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Applied Physics Letters / Volume 96 / Issue 26 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 96, 261107 (2010); http://dx.doi.org/10.1063/1.3457783 (3 pages)

Geiger-mode operation of ultraviolet avalanche photodiodes grown on sapphire and free-standing GaN substrates

E. Cicek, Z. Vashaei, R. McClintock, C. Bayram, and M. Razeghi

Department of Electrical Engineering and Computer Science, Center for Quantum Devices, Northwestern University, Evanston, Illinois 60208, USA

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(Received 18 May 2010; accepted 7 June 2010; published online 1 July 2010)

GaN avalanche photodiodes (APDs) were grown on both conventional sapphire and low dislocation density free-standing (FS) c-plane GaN substrates. Leakage current, gain, and single photon detection efficiency (SPDE) of these APDs were compared. At a reverse-bias of 70 V, APDs grown on sapphire substrates exhibited a dark current density of 2.7×10−4 A/cm2 whereas APDs grown on FS-GaN substrates had a significantly lower dark current density of 2.1×10−6 A/cm2. Under linear-mode operation, APDs grown on FS-GaN achieved avalanche gain as high as 14 000. Geiger-mode operation conditions were studied for enhanced SPDE. Under front-illumination the 625-μm2-area APD yielded a SPDE of ∼ 13% when grown on sapphire substrates compared to more than 24% when grown on FS-GaN. The SPDE of the same APD on sapphire substrate increased to ∼ 30% under back-illumination—the FS-GaN APDs were only tested under front illumination due to the thick absorbing GaN substrate.

© 2010 American Institute of Physics

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KEYWORDS and PACS

Keywords

avalanche photodiodes, dislocation density, gallium compounds, III-V semiconductors, leakage currents, sapphire, substrates, wide band gap semiconductors

PACS

  • 85.60.Dw

    Photodiodes; phototransistors; photoresistors

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3457783

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
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