APL Nameplate
  • Volume/Page
  • Keyword
  • DOI
  • Citation
  • Advanced
   
 
 
 

Flickr Twitter UniPHY Group iResearch App Facebook

Applied Physics Letters / Volume 96 / Issue 26 / LASERS, OPTICS, AND OPTOELECTRONICS

Appl. Phys. Lett. 96, 261109 (2010); http://dx.doi.org/10.1063/1.3460288 (3 pages)

Effective light trapping in polycrystalline silicon thin-film solar cells by means of rear localized surface plasmons

Zi Ouyang1, Supriya Pillai1, Fiona Beck2, Oliver Kunz1, Sergey Varlamov1, Kylie R. Catchpole2, Patrick Campbell1, and Martin A. Green1

1ARC Photovoltaics Centre of Excellence, The University of New South Wales, Sydney, New South Wales 2052, Australia
2Centre for Sustainable Energy Systems, Australian National University, Canberra, ACT 0200, Australia

View MapView Map

(Received 11 March 2010; accepted 14 June 2010; published online 1 July 2010)

Significant photocurrent enhancement has been achieved for evaporated solid-phase-crystallized polycrystalline silicon thin-film solar cells on glass, due to light trapping provided by Ag nanoparticles located on the rear silicon surface of the cells. This configuration takes advantage of the high scattering cross-section and coupling efficiency of rear-located particles formed directly on the optically dense silicon layer. We report short-circuit current enhancement of 29% due to Ag nanoparticles, increasing to 38% when combined with a detached back surface reflector. Compared to conventional light trapping schemes for these cells, this method achieves 1/3 higher short-circuit current.

© 2010 American Institute of Physics

RELATED DATABASES

To view database links for this article, you need to log in.

KEYWORDS and PACS

Keywords

silicon, solar cells, surface plasmons, thin film devices

PACS

  • 88.40.H-

    Solar cells (photovoltaics)

  • 73.20.Mf

    Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)

ARTICLE DATA

Digital Object Identifier
http://dx.doi.org/10.1063/1.3460288

PUBLICATION DATA

ISSN

0003-6951 (print)  
1077-3118 (online)

Publisher

$abstract.society.value is a Member of CrossRef American Institute of Physics

For access to fully linked references, you need to log in.
    K. R. Catchpole and A. Polman, Appl. Phys. Lett. 93, 191113 (2008)APPLAB000093000019191113000001.

    S. Pillai, K. R. Catchpole, T. Trupke, and M. A. Green, J. Appl. Phys. 101, 093105 (2007)JAPIAU000101000009093105000001.

    P. Matheu, S. H. Lim, D. Derkacs, C. McPheeters, and E. T. Yu, Appl. Phys. Lett. 93, 113108 (2008)APPLAB000093000011113108000001.

    F. J. Beck, A. Polman, and K. R. Catchpole, J. Appl. Phys. 105, 114310 (2009)JAPIAU000105000011114310000001.

    F. J. Beck, S. Mokkapati, A. Polman, and K. R. Catchpole, Appl. Phys. Lett. 96, 033113 (2010)APPLAB000096000003033113000001.

    C. Hägglund, M. Zach, G. Petersson, and B. Kasemo, Appl. Phys. Lett. 92, 053110 (2008)APPLAB000092000005053110000001.


For access to citing articles, you need to log in.


Figures (3) Tables (1)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)

Access to article objects (figures, tables, multimedia) requires a subscription; log in to view available files.
(Access to supplementary files, where available, is free for this journal.)



Close

Google Calendar

ADVERTISEMENT

Your Recent History Recent History Help

Recently Viewed

  1. Effective light trapping in polycrystalline silicon thin-film solar cells by means of rear localized surface plasmons
  2. Nanopyramid surface plasmon resonance sensors
  3. Geiger-mode operation of ultraviolet avalanche photodiodes grown on sapphire and free-standing GaN substrates
  4. High power single-lateral-mode operation of InAs quantum dot based ridge type laser diodes by utilizing a double bend waveguide structure
  5. Enhancement of electroluminescence in GaN-based light-emitting diodes by metallic nanoparticles
Go to AIP Home
Copyright © American Institute of Physics
close