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21 Jun 2010

Volume 96, Issue 25, Articles (25xxxx)

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Appl. Phys. Lett. 96, 251901 (2010); http://dx.doi.org/10.1063/1.3455157 (3 pages)

Yongsam Kim, Ankit S. Disa, Timur E. Babakol, and Joel D. Brock
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Temperature dependence of the nonlinear plasma resonance in gated two-dimensional semiconductor conduction channels

S. Rudin

Appl. Phys. Lett. 96, 252101 (2010); http://dx.doi.org/10.1063/1.3455993 (3 pages) | Cited 2 times

Online Publication Date: 21 June 2010

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In the Dyakonov–Shur detector [ IEEE Trans. Electron Devices 43, 380 (1996) ] a short channel high electron mobility transistor is used for the detection of electromagnetic radiation in the low terahertz range. The quality of the plasma resonance utilized in such device is strongly temperature dependent. Starting with the Boltzmann equation, we derived the viscous hydrodynamic model with temperature dependent transport coefficients and obtained the temperature dependence of the quality factor of the resonance. We find that in high mobility channels the quality of the resonance is strongly limited by the viscosity of the electron fluid.
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85.30.Tv Field effect devices
05.60.-k Transport processes
66.20.-d Viscosity of liquids; diffusive momentum transport

Interplay of amorphous silicon disorder and hydrogen content with interface defects in amorphous/crystalline silicon heterojunctions

T. F. Schulze, H. N. Beushausen, C. Leendertz, A. Dobrich, B. Rech, and L. Korte

Appl. Phys. Lett. 96, 252102 (2010); http://dx.doi.org/10.1063/1.3455900 (3 pages) | Cited 19 times

Online Publication Date: 22 June 2010

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We analyze the dependence of the interface defect density Dit in amorphous/crystalline silicon (a-Si:H/c-Si) heterojunctions on the microscopic properties of ultrathin (10 nm) undoped a-Si:H passivation layers. It is shown that the hydrogen bonding and network disorder, probed by infrared- and photoelectron spectroscopy, govern the initial Dit and its behavior upon a short thermal treatment at 200 °C. While the initial Dit is determined by the local and nonequilibrated interface structure, the annealed Dit is defined by the bulk a-Si:H network strain. Thus it appears that the equilibrated a-Si:H/c-Si interface does not possess unique electronic properties but is governed by the a-Si:H bulk defects.
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81.05.Cy Elemental semiconductors
71.55.Cn Elemental semiconductors
78.30.Am Elemental semiconductors and insulators
78.66.Db Elemental semiconductors and insulators
68.35.Ct Interface structure and roughness
81.40.Gh Other heat and thermomechanical treatments

Temperature dependence of electron concentration and mobility in n-GaN measured up to 1020 K

H. Tokuda, K. Kodama, and M. Kuzuhara

Appl. Phys. Lett. 96, 252103 (2010); http://dx.doi.org/10.1063/1.3456560 (3 pages) | Cited 1 time

Online Publication Date: 22 June 2010

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Temperature dependence of Hall electron concentration and mobility in n-GaN has been measured up to 1020 K. The electron concentration increased monotonically with temperature and did not saturate. The measured values were fitted with the calculated ones for the whole temperature range. It is found that following two assumptions have to be made in order to obtain the best fit for both electron concentration and mobility: (i) two donor levels and one acceptor level (including dislocation) have to be taken into account; and (ii) one donor level lies in the conduction band. The obtained results in this study will contribute to the design of GaN devices operating at high temperatures.
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81.05.Ea III-V semiconductors
73.61.Ey III-V semiconductors
68.55.Ln Defects and impurities: doping, implantation, distribution, concentration, etc.
71.55.Eq III-V semiconductors
72.20.My Galvanomagnetic and other magnetotransport effects
73.50.Dn Low-field transport and mobility; piezoresistance

Nonvolatile triode switch using electrochemical reaction in copper sulfide

Toshitsugu Sakamoto, Noriyuki Iguchi, and Masakazu Aono

Appl. Phys. Lett. 96, 252104 (2010); http://dx.doi.org/10.1063/1.3457861 (3 pages) | Cited 7 times

Online Publication Date: 23 June 2010

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The nonvolatile switch with its compact size enhances the functionality and the performance of large-scale integrated circuits. We have demonstrated a nonvolatile resistive switch with a triode of source, drain, and gate electrodes. A conduction path forms or dissolves in a solid-state ionic conductor via an electrochemical reaction, which results in turning the switch on or off. The reaction is controlled by a biasing voltage of the gate, which is separated from the conduction path by the ionic conductor. Then, the current required to turn the switch on or off is small (<2 μA). Each conductance state is nonvolatile and the ON/OFF current ratio is more than 104. We also confirm a metal precipitate between two electrodes by using element analysis.
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84.32.Dd Connectors, relays, and switches
84.47.+w Vacuum tubes

