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Applied Physics Letters / Volume 96 / Issue 26 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 96, 261102 (2010); http://dx.doi.org/10.1063/1.3455104 (3 pages)

Free-standing AlxGa1−xAs heterostructures by gas-phase etching of germanium

Garrett D. Cole1, Yu Bai2, Markus Aspelmeyer1, and Eugene A. Fitzgerald2

1Fakultät für Physik, Universität Wien, Boltzmanngasse 5, A-1090 Vienna, Austria
2Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA

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(Received 11 April 2010; accepted 25 May 2010; published online 28 June 2010)

We outline a facile fabrication technique for the realization of free-standing AlxGa1−xAs heterostructures of arbitrary aluminum content. Utilizing xenon difluoride (XeF2) we rapidly and selectively remove a sacrificial germanium (Ge) underlayer in a room temperature gas-phase etching procedure. We demonstrate two possibilities for exploiting this unique process: (1) bulk micromachining of a suspended high-frequency low-dissipation micro-optomechanical resonator consisting of an epitaxial GaAs/AlAs multilayer grown on a Ge substrate and (2) epitaxial lift-off of a GaAs film via removal of an embedded Ge sacrificial layer, resulting in lateral etch rates up to 3 mm/h and a conservative selectivity of ∼ 106.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

aluminium compounds, etching, gallium arsenide, III-V semiconductors, micromachining, semiconductor epitaxial layers

PACS

  • 81.65.Cf

    Surface cleaning, etching, patterning

  • 81.16.-c

    Methods of micro- and nanofabrication and processing

  • 81.05.Ea

    III-V semiconductors

  • 68.55.ag

    Semiconductors

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3455104

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    E. Yablonovitch, T. Gmitter, J. P. Harbison, and R. Bhat, Appl. Phys. Lett. 51, 2222 (1987)APPLAB000051000026002222000001.

    G. D. Cole, S. Gröblacher, K. Gugler, S. Gigan, and M. Aspelmeyer, Appl. Phys. Lett. 92, 261108 (2008)APPLAB000092000026261108000001.

    H. F. Winters and F. A. Houle, J. Appl. Phys. 54, 1218 (1983)JAPIAU000054000003001218000001.

    H. F. Winters and J. W. Coburn, Appl. Phys. Lett. 34, 70 (1979)APPLAB000034000001000070000001.

    S. M. Ting and E. A. Fitzgerald, J. Appl. Phys. 87, 2618 (2000)JAPIAU000087000005002618000001.

    J. F. Geisz, D. J. Friedman, J. S. Ward, A. Duda, W. J. Olavarria, T. E. Moriarty, J. T. Kiehl, M. J. Romero, A. G. Norman, and K. M. Jones, Appl. Phys. Lett. 93, 123505 (2008)APPLAB000093000012123505000001.


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