistors

Yen-Ting Chen, Han Zhao, Yanzhen Wang, Fei Xue, Fei Zhou, and Jack C. Lee

Appl. Phys. Lett. 96, 253502 (2010); http://dx.doi.org/10.1063/1.3457388 (3 pages) | Cited 7 times

Online Publication Date: 23 June 2010

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In this work, the effects of fluorine (F) incorporation on electrical characteristics of HfO2/InP and HfO2/In0.53Ga0.47As gate stack are presented. F had been introduced into HfO2 gate dielectric by postgate CF4 plasma treatment, which was confirmed by x-ray photoelectron spectroscopy analysis and a secondary ion mass spectrometry technique. Compared to the control sample, fluorinated samples had great improvements in subthreshold swing, hysteresis, the normalized extrinsic transconductance, and the normalized drain current. These improvements can be attributed to the reduction in fixed charge in the HfO2 bulk and less interface trap density at the HfO2/III–V interface.
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85.30.Tv Field effect devices
79.60.Bm Clean metal, semiconductor, and insulator surfaces
82.80.Ms Mass spectrometry (including SIMS, multiphoton ionization and resonance ionization mass spectrometry, MALDI)
82.80.Pv Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.)
77.80.Dj Domain structure; hysteresis
73.20.-r Electron states at surfaces and interfaces
73.61.Ey III-V semiconductors

Charge-density depinning at metal contacts of graphene field-effect transistors

Ryo Nouchi and Katsumi Tanigaki

Appl. Phys. Lett. 96, 253503 (2010); http://dx.doi.org/10.1063/1.3456383 (3 pages) | Cited 18 times

Online Publication Date: 24 June 2010

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An anomalous distortion is often observed in the transfer characteristics of graphene field-effect transistors. We fabricate graphene transistors with ferromagnetic metal electrodes, which reproducibly display distorted transfer characteristics, and show that the distortion is caused by metal-graphene contacts with no charge-density pinning effect. The pinning effect, where the gate voltage cannot tune the charge density of graphene at the metal electrodes, has been experimentally observed; however, a pinning-free interface is achieved with easily-oxidizable metals. The distortion should be a serious problem for flexible electronic devices with graphene.
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85.30.Tv Field effect devices

Miniaturized superconducting metamaterials for radio frequencies

Cihan Kurter, John Abrahams, and Steven M. Anlage

Appl. Phys. Lett. 96, 253504 (2010); http://dx.doi.org/10.1063/1.3456524 (3 pages) | Cited 8 times

Online Publication Date: 24 June 2010

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We have developed a low-loss, ultrasmall radio frequency (rf) metamaterial operating at ∼ 76 MHz. This miniaturized medium is made up of planar spiral elements with diameter as small as ∼ λ/658 (λ is the free space wavelength), fashioned from Nb thin films on quartz substrates. The transmission data are examined below and above the superconducting transition temperature of Nb for both a single spiral and a one dimensional array. The validity of the design is tested through numerical simulations and good agreement is found. We discuss how superconductors enable such a compact design in the rf with high loaded-quality factor (in excess of 5000), which is in fact difficult to realize with ordinary metals.
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74.78.-w Superconducting films and low-dimensional structures
74.70.Ad Metals; alloys and binary compounds (including A15, MgB2, etc.)
85.25.-j Superconducting devices
74.10.+v Occurrence, potential candidates
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