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21 Jun 2010

Volume 96, Issue 25, Articles (25xxxx)

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Appl. Phys. Lett. 96, 251901 (2010); http://dx.doi.org/10.1063/1.3455157 (3 pages)

Yongsam Kim, Ankit S. Disa, Timur E. Babakol, and Joel D. Brock
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Magnetodielectric effect in EuZrO3

T. Kolodiazhnyi, K. Fujita, L. Wang, Y. Zong, K. Tanaka, Y. Sakka, and E. Takayama-Muromachi

Appl. Phys. Lett. 96, 252901 (2010); http://dx.doi.org/10.1063/1.3456730 (3 pages) | Cited 10 times

Online Publication Date: 21 June 2010

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Following recent report on antiferromagnetic ordering in EuZrO3 we performed dielectric measurements of this material as a function of temperature and magnetic field. Dielectric constant of dense EuZrO3 ceramics is 30.1 at 300 K. It gradually decreases upon cooling without any quantum paraelectric behavior; however, below TN = 4.1 K it shows a pronounced drop that qualitatively resembles that observed in EuTiO3. We report that dielectric constant of EuZrO3 is magnetic field dependent. The magnitude of the magnetodielectric effect in both EuTiO3 and EuZrO3 is discussed in the light of the recently proposed coupling of the Eu–O–Eu superexchange interactions with electrons involved in partially covalent Ti(Zr)–O bond.
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75.85.+t Magnetoelectric effects, multiferroics
75.50.Ee Antiferromagnetics
75.30.Et Exchange and superexchange interactions
77.84.Cg PZT ceramics and other titanates
77.22.Ch Permittivity (dielectric function)

Effect of B-site Al-doping on electric polarization in DyMnO3

N. Zhang, K. F. Wang, S. J. Luo, T. Wei, X. W. Dong, S. Z. Li, J. G. Wan, and J.-M. Liu

Appl. Phys. Lett. 96, 252902 (2010); http://dx.doi.org/10.1063/1.3453869 (3 pages) | Cited 5 times

Online Publication Date: 21 June 2010

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We investigate the effect of Al-doping on the multiferroicity of DyMn1−xAlxO3. It is indicated that a slight doping (0.005 ≤ x ≤ 0.01) can significantly enhance the electric polarization which will be suppressed as x>0.03. The possible mechanism for the polarization enhancement is the rearrangement of the Mn spiral spin order upon the Al-doping. Our work demonstrates that the ferroelectricity of DyMnO3 is sensitive to the B-site nonmagnetic doping, allowing an unusual enhancement of the electric polarization.
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77.80.-e Ferroelectricity and antiferroelectricity

Nanoscale domains in strained epitaxial BiFeO3 thin Films on LaSrAlO4 substrate

Zuhuang Chen, Lu You, Chuanwei Huang, Yajun Qi, Junling Wang, Thirumany Sritharan, and Lang Chen

Appl. Phys. Lett. 96, 252903 (2010); http://dx.doi.org/10.1063/1.3456729 (3 pages) | Cited 16 times

Online Publication Date: 23 June 2010

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BiFeO3 thin films with various thicknesses were grown epitaxially on (001) LaSrAlO4 single crystal substrates using pulsed laser deposition. High resolution x-ray diffraction measurements revealed that a tetragonal-like phase with c-lattice constant ∼ 4.65 Å is stabilized by a large misfit strain. Besides, a rhombohedral-like phase with c-lattice constant ∼ 3.99 Å was also detected at film thickness of ∼ 50 nm and above to relieve large misfit strains. In-plane piezoelectric force microscopy studies showed clear signals and self-assembled nanoscale stripe domain structure for the tetragonal-like regions. These findings suggest a complex picture of nanoscale domain patterns in BiFeO3 thin films subjected to large compressive strains.
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77.55.Nv Multiferroic/magnetoelectric films
77.55.Px Epitaxial and superlattice films
68.60.Bs Mechanical and acoustical properties
81.16.Dn Self-assembly
62.20.F- Deformation and plasticity
81.40.Lm Deformation, plasticity, and creep
77.80.-e Ferroelectricity and antiferroelectricity
81.15.Fg Pulsed laser ablation deposition

Enhanced dielectric constant and fatigue-resistance of PbZr0.4Ti0.6O3 capacitor with magnetic intermetallic FePt top electrode

B. T. Liu, J. W. Zhao, X. H. Li, Y. Zhou, F. Bian, X. Y. Wang, Q. X. Zhao, Y. L. Wang, Q. L. Guo, L. X. Wang, and X. Y. Zhang

Appl. Phys. Lett. 96, 252904 (2010); http://dx.doi.org/10.1063/1.3457382 (3 pages) | Cited 4 times

Online Publication Date: 23 June 2010

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Both FePt/PbZr0.4Ti0.6O3(PZT)/Pt and Pt/PZT/Pt ferroelectric capacitors have been fabricated on Si substrates. It is found that up to 109 switching cycles, the FePt/PZT/Pt capacitor, measured at 50 kHz, with polarization decreased by 57%, is superior to the Pt/PZT/Pt capacitor by 82%, indicating that an intermetallic FePt top electrode can also improve the fatigue-resistance of a PZT capacitor. Maximum dielectric constants are 980 and 770 for PZT capacitors with FePt and Pt, respectively. This is attributed to the interface effect between PZT film and the top electrode since the interfacial capacitance of FePt/PZT is 3.5 times as large as that of Pt/PZT interface.
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77.84.Cg PZT ceramics and other titanates
77.55.fg Pb(Zr,Ti)O3-based films
77.80.-e Ferroelectricity and antiferroelectricity
77.22.Ch Permittivity (dielectric function)
77.22.Ej Polarization and depolarization
81.40.Np Fatigue, corrosion fatigue, embrittlement, cracking, fracture, and failure

