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Applied Physics Letters / Volume 96 / Issue 26 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 96, 261106 (2010); http://dx.doi.org/10.1063/1.3459150 (3 pages)

High power single-lateral-mode operation of InAs quantum dot based ridge type laser diodes by utilizing a double bend waveguide structure

Kyoung Chan Kim1,2, Il Ki Han1, Jung Il Lee1, and Tae Geun Kim2

1Nano Device Research Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea
2School of Electrical Engineering, Korea University, Seoul 136-701, Republic of Korea

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(Received 13 November 2009; accepted 11 June 2010; published online 1 July 2010)

We report on the high-power, single-lateral-mode operation of InAs quantum dot (QD) based ridge type laser diodes (LDs) by utilizing a double bend (DB) waveguide structure. The LDs were designed so that only fundamental modes propagate and higher optical modes are suppressed through the bent regions. DB waveguide LDs allow the use of wide ridge widths for fundamental mode operations, which helps to increase their output power via the increase in their net gain. We measured continuous wave single-lateral-mode output power of up to 310 mW from InAs QD DB waveguide LDs manufactured with 10-μm-wide stripes without facet coating.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

III-V semiconductors, indium compounds, semiconductor lasers, semiconductor quantum dots, waveguide discontinuities

PACS

  • 42.55.Px

    Semiconductor lasers; laser diodes

  • 68.65.Hb

    Quantum dots (patterned in quantum wells)

  • 81.05.Ea

    III-V semiconductors

  • 84.40.Az

    Waveguides, transmission lines, striplines

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3459150

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    S. C. Auzanneau, M. Calligaro, M. Krakowski, F. Klopf, S. Deubert, J. P. Reithmaier, and A. Forchel, Appl. Phys. Lett. 84, 2238 (2004)APPLAB000084000013002238000001.

    Y. Qiu, P. Gogna, S. Forouhar, A. Stintz, and L. F. Lester, Appl. Phys. Lett. 79, 3570 (2001)APPLAB000079000022003570000001.

    G. Moreau, S. Azouigui, D. -Y. Cong, K. Merghem, A. Martinez, G. Patriarche, A. Ramdane, F. Lelarge, B. Rousseau, B. Dagens, F. Poingt, A. Accard, and F. Pommereau, Appl. Phys. Lett. 89, 241123 (2006)APPLAB000089000024241123000001.


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