Size controlled synthesis of Ge nanocrystals in SiO2 at temperatures below 400 °C using magnetron sputtering

Zhang, B.; Shrestha, S.; Green, M. A.; Conibeer, G.

doi:doi:10.1063/1.3457864

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Heating dynamics and extreme ultraviolet radiation emission of laser-produced Sn plasmas

The impact of 1.064 μm laser absorption depth on the heating and in-band (2% bandwidth) 13.5 nm extreme ultraviolet emissions in Sn plasmas is investigated experimentally and numerically. In-band emission lasting longer than the laser pulse and separation between the laser absorption and in-band emission region are observed. Maximum efficiency is achieved by additional heating of the core of the plasma to allow the optimal temperature to expand to a lower and more optically thin density. This l...

Diaspore crystal structure and compressibility at high pressures and high temperature

We have determined the unit-cell parameters of diaspore α-AlO(OH) at high pressures (13.5–27.8 GPa) and at high temperature (1900 K). Experimental data are compared with the theoretically predicted crystal structure variations derived from density functional theory (DFT) calculations. The experimental analysis establishes that the a axial direction is more compressible than the b and c axial directions in the low-pressure range (13.5–18 GPa) and at 1900 K, whereas all three directions show simi...

A simple and silicon process-compatible technique is reported for the synthesis of Ge nanocrystals (Ge-ncs) at low temperatures below 400 °C, which is much lower than the typical growth temperatures. The Ge-ncs were found to form only within a temperature window between 350 and 420 °C. The underlying mechanism has been explained by a competitive process between Volmer–Weber growth and oxidation reaction. We further implemented this technique in the fabrication of multilayered Ge-ncs which exhibited controllable crystallite size with high crystallization quality. The low temperature technique developed in this work would allow production of Ge-ncs and relative devices on low cost substrates, such as glass.

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KEYWORDS and PACS

Keywords

crystallisation, elemental semiconductors, germanium, multilayers, nanostructured materials, oxidation, silicon compounds, sputter deposition, substrates

PACS

81.07.Bc

Nanocrystalline materials
81.15.Cd

Deposition by sputtering
68.55.A-

Nucleation and growth
81.65.Mq

Oxidation
68.65.Ac

Multilayers
82.45.Yz

Nanostructured materials in electrochemistry

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http://dx.doi.org/10.1063/1.3457864

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0003-6951 (print)

1077-3118 (online)

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American Institute of Physics

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