Effects of electrodes and space charges on the tunneling electroresistance in the ferroelectric tunnel junction with a SrTiO3/BaTiO3 composite barrier

Yin-Zhong Wu, Sheng Ju, and Zhen-Ya Li

Appl. Phys. Lett. 96, 252905 (2010); http://dx.doi.org/10.1063/1.3457451 (3 pages) | Cited 6 times

Online Publication Date: 23 June 2010

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Using the lattice model for strained nanoscale ferroelectric films and quantum tunneling theory, we present a theoretical investigation of tunneling electroresistance (TER) in the ferroelectric tunnel junction (FTJ) with a SrTiO3/BaTiO3 composite barrier. The exact profile of local polarizations within the composite barrier is calculated from first principles. It is found that the TER will sensitively depend on the choice of electrode with the increase in SrTiO3 barrier’s thickness. The space charges, which exist at the interface between the two barriers, will enhance the TER, and provide an effective approach to achieving large TER in FTJs.
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73.40.Gk Tunneling
77.22.Jp Dielectric breakdown and space-charge effects
77.55.fe BaTiO3-based films
77.80.-e Ferroelectricity and antiferroelectricity
77.22.Ej Polarization and depolarization
77.84.Lf Composite materials

Rigorous extraction tunability of Si-integrated Ba0.3Sr0.7TiO3 thin film up to 60 GHz

Freddy Ponchel, Jean-Fançois Legier, Caroline Soyer, Denis Rémiens, Jean Midy, Tuami Lasri, and Guillaume Guéguan

Appl. Phys. Lett. 96, 252906 (2010); http://dx.doi.org/10.1063/1.3454772 (3 pages) | Cited 7 times

Online Publication Date: 23 June 2010

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400-nm-thick Ba0.3Sr0.7TiO3 thin films are deposited on high resistivity silicon by in situ radio frequency magnetron sputtering. Coplanar waveguides with 1 μm slot width are designed, with accurate knowledge frequency losses behavior, to determine ferroelectric thin-films properties up to 60 GHz. Permittivity, loss tangent, and tunability are extracted through measurements and home made finite element analysis. Tunability of 33% and 29%, with 30 V maximum applied voltage (electric field of 300 kV/cm), are measured at 5 GHz and 60 GHz, respectively, while the dielectric losses evolve from 0.5% to 5%. A brief highlight is proposed about tunable silicon integrated quarter wavelength transformer potentialities for impedance matching.
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77.55.fp Other ferroelectric films
73.61.Ng Insulators
68.55.A- Nucleation and growth
77.22.Gm Dielectric loss and relaxation
77.80.-e Ferroelectricity and antiferroelectricity
77.22.Ch Permittivity (dielectric function)
81.15.Cd Deposition by sputtering

Arsenic decapping and half cycle reactions during atomic layer deposition of Al2O3 on In0.53Ga0.47As(001)

Byungha Shin, Jonathon B. Clemens, Michael A. Kelly, Andrew C. Kummel, and Paul C. McIntyre

Appl. Phys. Lett. 96, 252907 (2010); http://dx.doi.org/10.1063/1.3452336 (3 pages) | Cited 14 times

Online Publication Date: 24 June 2010

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In situ x-ray photoelectron spectroscopy was performed during thermal desorption of a protective As layer and subsequent atomic layer deposition (ALD) of Al2O3 on In0.53Ga0.47As(001). H2O dosing on the As-decapped surface caused formation of As oxides and As hydroxides, which were reduced by a subsequent trimethylaluminum (TMA) pulse. However, when a TMA pulse was performed first, the In0.53Ga0.47As(001) surface did not oxidize during subsequent ALD cycles, suggesting passivation by TMA adsorption at water-reactive sites. Scanning tunneling microscopy performed on a structurally-similar InAs(001) surface after H2O dosing revealed that surface defects are created by displacement of surface As atoms during oxidation. These surface defects act as interface states, consistent with the inferior capacitance-voltage characteristics of H2O-first ALD-Al2O3 capacitors compared to TMA-first samples.
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81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
81.65.Rv Passivation
81.65.Mq Oxidation
68.55.A- Nucleation and growth

Structural evidence for the nonmonotonic trend of TC in tetragonal PbTiO3BiScO3 solid solutions

Jun Chen, Krishna Nittala, Jacob L. Jones, Penghao Hu, and Xianran Xing

Appl. Phys. Lett. 96, 252908 (2010); http://dx.doi.org/10.1063/1.3456389 (3 pages) | Cited 5 times

Online Publication Date: 24 June 2010

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High-TC piezoelectric (1−x)PbTiO3xBiScO3 shows a nonmonotonic trend of TC in the tetragonal phase with respect to content of BiScO3. To understand this behavior, the structure of (1−x)PbTiO3xBiScO3 solid solutions is studied by means of neutron powder diffraction. The cation displacements of Pb/Bi and Ti/Sc exhibit a coupling property and a different impact by the substitution content of BiScO3. Its nonmonotonic trend of TC is quantitatively related to the calculated spontaneous polarization in the whole tetragonal range. The unique role of Bi-substitution not only contributes to enhance the component of polarization of Pb/Bi but also to increase the TC.
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77.65.-j Piezoelectricity and electromechanical effects
77.84.Cg PZT ceramics and other titanates
77.22.Ej Polarization and depolarization
64.70.K- Solid-solid transitions
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