Modeling and simulation of uniaxial strain effects in armchair graphene nanoribbon tunneling field effect transistors

Jiahao Kang, Yu He, Jinyu Zhang, Xinxin Yu, Ximeng Guan, and Zhiping Yu

Appl. Phys. Lett. 96, 252105 (2010); http://dx.doi.org/10.1063/1.3456533 (3 pages) | Cited 4 times

Online Publication Date: 24 June 2010

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In this paper, we perform a modeling and simulation study on strained armchair graphene nanoribbon (AGNR). Two uniaxial strain models based on a tight binding method are compared with results from first-principles calculation. Tunneling field effect transistors (TFETs) with channels made of strained AGNR of different widths are modeled and simulated by a ballistic quantum transport model based on nonequilibrium Green’s function and nonparabolic effective mass approximation. Compared with TFETs with narrow AGNR, those with strained wide AGNR can achieve better device performance.
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85.75.Hh Spin polarized field effect transistors

Internal electric field influence on tunneling anisotropic magnetoresistance in epitaxial ferromagnet/n-GaAs junctions

Tetsuya Uemura, Masanobu Harada, Ken-ichi Matsuda, and Masafumi Yamamoto

Appl. Phys. Lett. 96, 252106 (2010); http://dx.doi.org/10.1063/1.3456558 (3 pages) | Cited 6 times

Online Publication Date: 24 June 2010

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A strong voltage-dependent tunneling anisotropic magnetoresistance (TAMR) effect was observed in a fully epitaxial Co2MnSi/n-GaAs junction and a Co50Fe50/n-GaAs junction. Angular dependence of the tunnel resistance showed uniaxial-type anisotropic tunnel resistance between the [110] and [1math0] directions in the (001) plane. The voltage at which the TAMR effect was suppressed was close to that at which the differential conductance reached a minimum in both samples, suggesting that the strength and/or the sign of the internal electric field at the Co2MnSi/n-GaAs and Co50Fe50/n-GaAs junctions could be related to the voltage-dependent TAMR effect through spin-orbit interaction.
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73.40.Ns Metal-nonmetal contacts
71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect
73.40.Lq Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

Electrostatic charge accumulation versus electrochemical doping in SrTiO3 electric double layer transistors

K. Ueno, H. Shimotani, Y. Iwasa, and M. Kawasaki

Appl. Phys. Lett. 96, 252107 (2010); http://dx.doi.org/10.1063/1.3457785 (3 pages) | Cited 10 times

Online Publication Date: 25 June 2010

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In electric double layer transistors with SrTiO3 single crystals, we found distinct differences between electrostatic charge accumulation and electrochemical reaction depending on bias voltages. In contrast to the reversible electrostatic process below 3.7 V with a maximum sheet charge carrier density, nS, of 1014 cm−2, the electrochemical process causes persistent conduction even after removal of the gate bias above 3.75 V. nS reached 1015 cm−2 at 5 V, and the electron mobility at 2 K was as large as 104 cm2/V s. This persistent conduction originates from defect formation within a few micrometers depth of SrTiO3.
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85.30.Tv Field effect devices
82.45.-h Electrochemistry and electrophoresis
61.72.up Other materials

Compositional variation of nearly lattice-matched InAlGaN alloys for high electron mobility transistors

T. Lim, R. Aidam, L. Kirste, P. Waltereit, R. Quay, S. Müller, and O. Ambacher

Appl. Phys. Lett. 96, 252108 (2010); http://dx.doi.org/10.1063/1.3456561 (3 pages) | Cited 4 times

Online Publication Date: 25 June 2010

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Quaternary InAlGaN semiconductors with AlN mole fractions between 40% and 81% and respective InN contents of 7% and 19% including InAlN as a ternary border case have been grown by plasma-assisted molecular beam epitaxy. The electron mobility in InAlGaN-based heterostructures increases with Ga concentration in the barrier up to 1460 cm2/V s at a sheet electron density of 1.9×1013 cm−2. An advanced spacer comprising an AlN/GaN/AlN triple-layer sequence is inserted between the GaN-buffer and the InAlGaN-barrier. Transistors with thin quaternary barrier show a large current density of 2.3 A/mm and an excellent transconductance of 675 mS/mm.
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73.61.Ey III-V semiconductors
85.30.Tv Field effect devices
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
68.55.ag Semiconductors
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