Reduction in the efficiency droop effect of a light-emitting diode through surface plasmon coupling

Lu, Chih-Feng; Liao, Che-Hao; Chen, Chih-Yen; Hsieh, Chieh; Kiang, Yean-Woei; Yang, C. C.

doi:doi:10.1063/1.3459151

Volume/Page
Keyword
DOI
Citation
Advanced

Volume: Page/Article:

Search Content Type

article doi:

Citation:

Femtosecond laser near-field nanoablation patterning using Mie resonance high dielectric constant particle with small size parameter

We demonstrate near-field nanohole patterning using a Mie resonance, small size parameter particle for nanofabrication technology regardless of substrate’s refractive index. Maximal enhancement factor and nearly smallest spot diameter among the same size dielectric particles are simultaneously obtainable on both low-refractive-index SiO2 and high-refractive-index Si substrates with a 200 nm particle of magnetic quadrupole resonance scattering mode (n ∼ 2.7) at 400 nm excitation wavelength. Circ...

Enhancement of electroluminescence in GaN-based light-emitting diodes by metallic nanoparticles

The enhanced electroluminescence of GaN-based light-emitting diodes (LEDs) with noble metallic nanoparticles (MNPs) is demonstrated. The sample with well-designed Ag MNPs has shown the best performance enhancement of 126% in electroluminescent intensity compared with a conventional LED sample, even though the MNPs are placed at least 200 nm away from the quantum-well active layer. The MNPs provide enhanced photon scattering and coupling between localized surface plasmon resonance (LSPR) modes a...

The reduction in the external quantum efficiency (EQE) droop effect of an InGaN/GaN quantum-well (QW) light-emitting diode (LED) through the mechanism of surface plasmon (SP) coupling with QW is demonstrated. With a current spreading grid pattern on the mesa surface, a smaller grid period leads to more effective carrier transport into the QW regions of Ag deposition for stronger SP–QW coupling such that the droop effect is more significantly reduced, as indicated by the increase in injection current density of maximum EQE and the decrease in drooping slope. The claim of the SP–QW coupling effect in the samples of thin p-GaN is supported by the different droop behaviors of the LED samples fabricated with another epitaxial structure of thick p-GaN, in which the SP–QW coupling effect is expected to be weak.

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

current density, gallium compounds, III-V semiconductors, indium compounds, light emitting diodes, semiconductor quantum wells, surface plasmons, wide band gap semiconductors

PACS

85.60.Jb

Light-emitting devices
73.20.Mf

Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)
78.67.De

Quantum wells

ARTICLE DATA

Digital Object Identifier

http://dx.doi.org/10.1063/1.3459151

PUBLICATION DATA

ISSN

0003-6951 (print)

1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef

American Institute of Physics

For access to citing articles, you need to log in.

Figures (5) Tables (1)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)