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Applied Physics Letters / Volume 96 / Issue 26 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 96, 261105 (2010); http://dx.doi.org/10.1063/1.3457349 (3 pages)

Enhancement of electroluminescence in GaN-based light-emitting diodes by metallic nanoparticles

Jun-Ho Sung, Jeong Su Yang, Bo-Soon Kim, Chul-Hyun Choi, Min-Woo Lee, Seung-Gol Lee, Se-Geun Park, El-Hang Lee, and Beom-Hoan O

Optics and Photonics Elite Research Academy (OPERA), INHA University, 253 Yonghyun-Dong, Nam-Gu, Inchon 402-751, Republic of Korea

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(Received 4 March 2010; accepted 2 June 2010; published online 1 July 2010)

The enhanced electroluminescence of GaN-based light-emitting diodes (LEDs) with noble metallic nanoparticles (MNPs) is demonstrated. The sample with well-designed Ag MNPs has shown the best performance enhancement of 126% in electroluminescent intensity compared with a conventional LED sample, even though the MNPs are placed at least 200 nm away from the quantum-well active layer. The MNPs provide enhanced photon scattering and coupling between localized surface plasmon resonance (LSPR) modes and photon modes internally trapped in a device. To investigate this effect, the peculiarities of the LSPR and the corresponding structural properties of the MNPs are discussed through the effective medium approach.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

electroluminescence, gallium compounds, III-V semiconductors, light emitting diodes, nanoparticles, semiconductor quantum wells, silver, surface plasmon resonance, wide band gap semiconductors

PACS

  • 85.60.Jb

    Light-emitting devices

  • 85.35.Be

    Quantum well devices (quantum dots, quantum wires, etc.)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3457349

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

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